JP4559190B2 - 化合物半導体素子 - Google Patents

化合物半導体素子 Download PDF

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Publication number
JP4559190B2
JP4559190B2 JP2004317479A JP2004317479A JP4559190B2 JP 4559190 B2 JP4559190 B2 JP 4559190B2 JP 2004317479 A JP2004317479 A JP 2004317479A JP 2004317479 A JP2004317479 A JP 2004317479A JP 4559190 B2 JP4559190 B2 JP 4559190B2
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JP
Japan
Prior art keywords
group iii
compound semiconductor
semiconductor layer
layer
iii nitride
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Expired - Fee Related
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JP2004317479A
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English (en)
Japanese (ja)
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JP2005159339A (ja
JP2005159339A5 (enExample
Inventor
隆 宇田川
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Resonac Holdings Corp
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Showa Denko KK
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Publication of JP2005159339A5 publication Critical patent/JP2005159339A5/ja
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JP2004317479A 2003-11-06 2004-11-01 化合物半導体素子 Expired - Fee Related JP4559190B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004317479A JP4559190B2 (ja) 2003-11-06 2004-11-01 化合物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003376618 2003-11-06
JP2004317479A JP4559190B2 (ja) 2003-11-06 2004-11-01 化合物半導体素子

Publications (3)

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JP2005159339A JP2005159339A (ja) 2005-06-16
JP2005159339A5 JP2005159339A5 (enExample) 2007-12-13
JP4559190B2 true JP4559190B2 (ja) 2010-10-06

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JP2004317479A Expired - Fee Related JP4559190B2 (ja) 2003-11-06 2004-11-01 化合物半導体素子

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JP (1) JP4559190B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101146819B1 (ko) 2008-09-23 2012-05-21 일진머티리얼즈 주식회사 단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법
JP4786730B2 (ja) * 2009-05-28 2011-10-05 シャープ株式会社 電界効果型トランジスタおよびその製造方法
KR101202838B1 (ko) 2010-06-16 2012-11-20 전북대학교산학협력단 결정결함 내에 스피어를 포함하는 발광소자 및 그 제조방법
DE102014115599A1 (de) * 2013-10-28 2015-04-30 Seoul Viosys Co., Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3591710B2 (ja) * 1999-12-08 2004-11-24 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP3592616B2 (ja) * 2000-06-22 2004-11-24 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
JP4644942B2 (ja) * 2001-01-18 2011-03-09 ソニー株式会社 結晶膜、結晶基板および半導体装置の製造方法
JP3832313B2 (ja) * 2001-11-02 2006-10-11 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体

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JP2005159339A (ja) 2005-06-16

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