JP4527068B2 - 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 - Google Patents

剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 Download PDF

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JP4527068B2
JP4527068B2 JP2006037358A JP2006037358A JP4527068B2 JP 4527068 B2 JP4527068 B2 JP 4527068B2 JP 2006037358 A JP2006037358 A JP 2006037358A JP 2006037358 A JP2006037358 A JP 2006037358A JP 4527068 B2 JP4527068 B2 JP 4527068B2
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layer
substrate
film
oxide
nitride
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Japanese (ja)
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JP2006203220A (ja
JP2006203220A5 (enExample
Inventor
徹 高山
純矢 丸山
真由美 水上
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2006203220A5 publication Critical patent/JP2006203220A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006037358A 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 Expired - Fee Related JP4527068B2 (ja)

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JP2006037358A JP4527068B2 (ja) 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法

Applications Claiming Priority (3)

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JP2001216018 2001-07-16
JP2001299620 2001-09-28
JP2006037358A JP4527068B2 (ja) 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法

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JP2002207536A Division JP4027740B2 (ja) 2001-07-16 2002-07-16 半導体装置の作製方法

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JP2006203220A JP2006203220A (ja) 2006-08-03
JP2006203220A5 JP2006203220A5 (enExample) 2010-02-04
JP4527068B2 true JP4527068B2 (ja) 2010-08-18

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611565B (zh) 2006-09-29 2018-01-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR20090017014A (ko) 2007-08-13 2009-02-18 삼성전자주식회사 가요성 표시 장치의 제조 방법
JP5368013B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5368014B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5131128B2 (ja) * 2008-09-30 2013-01-30 大日本印刷株式会社 可撓性基板、可撓性基板の製造方法、及び製品
KR101149433B1 (ko) * 2009-08-28 2012-05-22 삼성모바일디스플레이주식회사 플렉서블 표시 장치 및 그 제조 방법
US9093397B2 (en) 2011-07-06 2015-07-28 Panasonic Corporation Flexible device manufacturing method and flexible device
CN105965990B (zh) * 2012-05-29 2018-06-01 旭硝子株式会社 玻璃层叠体和电子器件的制造方法
CN104451612A (zh) * 2014-12-31 2015-03-25 长春迪高实业有限公司 透明导电氧化物膜及其制备方法
JP6899477B2 (ja) * 2019-07-26 2021-07-07 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板
WO2024236905A1 (ja) * 2023-05-15 2024-11-21 株式会社ジャパンディスプレイ 電波反射板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142570A (ja) * 1993-11-12 1995-06-02 Ube Ind Ltd 複合半導体基板及びその製造方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
WO1998021750A1 (fr) * 1996-11-11 1998-05-22 Catalysts & Chemicals Industries Co., Ltd. Procede d'aplanissement d'un substrat, et procede de fabrication de substrats recouverts d'un film et de dispositifs a semi-conducteur
JPH1187799A (ja) * 1997-09-12 1999-03-30 Matsushita Electric Ind Co Ltd 磁気抵抗素子とその製造方法
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子
JP4009923B2 (ja) * 1999-09-30 2007-11-21 セイコーエプソン株式会社 Ｅｌパネル
JP2001166301A (ja) * 1999-12-06 2001-06-22 Seiko Epson Corp バックライト内蔵型液晶表示装置及びその製造方法
JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法

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