JP2005243720A - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
JP2005243720A
JP2005243720A JP2004048287A JP2004048287A JP2005243720A JP 2005243720 A JP2005243720 A JP 2005243720A JP 2004048287 A JP2004048287 A JP 2004048287A JP 2004048287 A JP2004048287 A JP 2004048287A JP 2005243720 A JP2005243720 A JP 2005243720A
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JP
Japan
Prior art keywords
layer
semiconductor light
light emitting
emitting device
semiconductor
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Pending
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JP2004048287A
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Japanese (ja)
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JP2005243720A5 (enExample
Inventor
Jugo Otomo
重吾 御友
Tomokimi Hino
智公 日野
Hironobu Narui
啓修 成井
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Sony Corp
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Sony Corp
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Priority to JP2004048287A priority Critical patent/JP2005243720A/ja
Publication of JP2005243720A publication Critical patent/JP2005243720A/ja
Publication of JP2005243720A5 publication Critical patent/JP2005243720A5/ja
Pending legal-status Critical Current

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JP2004048287A 2004-02-24 2004-02-24 半導体発光装置 Pending JP2005243720A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004048287A JP2005243720A (ja) 2004-02-24 2004-02-24 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004048287A JP2005243720A (ja) 2004-02-24 2004-02-24 半導体発光装置

Publications (2)

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JP2005243720A true JP2005243720A (ja) 2005-09-08
JP2005243720A5 JP2005243720A5 (enExample) 2006-09-28

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JP2004048287A Pending JP2005243720A (ja) 2004-02-24 2004-02-24 半導体発光装置

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JP (1) JP2005243720A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283801A (ja) * 2008-05-26 2009-12-03 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
WO2010134426A1 (ja) * 2009-05-19 2010-11-25 株式会社Ｑｄレーザ 半導体レーザ
US8483252B2 (en) 2007-03-19 2013-07-09 Fujitsu Limited Semiconductor light emitting device and fabrication method for semiconductor light emitting device
JP5379002B2 (ja) * 2007-07-17 2013-12-25 株式会社Ｑｄレーザ 半導体レーザ及びその製造方法
CN110768104A (zh) * 2019-12-02 2020-02-07 中山德华芯片技术有限公司 长波长GaInNAs/InGaAs复合量子点垂直腔面发射激光器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8483252B2 (en) 2007-03-19 2013-07-09 Fujitsu Limited Semiconductor light emitting device and fabrication method for semiconductor light emitting device
US8802468B2 (en) 2007-03-19 2014-08-12 Fujitsu Limited Semiconductor light emitting device and fabrication method for semiconductor light emitting device
JP5379002B2 (ja) * 2007-07-17 2013-12-25 株式会社Ｑｄレーザ 半導体レーザ及びその製造方法
JP2009283801A (ja) * 2008-05-26 2009-12-03 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
WO2010134426A1 (ja) * 2009-05-19 2010-11-25 株式会社Ｑｄレーザ 半導体レーザ
JP2010272589A (ja) * 2009-05-19 2010-12-02 Qd Laser Inc 半導体レーザ
CN110768104A (zh) * 2019-12-02 2020-02-07 中山德华芯片技术有限公司 长波长GaInNAs/InGaAs复合量子点垂直腔面发射激光器

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