JP4505357B2 - 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 - Google Patents

感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 Download PDF

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Publication number
JP4505357B2
JP4505357B2 JP2005075494A JP2005075494A JP4505357B2 JP 4505357 B2 JP4505357 B2 JP 4505357B2 JP 2005075494 A JP2005075494 A JP 2005075494A JP 2005075494 A JP2005075494 A JP 2005075494A JP 4505357 B2 JP4505357 B2 JP 4505357B2
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JP
Japan
Prior art keywords
group
acid
photosensitive composition
resin
examples
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Expired - Fee Related
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JP2005075494A
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Japanese (ja)
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JP2006259136A (ja
Inventor
一良 水谷
安大 川西
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2005075494A priority Critical patent/JP4505357B2/ja
Priority to US11/373,188 priority patent/US7807329B2/en
Priority to AT06005324T priority patent/ATE460685T1/de
Priority to DE602006012749T priority patent/DE602006012749D1/de
Priority to EP06005324A priority patent/EP1703326B1/en
Publication of JP2006259136A publication Critical patent/JP2006259136A/ja
Application granted granted Critical
Publication of JP4505357B2 publication Critical patent/JP4505357B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring
JP2005075494A 2005-03-16 2005-03-16 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 Expired - Fee Related JP4505357B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005075494A JP4505357B2 (ja) 2005-03-16 2005-03-16 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US11/373,188 US7807329B2 (en) 2005-03-16 2006-03-13 Photosensitive composition and pattern-forming method using the same
AT06005324T ATE460685T1 (de) 2005-03-16 2006-03-15 Lichtempfindliche zusammensetzung und verfahren zur strukturformung damit
DE602006012749T DE602006012749D1 (de) 2005-03-16 2006-03-15 Lichtempfindliche Zusammensetzung und Verfahren zur Strukturformung damit
EP06005324A EP1703326B1 (en) 2005-03-16 2006-03-15 Photosensitive composition and pattern-forming method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005075494A JP4505357B2 (ja) 2005-03-16 2005-03-16 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Publications (2)

Publication Number Publication Date
JP2006259136A JP2006259136A (ja) 2006-09-28
JP4505357B2 true JP4505357B2 (ja) 2010-07-21

Family

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Family Applications (1)

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JP2005075494A Expired - Fee Related JP4505357B2 (ja) 2005-03-16 2005-03-16 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Country Status (5)

Country Link
US (1) US7807329B2 (US07807329-20101005-C00098.png)
EP (1) EP1703326B1 (US07807329-20101005-C00098.png)
JP (1) JP4505357B2 (US07807329-20101005-C00098.png)
AT (1) ATE460685T1 (US07807329-20101005-C00098.png)
DE (1) DE602006012749D1 (US07807329-20101005-C00098.png)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2008100988A (ja) * 2006-09-19 2008-05-01 Fujifilm Corp 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

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JP4499591B2 (ja) * 2005-03-23 2010-07-07 東京応化工業株式会社 厚膜形成用化学増幅型ポジ型ホトレジスト組成物
JP4524234B2 (ja) * 2005-09-26 2010-08-11 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
KR20080026066A (ko) * 2006-09-19 2008-03-24 후지필름 가부시키가이샤 감광성 조성물, 감광성 조성물에 사용하는 화합물 및감광성 조성물을 사용한 패턴형성방법
KR101384171B1 (ko) * 2006-09-29 2014-04-10 후지필름 가부시키가이샤 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP2008191644A (ja) * 2006-10-30 2008-08-21 Rohm & Haas Electronic Materials Llc 液浸リソグラフィーのための組成物および方法
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
JP5096796B2 (ja) * 2007-03-05 2012-12-12 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
EP1978408B1 (en) 2007-03-29 2011-10-12 FUJIFILM Corporation Negative resist composition and pattern forming method using the same
JP4958821B2 (ja) * 2007-03-29 2012-06-20 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4982288B2 (ja) * 2007-04-13 2012-07-25 富士フイルム株式会社 パターン形成方法
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
JP4866790B2 (ja) * 2007-05-23 2012-02-01 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5066405B2 (ja) * 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
JP2009053665A (ja) * 2007-08-02 2009-03-12 Fujifilm Corp 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP5459998B2 (ja) 2007-09-14 2014-04-02 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂
JP5276821B2 (ja) * 2007-10-01 2013-08-28 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
JP5358112B2 (ja) * 2008-03-28 2013-12-04 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5364436B2 (ja) * 2008-05-08 2013-12-11 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物、および酸発生剤
JP5238354B2 (ja) * 2008-05-21 2013-07-17 東京応化工業株式会社 レジストパターン形成方法
JP5481046B2 (ja) * 2008-08-13 2014-04-23 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
JP5387181B2 (ja) * 2009-07-08 2014-01-15 信越化学工業株式会社 スルホニウム塩、レジスト材料及びパターン形成方法
JPWO2012014576A1 (ja) * 2010-07-30 2013-09-12 Jsr株式会社 ネガ型感放射線性樹脂組成物
KR101229312B1 (ko) 2011-01-03 2013-02-04 금호석유화학 주식회사 술포늄 화합물, 광산발생제 및 이의 제조방법
JP5035466B1 (ja) 2011-02-04 2012-09-26 Ｊｓｒ株式会社 レジストパターン形成用感放射線性樹脂組成物
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JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
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Also Published As

Publication number Publication date
EP1703326B1 (en) 2010-03-10
ATE460685T1 (de) 2010-03-15
EP1703326A2 (en) 2006-09-20
DE602006012749D1 (de) 2010-04-22
JP2006259136A (ja) 2006-09-28
EP1703326A3 (en) 2007-11-07
US20060210919A1 (en) 2006-09-21
US7807329B2 (en) 2010-10-05

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