TWI350315B - - Google Patents

Info

Publication number
TWI350315B
TWI350315B TW093111666A TW93111666A TWI350315B TW I350315 B TWI350315 B TW I350315B TW 093111666 A TW093111666 A TW 093111666A TW 93111666 A TW93111666 A TW 93111666A TW I350315 B TWI350315 B TW I350315B
Authority
TW
Taiwan
Application number
TW093111666A
Other languages
Chinese (zh)
Other versions
TW200506081A (en
Inventor
Bartzsch Hagen
Gottfried Christian
Frach Peter
Goedicke Klaus
Lange Stephan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200506081A publication Critical patent/TW200506081A/zh
Application granted granted Critical
Publication of TWI350315B publication Critical patent/TWI350315B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0094—Reactive sputtering in transition mode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
TW093111666A 2003-05-30 2004-04-27 Cathode sputtering method TW200506081A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10324556.1A DE10324556B4 (de) 2003-05-30 2003-05-30 Katodenzerstäubungsverfahren sowie Verwendung des Verfahrens

Publications (2)

Publication Number Publication Date
TW200506081A TW200506081A (en) 2005-02-16
TWI350315B true TWI350315B (ja) 2011-10-11

Family

ID=33441493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111666A TW200506081A (en) 2003-05-30 2004-04-27 Cathode sputtering method

Country Status (3)

Country Link
JP (1) JP4541762B2 (ja)
DE (1) DE10324556B4 (ja)
TW (1) TW200506081A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8936702B2 (en) * 2006-03-07 2015-01-20 Micron Technology, Inc. System and method for sputtering a tensile silicon nitride film
ITRM20110308A1 (it) * 2011-06-15 2012-12-16 Gia E Lo Sviluppo Economico Sostenibile Enea Assorbitore solare selettivo a base di materiali cermet del tipo doppio nitruro, e relativo procedimento di fabbricazione

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673528A (ja) * 1990-12-28 1994-03-15 Mitsubishi Materials Corp 金属物品の着色装置および着色方法
JPH09271652A (ja) * 1996-04-03 1997-10-21 Nippon Sanso Kk 混合ガス供給装置
JPH10212578A (ja) * 1997-01-31 1998-08-11 Sony Corp 成膜装置
JP2001192821A (ja) * 2000-01-07 2001-07-17 Nippon Sheet Glass Co Ltd 被膜を基体に被覆する方法およびその方法を用いた物品
JP2003093896A (ja) * 2001-07-19 2003-04-02 Toto Ltd 光触媒性酸化チタン膜の成膜方法

Also Published As

Publication number Publication date
TW200506081A (en) 2005-02-16
JP2004360073A (ja) 2004-12-24
JP4541762B2 (ja) 2010-09-08
DE10324556B4 (de) 2015-02-05
DE10324556A1 (de) 2004-12-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees