JP4533155B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4533155B2
JP4533155B2 JP2005005506A JP2005005506A JP4533155B2 JP 4533155 B2 JP4533155 B2 JP 4533155B2 JP 2005005506 A JP2005005506 A JP 2005005506A JP 2005005506 A JP2005005506 A JP 2005005506A JP 4533155 B2 JP4533155 B2 JP 4533155B2
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metal material
layer
element isolation
insulating film
conductive layer
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Japanese (ja)
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JP2006196610A5 (enExample
JP2006196610A (ja
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石琴 肖
和人 池田
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2005005506A 2005-01-12 2005-01-12 半導体装置及びその製造方法 Expired - Fee Related JP4533155B2 (ja)

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JP2005005506A JP4533155B2 (ja) 2005-01-12 2005-01-12 半導体装置及びその製造方法

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JP2005005506A JP4533155B2 (ja) 2005-01-12 2005-01-12 半導体装置及びその製造方法

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JP2006196610A JP2006196610A (ja) 2006-07-27
JP2006196610A5 JP2006196610A5 (enExample) 2008-02-21
JP4533155B2 true JP4533155B2 (ja) 2010-09-01

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324342A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置およびその製造方法
US7675097B2 (en) * 2006-12-01 2010-03-09 International Business Machines Corporation Silicide strapping in imager transfer gate device
KR100817719B1 (ko) 2006-12-27 2008-03-27 동부일렉트로닉스 주식회사 Ｃｍｏｓ 트랜지스터용 폴리실리콘 구조물 및 이의 제조방법
JP5414053B2 (ja) * 2007-12-07 2014-02-12 独立行政法人物質・材料研究機構 金属電極及びこれを用いた半導体素子
JP2009176997A (ja) * 2008-01-25 2009-08-06 Panasonic Corp 半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217313A (ja) * 2000-11-30 2002-08-02 Texas Instruments Inc 金属及び対応する金属珪化物から形成した各ゲートを有する相補形トランジスタ
JP2004228547A (ja) * 2002-11-29 2004-08-12 Sony Corp 半導体装置およびその製造方法
EP1593155A1 (en) * 2003-02-03 2005-11-09 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method
US7316950B2 (en) * 2003-04-22 2008-01-08 National University Of Singapore Method of fabricating a CMOS device with dual metal gate electrodes
JP2008510296A (ja) * 2004-08-13 2008-04-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ デュアル・ゲートｃｍｏｓの製造

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