JP4561089B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP4561089B2
JP4561089B2 JP2003411495A JP2003411495A JP4561089B2 JP 4561089 B2 JP4561089 B2 JP 4561089B2 JP 2003411495 A JP2003411495 A JP 2003411495A JP 2003411495 A JP2003411495 A JP 2003411495A JP 4561089 B2 JP4561089 B2 JP 4561089B2
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Japan
Prior art keywords
refresh
address
row
circuit
signal
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Expired - Fee Related
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JP2003411495A
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English (en)
Japanese (ja)
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JP2005174437A5 (enExample
JP2005174437A (ja
Inventor
敏彦 佐藤
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2003411495A priority Critical patent/JP4561089B2/ja
Publication of JP2005174437A publication Critical patent/JP2005174437A/ja
Publication of JP2005174437A5 publication Critical patent/JP2005174437A5/ja
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Publication of JP4561089B2 publication Critical patent/JP4561089B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2003411495A 2003-12-10 2003-12-10 記憶装置 Expired - Fee Related JP4561089B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003411495A JP4561089B2 (ja) 2003-12-10 2003-12-10 記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003411495A JP4561089B2 (ja) 2003-12-10 2003-12-10 記憶装置

Publications (3)

Publication Number Publication Date
JP2005174437A JP2005174437A (ja) 2005-06-30
JP2005174437A5 JP2005174437A5 (enExample) 2007-01-11
JP4561089B2 true JP4561089B2 (ja) 2010-10-13

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ID=34732211

Family Applications (1)

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JP2003411495A Expired - Fee Related JP4561089B2 (ja) 2003-12-10 2003-12-10 記憶装置

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JP (1) JP4561089B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12494243B2 (en) 2022-10-27 2025-12-09 Samsung Electronics Co., Ltd. Memory device, memory system including memory device, and method of operating memory device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035151A (ja) * 2005-07-26 2007-02-08 Elpida Memory Inc 半導体メモリ装置およびメモリシステムのリフレッシュ制御方法
JP2009043337A (ja) * 2007-08-08 2009-02-26 Hitachi Ltd 情報記録再生装置及びメモリ制御方法
KR20130129786A (ko) * 2012-05-21 2013-11-29 에스케이하이닉스 주식회사 리프래쉬 방법과 이를 이용한 반도체 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061810B2 (ja) * 1989-01-12 2000-07-10 日本電気株式会社 ダイナミツクｒａｍリフレツシユ制御方式
JPH03283086A (ja) * 1990-03-29 1991-12-13 Nec Corp ダイナミック型半導体記憶装置
JPH0757460A (ja) * 1993-08-12 1995-03-03 Sony Corp リフレッシュ制御回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12494243B2 (en) 2022-10-27 2025-12-09 Samsung Electronics Co., Ltd. Memory device, memory system including memory device, and method of operating memory device

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Publication number Publication date
JP2005174437A (ja) 2005-06-30

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