JP4541762B2 - 陰極スパッタ法 - Google Patents
陰極スパッタ法 Download PDFInfo
- Publication number
- JP4541762B2 JP4541762B2 JP2004160072A JP2004160072A JP4541762B2 JP 4541762 B2 JP4541762 B2 JP 4541762B2 JP 2004160072 A JP2004160072 A JP 2004160072A JP 2004160072 A JP2004160072 A JP 2004160072A JP 4541762 B2 JP4541762 B2 JP 4541762B2
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- JP
- Japan
- Prior art keywords
- layer
- gas mixture
- reactive
- sputtering method
- reactive gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
Description
1つには、流量調節装置と高速調節バルブとのタンデム接続によりデッドスペースが生じ、このデッドスペースはガス混合容器、流量調節装置の出口側および調節バルブの入口側の合計である。
図2は本発明方法を実施するために使用される、反応性ガス混合物を製造するための装置を示す。
Claims (9)
- 少なくとも部分的に、少なくとも2種の化学的化合物からなり、これらの化合物の割合が成長方向において変化する薄層を析出するための真空室中での陰極スパッタ法であり、この際これらの化合物はそれぞれが同じ1種のターゲット材料または同じ複数種のターゲット材料の反応性スパッタにより、反応性ガス混合物の異なる成分の少なくとも部分的な組込下に形成され、層を形成する反応性ガス成分の反応性ガスの含量が設定可能な時間的指示に従う、陰極スパッタ法において、
− 反応性ガス混合物の少なくとも2種の成分を異なるガス貯蔵容器から供給し、
− これらのガス貯蔵容器から流出するガス流を個々に質量−または体積流量調節器により調節し、
− 調節したガス流を少なくとも1つの分離した混合ガス容器中で一緒にして反応性ガス混合物にし、
− 導入した反応性ガス混合物の少なくとも10%の割合を、真空室中に達することなく、ポンプにより吸引し、かつ
− 反応性スパッタ工程が"遷移モード"で安定するように、反応性ガス混合物を混合ガス容器から調節バルブを用いて最高で50ミリ秒の時間定数で真空室中に導入することを特徴とする、陰極スパッタ法。 - 付加的に、混合ガス容器中の圧力を設定値に調節する、請求項1記載の陰極スパッタ法。
- ドーピング剤として薄層中に組込可能である、その他のガス状または蒸気状の層形成性成分を少なくとも1つのガス流と一緒に導入し、調節する、請求項1または2記載の陰極スパッタ法。
- 導入する反応性ガス混合物の少なくとも50%の割合を、真空室中に達することなく、ポンプにより吸引する、請求項1から3までのいずれか1項記載の陰極スパッタ法。
- 少なくとも1つのケイ素ターゲットをスパッタし、酸素および窒素を含有する反応性ガス混合物を使用する、請求項1から4までのいずれか1項記載の陰極スパッタ法。
- 混合ガス容器中への少なくとも1つのガス流を所定の目標値に依存して調節する、請求項1から7までのいずれか1項記載の陰極スパッタ法。
- 波形−フィルター、二色性フィルター、エッジフィルター、バンドパスフィルター、ハイパスフィルター、ローパスフィルター、反射防止被覆並びに波長分割多重化−フィルターの製造のための、請求項1から8までのいずれか1項記載の方法の使用。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10324556.1A DE10324556B4 (de) | 2003-05-30 | 2003-05-30 | Katodenzerstäubungsverfahren sowie Verwendung des Verfahrens |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004360073A JP2004360073A (ja) | 2004-12-24 |
JP4541762B2 true JP4541762B2 (ja) | 2010-09-08 |
Family
ID=33441493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004160072A Expired - Fee Related JP4541762B2 (ja) | 2003-05-30 | 2004-05-28 | 陰極スパッタ法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4541762B2 (ja) |
DE (1) | DE10324556B4 (ja) |
TW (1) | TW200506081A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8936702B2 (en) * | 2006-03-07 | 2015-01-20 | Micron Technology, Inc. | System and method for sputtering a tensile silicon nitride film |
ITRM20110308A1 (it) * | 2011-06-15 | 2012-12-16 | Gia E Lo Sviluppo Economico Sostenibile Enea | Assorbitore solare selettivo a base di materiali cermet del tipo doppio nitruro, e relativo procedimento di fabbricazione |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673528A (ja) * | 1990-12-28 | 1994-03-15 | Mitsubishi Materials Corp | 金属物品の着色装置および着色方法 |
JPH09271652A (ja) * | 1996-04-03 | 1997-10-21 | Nippon Sanso Kk | 混合ガス供給装置 |
JPH10212578A (ja) * | 1997-01-31 | 1998-08-11 | Sony Corp | 成膜装置 |
JP2001192821A (ja) * | 2000-01-07 | 2001-07-17 | Nippon Sheet Glass Co Ltd | 被膜を基体に被覆する方法およびその方法を用いた物品 |
JP2003093896A (ja) * | 2001-07-19 | 2003-04-02 | Toto Ltd | 光触媒性酸化チタン膜の成膜方法 |
-
2003
- 2003-05-30 DE DE10324556.1A patent/DE10324556B4/de not_active Expired - Lifetime
-
2004
- 2004-04-27 TW TW093111666A patent/TW200506081A/zh not_active IP Right Cessation
- 2004-05-28 JP JP2004160072A patent/JP4541762B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673528A (ja) * | 1990-12-28 | 1994-03-15 | Mitsubishi Materials Corp | 金属物品の着色装置および着色方法 |
JPH09271652A (ja) * | 1996-04-03 | 1997-10-21 | Nippon Sanso Kk | 混合ガス供給装置 |
JPH10212578A (ja) * | 1997-01-31 | 1998-08-11 | Sony Corp | 成膜装置 |
JP2001192821A (ja) * | 2000-01-07 | 2001-07-17 | Nippon Sheet Glass Co Ltd | 被膜を基体に被覆する方法およびその方法を用いた物品 |
JP2003093896A (ja) * | 2001-07-19 | 2003-04-02 | Toto Ltd | 光触媒性酸化チタン膜の成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
DE10324556A1 (de) | 2004-12-16 |
JP2004360073A (ja) | 2004-12-24 |
TW200506081A (en) | 2005-02-16 |
TWI350315B (ja) | 2011-10-11 |
DE10324556B4 (de) | 2015-02-05 |
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