JP2005243720A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005243720A5 JP2005243720A5 JP2004048287A JP2004048287A JP2005243720A5 JP 2005243720 A5 JP2005243720 A5 JP 2005243720A5 JP 2004048287 A JP2004048287 A JP 2004048287A JP 2004048287 A JP2004048287 A JP 2004048287A JP 2005243720 A5 JP2005243720 A5 JP 2005243720A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- semiconductor
- semiconductor light
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims description 150
- 239000004065 semiconductor Substances 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 35
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004048287A JP2005243720A (ja) | 2004-02-24 | 2004-02-24 | 半導体発光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004048287A JP2005243720A (ja) | 2004-02-24 | 2004-02-24 | 半導体発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005243720A JP2005243720A (ja) | 2005-09-08 |
| JP2005243720A5 true JP2005243720A5 (enExample) | 2006-09-28 |
Family
ID=35025161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004048287A Pending JP2005243720A (ja) | 2004-02-24 | 2004-02-24 | 半導体発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005243720A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008235442A (ja) | 2007-03-19 | 2008-10-02 | Fujitsu Ltd | 半導体発光素子及びその製造方法 |
| JP5379002B2 (ja) * | 2007-07-17 | 2013-12-25 | 株式会社Ｑｄレーザ | 半導体レーザ及びその製造方法 |
| JP2009283801A (ja) * | 2008-05-26 | 2009-12-03 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
| JP2010272589A (ja) * | 2009-05-19 | 2010-12-02 | Qd Laser Inc | 半導体レーザ |
| CN110768104A (zh) * | 2019-12-02 | 2020-02-07 | 中山德华芯片技术有限公司 | 长波长GaInNAs/InGaAs复合量子点垂直腔面发射激光器 |
-
2004
- 2004-02-24 JP JP2004048287A patent/JP2005243720A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3897186B2 (ja) | 化合物半導体レーザ | |
| JP7464643B2 (ja) | エッチングされた平坦化ｖｃｓｅｌおよびその作製方法 | |
| US8906721B2 (en) | Semiconductor light emitting device and method for manufacturing the same | |
| JP3189791B2 (ja) | 半導体レーザ | |
| JP4594814B2 (ja) | フォトニック結晶レーザ、フォトニック結晶レーザの製造方法、面発光レーザアレイ、光伝送システム、及び書き込みシステム | |
| JPH07235732A (ja) | 半導体レーザ | |
| JP4345483B2 (ja) | 量子ナノ構造半導体レーザ | |
| US7573926B2 (en) | Multiwavelength quantum dot laser element | |
| US8802468B2 (en) | Semiconductor light emitting device and fabrication method for semiconductor light emitting device | |
| EP1553670B1 (en) | Semiconductor device having a quantum well structure including dual barrier layers, semiconductor laser employing the semiconductor device and methods of manufacturing the semiconductor device and the semiconductor laser. | |
| JP2799372B2 (ja) | 量子細線レーザ及びその製造方法 | |
| JP2004253802A (ja) | 改善された温度特性を有するＧａＡｓＳｂ／ＧａＡｓ素子 | |
| JP2001223433A (ja) | 垂直空洞半導体面発光レーザ素子および該レーザ素子を用いた光学システム | |
| JP5381692B2 (ja) | 半導体発光素子 | |
| JP2005243720A5 (enExample) | ||
| JP2005243720A (ja) | 半導体発光装置 | |
| JP4652712B2 (ja) | 半導体装置 | |
| JP4345673B2 (ja) | 半導体レーザ | |
| JP4497269B2 (ja) | 半導体レーザ素子及びその製造方法 | |
| JP2611509B2 (ja) | 半導体レーザ | |
| JP4043758B2 (ja) | 半導体レーザ素子 | |
| JPH0936472A (ja) | 半導体レ−ザ素子 | |
| JPH06177480A (ja) | 半導体レーザ素子およびその製造方法 | |
| JP2630273B2 (ja) | 分布帰還型半導体レーザ | |
| WO2023281741A1 (ja) | 半導体光素子 |