JP4529414B2 - 電気光学装置用基板の製造方法 - Google Patents

電気光学装置用基板の製造方法 Download PDF

Info

Publication number
JP4529414B2
JP4529414B2 JP2003369051A JP2003369051A JP4529414B2 JP 4529414 B2 JP4529414 B2 JP 4529414B2 JP 2003369051 A JP2003369051 A JP 2003369051A JP 2003369051 A JP2003369051 A JP 2003369051A JP 4529414 B2 JP4529414 B2 JP 4529414B2
Authority
JP
Japan
Prior art keywords
film
substrate
amorphous carbon
electro
carbon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003369051A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005134542A5 (https=
JP2005134542A (ja
Inventor
幸男 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2003369051A priority Critical patent/JP4529414B2/ja
Publication of JP2005134542A publication Critical patent/JP2005134542A/ja
Publication of JP2005134542A5 publication Critical patent/JP2005134542A5/ja
Application granted granted Critical
Publication of JP4529414B2 publication Critical patent/JP4529414B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
JP2003369051A 2003-10-29 2003-10-29 電気光学装置用基板の製造方法 Expired - Fee Related JP4529414B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003369051A JP4529414B2 (ja) 2003-10-29 2003-10-29 電気光学装置用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003369051A JP4529414B2 (ja) 2003-10-29 2003-10-29 電気光学装置用基板の製造方法

Publications (3)

Publication Number Publication Date
JP2005134542A JP2005134542A (ja) 2005-05-26
JP2005134542A5 JP2005134542A5 (https=) 2006-06-01
JP4529414B2 true JP4529414B2 (ja) 2010-08-25

Family

ID=34646537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003369051A Expired - Fee Related JP4529414B2 (ja) 2003-10-29 2003-10-29 電気光学装置用基板の製造方法

Country Status (1)

Country Link
JP (1) JP4529414B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020101616A (ja) * 2018-12-20 2020-07-02 日本電気硝子株式会社 電子デバイスの製造方法及びガラス基板

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283166A (ja) * 1987-05-15 1988-11-21 Oki Electric Ind Co Ltd ゲ−ト電極構造
JP2596927Y2 (ja) * 1990-11-22 1999-06-28 株式会社半導体エネルギー研究所 電子装置
CN1316556C (zh) * 1996-01-30 2007-05-16 精工爱普生株式会社 高能体供给装置、结晶性膜的形成方法和薄膜电子装置的制造方法
JP2607838Y2 (ja) * 1997-12-22 2003-03-31 株式会社半導体エネルギー研究所 電子装置および液晶表示装置
JPH11307782A (ja) * 1998-04-24 1999-11-05 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP5046439B2 (ja) * 2000-05-12 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002016276A (ja) * 2000-06-30 2002-01-18 Sony Corp 電子装置
JP4869471B2 (ja) * 2000-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4754677B2 (ja) * 2000-07-31 2011-08-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002093586A (ja) * 2000-09-19 2002-03-29 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP2002076352A (ja) * 2000-08-31 2002-03-15 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2002287661A (ja) * 2001-03-27 2002-10-04 Seiko Instruments Inc 高分子樹脂基板、それを用いた液晶素子及びエレクトロルミネッセンス素子
JP2003229578A (ja) * 2001-06-01 2003-08-15 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置およびその作製方法
JP2003115456A (ja) * 2001-10-05 2003-04-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4060113B2 (ja) * 2002-04-05 2008-03-12 株式会社半導体エネルギー研究所 発光装置

Also Published As

Publication number Publication date
JP2005134542A (ja) 2005-05-26

Similar Documents

Publication Publication Date Title
US20030207545A1 (en) SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
KR200336100Y1 (ko) 전기 광학 장치 및 전자 기기
US7449761B2 (en) Electro-optical device, method for manufacturing electro-optical device, and electronic apparatus
JP3736513B2 (ja) 電気光学装置及びその製造方法並びに電子機器
US8698967B2 (en) Electro-optic device, electronic device, and method of manufacturing electro-optic device
JP3778195B2 (ja) 平坦化層を有する基板及びその製造方法並びに電気光学装置用基板及び電気光学装置及び電子機器
US7764325B2 (en) Electro-optical device, method of producing the same, and electronic apparatus
US10656455B2 (en) Electro-optical device, transmissive liquid crystal display device, and electronic device
JP2000056319A (ja) 電気光学装置及びその製造方法並びに電子機器
JP6263944B2 (ja) 液晶装置、液晶装置の製造方法、及び電子機器
US11387258B2 (en) Substrate for electro-optical device, electro-optical device, and electronic apparatus
JP4529414B2 (ja) 電気光学装置用基板の製造方法
US20130300993A1 (en) Liquid crystal device and electronic apparatus
US10564497B2 (en) Electro-optical device and electronic apparatus
JP2007256924A (ja) 液晶装置、液晶装置の製造方法、及び電子機器
JP2012123144A (ja) 液晶装置、液晶装置の製造方法、電子機器
JP4000827B2 (ja) 電気光学装置及びその製造方法、並びに電子機器
JP2003140127A (ja) 電気光学装置及びその製造方法並びに電子機器
JP2003167255A (ja) 液晶装置、液晶装置用基板の製造方法、及び電子機器
JP2005285975A (ja) 半導体装置及びその製造方法、電気光学装置並びに電子機器
KR20070069054A (ko) 전기 광학 장치, 그 제조 방법, 및 전자기기
JP4269658B2 (ja) 電気光学装置及びその製造方法並びに電子機器
JP4251045B2 (ja) 薄膜トランジスタの製造方法及び電気光学装置の製造方法
JP4462128B2 (ja) 電気光学装置及びその製造方法並びに電子機器
JP4147996B2 (ja) 電気光学装置及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060410

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060410

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20070403

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090928

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100518

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100531

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130618

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees