JP2005116518A5 - - Google Patents
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- Publication number
- JP2005116518A5 JP2005116518A5 JP2004264020A JP2004264020A JP2005116518A5 JP 2005116518 A5 JP2005116518 A5 JP 2005116518A5 JP 2004264020 A JP2004264020 A JP 2004264020A JP 2004264020 A JP2004264020 A JP 2004264020A JP 2005116518 A5 JP2005116518 A5 JP 2005116518A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon oxide
- conductive layers
- hole injection
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 25
- 229910052710 silicon Inorganic materials 0.000 claims 25
- 239000010703 silicon Substances 0.000 claims 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims 25
- 238000002347 injection Methods 0.000 claims 13
- 239000007924 injection Substances 0.000 claims 13
- 150000002484 inorganic compounds Chemical class 0.000 claims 13
- 229910010272 inorganic material Inorganic materials 0.000 claims 13
- 150000002894 organic compounds Chemical class 0.000 claims 13
- 239000011159 matrix material Substances 0.000 claims 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 8
- 238000010030 laminating Methods 0.000 claims 6
- 239000011787 zinc oxide Substances 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004264020A JP4574295B2 (ja) | 2003-09-19 | 2004-09-10 | 発光装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003329201 | 2003-09-19 | ||
| JP2004264020A JP4574295B2 (ja) | 2003-09-19 | 2004-09-10 | 発光装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010086652A Division JP4906142B2 (ja) | 2003-09-19 | 2010-04-05 | 発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005116518A JP2005116518A (ja) | 2005-04-28 |
| JP2005116518A5 true JP2005116518A5 (https=) | 2006-10-12 |
| JP4574295B2 JP4574295B2 (ja) | 2010-11-04 |
Family
ID=34554686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004264020A Expired - Fee Related JP4574295B2 (ja) | 2003-09-19 | 2004-09-10 | 発光装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4574295B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4664670B2 (ja) | 2004-12-24 | 2011-04-06 | 株式会社東芝 | 半導体装置 |
| JP5210501B2 (ja) * | 2005-06-01 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7485511B2 (en) | 2005-06-01 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit device and method for manufacturing integrated circuit device |
| TWI481308B (zh) | 2007-09-27 | 2015-04-11 | Semiconductor Energy Lab | 發光元件，發光裝置，與電子設備 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307261A (ja) * | 1998-04-16 | 1999-11-05 | Tdk Corp | 有機ｅｌ素子 |
| JP2000100575A (ja) * | 1998-07-24 | 2000-04-07 | Tdk Corp | 有機ｅｌ素子 |
| JP2000108244A (ja) * | 1998-10-05 | 2000-04-18 | Asahi Glass Co Ltd | 透明導電膜とその製造方法および透明導電膜付き基体 |
| JP2000276950A (ja) * | 1999-03-19 | 2000-10-06 | Toyota Central Res & Dev Lab Inc | 透明導電薄膜 |
| JP2001176674A (ja) * | 1999-12-14 | 2001-06-29 | Tdk Corp | 有機ｅｌ素子 |
| JP2001176673A (ja) * | 1999-12-14 | 2001-06-29 | Tdk Corp | 有機ｅｌ素子 |
| JP4713010B2 (ja) * | 2000-05-08 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP2002260447A (ja) * | 2000-11-17 | 2002-09-13 | Furuya Kinzoku:Kk | 透明導電膜形成用材料とその製造方法、透明導電膜、タッチパネルとその製造方法、プラズマディスプレイとその製造方法、太陽電池とその製造方法、導電性フィルムとその製造方法、熱線反射ガラスとその製造方法、液晶表示装置とその製造方法、無機エレクトロルミネッセンス素子とその製造方法、及び、有機エレクトロルミネッセンス素子とその製造方法 |
| JP2002208479A (ja) * | 2001-01-05 | 2002-07-26 | Toppan Printing Co Ltd | 有機ｌｅｄ素子用中間抵抗膜付基板および有機ｌｅｄ素子 |
-
2004
- 2004-09-10 JP JP2004264020A patent/JP4574295B2/ja not_active Expired - Fee Related
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