JP4547337B2 - 薄膜形成装置 - Google Patents
薄膜形成装置 Download PDFInfo
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- JP4547337B2 JP4547337B2 JP2005517827A JP2005517827A JP4547337B2 JP 4547337 B2 JP4547337 B2 JP 4547337B2 JP 2005517827 A JP2005517827 A JP 2005517827A JP 2005517827 A JP2005517827 A JP 2005517827A JP 4547337 B2 JP4547337 B2 JP 4547337B2
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- substrate
- film forming
- fixing
- substrate holder
- thin film
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- 239000010409 thin film Substances 0.000 title claims description 45
- 239000000758 substrate Substances 0.000 claims description 364
- 239000010408 film Substances 0.000 claims description 93
- 230000002093 peripheral effect Effects 0.000 claims description 59
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 238000012546 transfer Methods 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 230000005291 magnetic effect Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/568—Transferring the substrates through a series of coating stations
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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Description
〈実施形態1〉
図1は、本発明の実施形態1に係る薄膜形成装置を示す一部破断斜視図であり、本実施形態の薄膜形成装置は、多角形のドラム型基板ホルダーの各外周面に保持した基板に繰り返し成膜を行うカルーセル型スパッタ装置である。
〈実施形態2〉
本実施形態における固定装置は、図11に示すように、ドラム型基板ホルダー(不図示)の各外周面の角部の上方に固定された下側固定部材30の上面に、付勢手段を有している回転軸31を回転中心にして開閉自在な上側固定部材32を取り付け、ドラム型基板ホルダーの各外周面の角部内に設けたシリンダー駆動装置33の伸縮自在なシリンダー34の先端を上側固定部材32に揺動自在に連結して構成されている。
〈実施形態3〉
本実施形態における固定装置は、図12に示すように、ドラム型基板ホルダー(不図示)の各外周面の角部の上方に固定された下側固定部材35の上方に上側固定部材36を設置し、ドラム型基板ホルダーの各外周面の角部内に設けたシリンダー駆動装置33に設けた伸縮自在なシリンダー34の先端を上側固定部材36に連結して構成されている。
〈実施形態4〉
本実施形態における固定装置は、図13に示すように、ドラム型基板ホルダー(不図示)の各外周面の角部の上方に固定された上側固定部材36の下面に下側固定部材37を取り付け、成膜室2の上面側に伸縮自在なシリンダー34を有するシリンダー駆動装置33を設けている。
〈実施形態5〉
本実施形態における固定装置は、図14に示すように、ドラム型基板ホルダー(不図示)の各外周面の角部の上方に固定された下側固定部材61内に電磁石62を埋め込み、下側固定部材61上に載置される基板固定治具13の縁部13bの下面に磁性板63を固着して構成されている。電磁石62は、外部からの電気信号のON/OFFによって、発生される磁力の有効/無効が切り換えられる。
〈実施形態6〉
本実施形態は、本発明に係る薄膜形成装置をマルチチャンバ(多室)型枚葉式スパッタ成膜装置に適用した場合であり、図15に示すように、中央部に設けた搬送室3の周囲に仕込取出し室4、予備加熱室43、成膜室2、基板冷却室44がそれぞれゲートバルブ45a、45b、45c、45dを介して設置されている。予備加熱室43は、成膜前の基板の予備加熱を行い、基板冷却室44は、スパッタ成膜後の基板を冷却する。搬送室3、仕込取出し室4、成膜室2の構成は、図1〜図5に示した実施形態1と同様であり、本実施形態ではそれらの説明は省略する。なお、成膜室2を複数設置することもできる。
〈実施形態7〉
図16は、本実施形態に係る薄膜形成装置を示す概略断面図であり、搬送室3の両側にそれぞれゲートバルブ46a、46bを介して仕込取出し室4と成膜室2が連結されている。
2 成膜室(真空容器)
3 搬送室
4 仕込取出し室
5 ドラム型基板ホルダー(基板ホルダー)
6 回転軸
12 基板
13 基板固定治具
14 固定装置(固定手段)
16、32、36 上側固定部材
17、30、35、37、61 下側固定部材
19、33 シリンダー駆動装置
21 押え軸
24 アーム(搬入・搬出手段)
70 ガイド機構
71、75 ガイドレール
72、73 凸部
77 ガイド部
Claims (9)
- 真空排気可能な容器内で、回転軸に対し回転自在な筒状の基板ホルダーの外周面上に、複数の基板を保持し、前記基板ホルダーを回転させながら、成膜手段により前記各基板上に薄膜を成膜する薄膜形成装置であって、
前記基板ホルダーの外周面に脱着可能に固定される、単数の基板及び複数の基板のいずれかを固定保持する基板固定治具及び基板自体のいずれかを、前記容器内の前記基板ホルダーに対して搬入及び搬出の両方を行う搬入・搬出手段と、
前記基板ホルダーの外周面に、前記搬入・搬出手段で搬入される前記基板固定治具及び基板自体のいずれかを固定解除自在に固定する固定手段と、
を備え、
前記基板ホルダーが、水平な回転軸を回転中心にして設置され、
前記搬入・搬出手段が前記容器の外に設置され、前記基板固定治具及び前記基板自体のいずれかを前記回転軸と平行な方向に前記基板ホルダーの外周面に沿って搬入し、
前記固定手段は、前記搬入・搬出手段で搬入された前記基板固定治具及び前記基板自体のいずれかを直接固定する薄膜形成装置。 - 前記搬入・搬出手段による搬入・搬出動作及び前記固定手段による固定動作のいずれもが、減圧環境下で行われることを特徴とする請求項1記載の薄膜形成装置。
- 前記固定手段の固定解除が、電気信号による制御によって行われることを特徴とする請求項1記載の薄膜形成装置。
- 前記固定手段が、前記基板固定治具及び基板自体のいずれかを付勢手段により押さえて保持する機構と、前記真空排気可能な容器の外側に設けられた駆動装置及び前記基板ホルダー内部に設けられた駆動装置のいずれかにより前記付勢手段を縮めて前記基板固定治具及び基板自体のいずれかの保持を解除する機構を有することを特徴とする請求項1記載の薄膜形成装置。
- 前記固定手段が、前記基板固定治具を磁力により固定することを特徴とする請求項1記載の薄膜形成装置。
- 前記搬入・搬出手段が、前記真空排気可能な容器とバルブを介して設置された搬送室に設置されており、前記搬送室が真空排気可能であることを特徴とする請求項1記載の薄膜形成装置。
- 前記搬送室にバルブを介して接続される仕込取出し室を有し、前記仕込取出し室が真空排気可能であることを特徴とする請求項6記載の薄膜形成装置。
- 前記成膜手段が、スパッタ手段、蒸着手段及びCVD手段のいずれか、或いはこれらの組み合わせた構成を有していることを特徴とする請求項1記載の薄膜形成装置。
- 前記成膜手段で形成された薄膜に、反応ガスを接触させる反応ガス供給手段、プラズマを照射するプラズマ照射手段、イオンを照射するイオン照射手段及び薄膜の一部をエッチングするエッチング手段のいずれか、或いはこれらの組み合わせを適用可能にしたことを特徴とする請求項1記載の薄膜形成装置。
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JP2022504743A (ja) * | 2018-10-10 | 2022-01-13 | エヴァテック・アーゲー | 真空処理装置、及び基板を真空処理するための方法 |
JP7213787B2 (ja) * | 2018-12-18 | 2023-01-27 | 芝浦メカトロニクス株式会社 | 成膜装置 |
KR102179671B1 (ko) * | 2019-03-22 | 2020-11-17 | 주식회사 테토스 | 냉각 효율이 향상된 기판 장착 드럼을 구비하는 기판 측면부 증착 장치 |
JP7471074B2 (ja) * | 2019-12-02 | 2024-04-19 | キヤノントッキ株式会社 | 成膜方法及び成膜装置 |
KR102318364B1 (ko) * | 2020-07-30 | 2021-10-26 | 신크론 컴퍼니 리미티드 | 이재 장치 및 이것을 사용한 성막 장치 |
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