JP4497269B2 - 半導体レーザ素子及びその製造方法 - Google Patents

半導体レーザ素子及びその製造方法 Download PDF

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Publication number
JP4497269B2
JP4497269B2 JP2002243157A JP2002243157A JP4497269B2 JP 4497269 B2 JP4497269 B2 JP 4497269B2 JP 2002243157 A JP2002243157 A JP 2002243157A JP 2002243157 A JP2002243157 A JP 2002243157A JP 4497269 B2 JP4497269 B2 JP 4497269B2
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waveguide
semiconductor laser
ridge
laser device
substrate
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Japanese (ja)
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JP2004087564A5 (enExample
JP2004087564A (ja
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重吾 御友
啓修 成井
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Sony Corp
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Sony Corp
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JP2002243157A 2002-08-23 2002-08-23 半導体レーザ素子及びその製造方法 Expired - Fee Related JP4497269B2 (ja)

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JP2002243157A JP4497269B2 (ja) 2002-08-23 2002-08-23 半導体レーザ素子及びその製造方法

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JP2002243157A JP4497269B2 (ja) 2002-08-23 2002-08-23 半導体レーザ素子及びその製造方法

Related Child Applications (1)

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JP2009217800A Division JP5024637B2 (ja) 2009-09-18 2009-09-18 半導体レーザ素子およびその製造方法

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JP2004087564A JP2004087564A (ja) 2004-03-18
JP2004087564A5 JP2004087564A5 (enExample) 2005-10-27
JP4497269B2 true JP4497269B2 (ja) 2010-07-07

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8044430B2 (en) 2006-01-18 2011-10-25 Panasonic Corporation Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration
JP5344676B2 (ja) * 2008-08-29 2013-11-20 学校法人金沢工業大学 発光素子用基板および発光素子
JP2011210885A (ja) * 2010-03-29 2011-10-20 Panasonic Corp 半導体レーザアレイ及び半導体レーザアレイの製造方法
JP7182532B2 (ja) * 2019-09-27 2022-12-02 パナソニックホールディングス株式会社 半導体発光素子及び発光装置
CN115917897A (zh) * 2020-06-23 2023-04-04 新唐科技日本株式会社 半导体激光元件的制造方法、半导体激光元件及半导体激光装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04305991A (ja) * 1991-04-02 1992-10-28 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP3470086B2 (ja) * 1992-09-10 2003-11-25 三菱電機株式会社 半導体装置の製造方法
JP3608937B2 (ja) * 1998-03-31 2005-01-12 日本オプネクスト株式会社 半導体レーザ
JP2001044561A (ja) * 1999-08-03 2001-02-16 Sony Corp 半導体レーザアレイ及びその作製方法
JP4024463B2 (ja) * 1999-09-27 2007-12-19 シャープ株式会社 半導体発光素子の製造方法
JP3460648B2 (ja) * 1999-11-16 2003-10-27 松下電器産業株式会社 半導体レーザ装置の製造方法
JP2001267687A (ja) * 2000-03-17 2001-09-28 Toshiba Corp 多波長半導体発光装置
JP2002076510A (ja) * 2000-08-23 2002-03-15 Sony Corp 半導体レーザおよびその製造方法

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