JP4501225B2 - 発光素子および発光素子の製造方法 - Google Patents

発光素子および発光素子の製造方法 Download PDF

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Publication number
JP4501225B2
JP4501225B2 JP2000153499A JP2000153499A JP4501225B2 JP 4501225 B2 JP4501225 B2 JP 4501225B2 JP 2000153499 A JP2000153499 A JP 2000153499A JP 2000153499 A JP2000153499 A JP 2000153499A JP 4501225 B2 JP4501225 B2 JP 4501225B2
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layer
electrode
semiconductor layer
nitride semiconductor
light emitting
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Japanese (ja)
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JP2001313422A5 (enExample
JP2001313422A (ja
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達憲 豊田
博文 庄野
和浩 永峰
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Nichia Corp
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Nichia Corp
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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000153499A 2000-02-21 2000-05-24 発光素子および発光素子の製造方法 Expired - Fee Related JP4501225B2 (ja)

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JP2000153499A JP4501225B2 (ja) 2000-02-21 2000-05-24 発光素子および発光素子の製造方法

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JP2000-48878 2000-02-21
JP2000048878 2000-02-21
JP2000153499A JP4501225B2 (ja) 2000-02-21 2000-05-24 発光素子および発光素子の製造方法

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JP2001313422A JP2001313422A (ja) 2001-11-09
JP2001313422A5 JP2001313422A5 (enExample) 2007-07-12
JP4501225B2 true JP4501225B2 (ja) 2010-07-14

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Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1323441C (zh) 2001-10-12 2007-06-27 日亚化学工业株式会社 发光装置及其制造方法
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
ATE445233T1 (de) * 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4233268B2 (ja) 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
CN100552997C (zh) 2002-08-01 2009-10-21 日亚化学工业株式会社 半导体发光元件及其制造方法、使用此的发光装置
TWI228272B (en) 2003-09-19 2005-02-21 Tinggi Technologies Pte Ltd Fabrication of semiconductor devices
WO2005088743A1 (en) 2004-03-15 2005-09-22 Tinggi Technologies Private Limited Fabrication of semiconductor devices
WO2005098974A1 (en) 2004-04-07 2005-10-20 Tinggi Technologies Private Limited Fabrication of reflective layer on semiconductor light emitting diodes
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US8685764B2 (en) * 2005-01-11 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Method to make low resistance contact
KR100707955B1 (ko) * 2005-02-07 2007-04-16 (주) 비앤피 사이언스 발광 다이오드 및 이의 제조 방법
TWI257723B (en) * 2005-09-15 2006-07-01 Epitech Technology Corp Vertical light-emitting diode and method for manufacturing the same
US7939351B2 (en) 2005-09-16 2011-05-10 Showa Denko K.K. Production method for nitride semiconductor light emitting device
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
BRPI0619293A2 (pt) 2005-10-21 2011-09-27 Taylor Biomass Energy Llc método para converter um gás de sìntese que contém hidrocarbonetos, sistema para a gaseificação com condicionamento in situ, sistema para converter um gás de sìntese que contém hidrocarbonetos, aparelho para tratar resìduos através da gaseificação e aparelho para condicionar um gás de sìntese que contém hidrocarbonetos
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
KR100735496B1 (ko) * 2006-05-10 2007-07-04 삼성전기주식회사 수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
US8174025B2 (en) * 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
JP4985930B2 (ja) * 2006-11-08 2012-07-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP5214175B2 (ja) * 2007-06-08 2013-06-19 日亜化学工業株式会社 窒化物半導体発光素子および発光素子の製造方法
JP4719244B2 (ja) * 2008-04-25 2011-07-06 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP5381021B2 (ja) * 2008-11-05 2014-01-08 コニカミノルタ株式会社 薄膜トランジスタの製造方法、及び薄膜トランジスタ
JP5066274B1 (ja) 2011-05-16 2012-11-07 株式会社東芝 半導体発光素子
CN103515488A (zh) * 2012-06-25 2014-01-15 杭州华普永明光电股份有限公司 Led芯片的制作工艺及其led芯片
CN118073959B (zh) * 2024-04-16 2024-07-05 苏州长光华芯光电技术股份有限公司 一种低翘曲半导体激光器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3305399B2 (ja) * 1993-04-08 2002-07-22 三菱電機株式会社 半導体装置の製造方法
JP3259811B2 (ja) * 1995-06-15 2002-02-25 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP3914615B2 (ja) * 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法

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