JP4492786B2 - 感放射線性組成物 - Google Patents
感放射線性組成物 Download PDFInfo
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- JP4492786B2 JP4492786B2 JP2004038048A JP2004038048A JP4492786B2 JP 4492786 B2 JP4492786 B2 JP 4492786B2 JP 2004038048 A JP2004038048 A JP 2004038048A JP 2004038048 A JP2004038048 A JP 2004038048A JP 4492786 B2 JP4492786 B2 JP 4492786B2
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Description
さらに、本発明は、
酸解離性官能基がtert−ブトキシカルボニルオキシ基である該レジスト用化合物および酸発生剤を含む感放射線性組成物、
感放射線性組成物を基板上に塗布する工程と、可視光線、紫外線、放射線のいずれかを照射し露光する工程と、現像液を用いて現像する工程を含むことを特徴とするレジストパターン形成方法、
レジストパターン形成を行った後、エッチングまたはめっきすることにより得られるパターン形成基板、および
特定の化学構造式で示される化合物に関するものである。
(式中,R1〜R18は独立にアルキルオキシカルボニルオキシ基、メトキシ基、置換メトキシ基、1−置換エトキシ基、1−置換−n−プロポキシ基、1−分岐アルキルオキシ基、シリルオキシ基、アルキルカルボニルオキシ基、1−置換アルコキシメトキシ基,および環状酸解離性官能基からなる群から選択される酸解離性官能基、またはヒドロキシ基であり、S1〜S23はアルキルオキシカルボニルオキシ基、メトキシ基、置換メトキシ基、1−置換エトキシ基、1−置換−n−プロポキシ基、1−分岐アルキルオキシ基、シリルオキシ基、アルキルカルボニルオキシ基、1−置換アルコキシメトキシ基,および環状酸解離性官能基からなる群から選択される酸解離性官能基、水素原子、またはヒドロキシ基であり,各化合物においてR1〜R4、R6〜R18、S1〜S5、S7〜S12、S14〜S22うち少なくとも一つは酸解離性官能基である。また、各化合物においてS7〜S12およびS14〜S18のうち少なくとも一つは水素原子ではない。)
(式中、T1〜T7は独立にヒドロキシ基もしくはtert−ブトキシカルボニルオキシ基であり、U1〜U4は独立に水素原子、ヒドロキシ基もしくはtert−ブトキシカルボニルオキシ基であり、各化合物においてT1〜T4、U1〜U4のうち少なくとも1つはtert−ブトキシカルボニルオキシ基である。)
溶解促進剤の配合量は、使用される溶解促進剤の種類に応じて適宜調節されるが、上記レジスト用化合物100重量部当たり、30重量部以下が好ましく、より好ましくは10重量部以下である。
増感剤の配合量は、本発明におけるレジスト用化合物100重量部当たり、30重量部以下が好ましく、より好ましくは10重量部以下である。
1.レジスト用化合物の合成
(+)−カテキン(シグマ−アルドリッチ社製試薬)1.0gにジメチルアセトアミド(DMAc)5mlを加えた溶液にジ−tert−ブチルジカーボネート 5.86g、トリエチルアミン2.93gをゆっくり滴下し、60℃で7時間攪拌した。反応混合物を多量の水に加え析出させた。得られた生成物をアセトンに溶解後多量の水に加え析出させる操作を3回行ったのち、最後に減圧乾燥を行い、目的生成物1.94gを得た。構造はFT−IR、400MHz-1H−NMRにより確認した結果、(+)−カテキンのフェノール性水酸基がほぼ定量的にtert−ブトキシカルボニルオキシ基になった式(9)で示される化合物が得られていることが分かった。
IR:(cm−1)
2980(芳香族C−H伸縮)、1760(C=O伸縮,カルボニル)、1120及び1240(エステルC−O伸縮)
1H−NMR:(400MHz、(CD3)2SO、内部標準TMS)
δ(ppm)7.30〜7.39(3H B環Ph−H)、6.80〜6.83(2H A環Ph−H)、5.42(1H Ph−C−H)、5.20〜5.24(1H O−C−H)、2.73〜2.74(2H メチレン)、1.48〜1.52及び1.35(45H −C(CH 3)3)
1で合成した生成物0.5g、1,2−ナフトキノンー2−ジアジドー5−スルホン酸ナトリウム(東京化成工業製試薬)0.025g、乳酸エチル/プロピレングリコールモノメチルエーテルアセテート(10/4)4.5gの均一溶液としたのち、孔径0.2μmのテフロン(登録商標)製メンブランフィルターで濾過して、レジスト溶液を調製した。一方、清浄なシリコンウェハ上にアルミニウム(SiおよびCu合金)薄膜約200nmを日本真空技術製SH−550型ハイレートスパッタリング装置を用いて蒸着し、基板とした。レジスト溶液を基板上に回転塗布した後、100℃で露光前ベークを行い、厚さ約0.2μmのレジスト被膜を形成した。該レジスト被膜を波長365nmのi線1320mJ/cm2で露光した。140℃で10分間熱処理を行った後,2.38質量%テトラメチルアンモニウムヒドロキシド水溶液を用い、静置法により、23℃で5秒間現像を行った。その後、水で30秒間洗浄し、乾燥して、ポジ型のレジストパターンを形成した。その結果、5μmラインアンドスペースのレジストパターンが得られた。次に、0.1N水酸化ナトリウム水溶液を用いて3分間エッチングを行った後、純水で洗浄した。その後、アセトンで洗浄してレジストパターンを剥離した。その結果、5μmラインアンドスペースのパターンが形成された基板が得られた。
1.ポリフェノール化合物の抽出
発酵させておらず、細かく挽いたCamellia sinensisの葉(株式会社伊藤園製緑茶 商品名:すぐ出る粉茶)0.1kgを、それぞれ0.3Lのアセトン/水(4:6)混合物で4回抽出した。抽出液を合わせ、真空下、45℃以下の温度で、100gに濃縮した。濃縮の間、沈殿が生じたが、これを分離し、廃棄した。濃縮物を、塩化メチレン50mlで3回抽出し、塩化メチレン相を廃棄した。水相を、クエン酸アンモニウムの存在下、クエン酸でpH1.5に酸性化し、酢酸エチル50mlで3回抽出した。次に水相を廃棄し、有機相をトルエン7.5mlで希釈し、それぞれ1%H2SO4 15mlで3回逆抽出した。中性になるまで水で洗浄し、Na2SO4で乾燥した後、有機相を30mlになるまで濃縮し、濃縮物を次に塩化メチレン150mlに注いだ。真空下で一夜乾燥後、淡黄褐色の粉末4.0gが得られた。得られた抽出物はFT−IR、400MHz-1H−NMR、HPLC測定により確認した結果、式(10)のエピカテキンガレート及び式(11)のエピガロカテキンガレートを85%、式(12)のエピカテキンおよび式(13)のエピガロカテキンを8%含む混合物であることが分かった。
1で得られた抽出物1.0gにDMAc5mlを加えた溶液にジ−tert−ブチルジカーボネート(3.99g)、トリエチルアミン1.99gをゆっくり滴下し、60℃で7時間攪拌した。反応混合物を多量の水に加え析出させた。得られた生成物をアセトンに溶解後多量の水に加え析出させる操作を3回行ったのち、最後に減圧乾燥を行い、目的生成物1.17gを得た。構造はFT−IR、400MHz-1H−NMRにより確認した結果、フェノール性水酸基がほぼ定量的にtert−ブトキシカルボニルオキシ基になった化合物が得られていることが分かった。
2で合成した生成物1.0g、トリフルオロメタンスルホン酸ジフェニルヨードニウム(和光純薬製試薬)0.03g、乳酸エチル/プロピレングリコールモノメチルエーテルアセテート(10/4)14.0gの均一溶液としたのち、孔径0.2μmのテフロン(登録商標)製メンブランフィルターで濾過して、レジスト溶液を調製した。得られたレジスト溶液を清浄なシリコンウェハ上に回転塗布した後、90℃で露光前ベークを行い、厚さ約0.1μmのレジスト被膜を形成した。該レジスト被膜を電子線照射装置(日本電子株式会社製 JBX−5FE型)を用いて電流量100pA,露光量40μC/cm2の条件で電子線露光した。100℃で1分間熱処理を行った後,2.38重量%のテトラメチルアンモニウムヒドロキシド水溶液を用い、静置法により、23℃で5秒間現像を行った。その後、水で30秒間洗浄し、乾燥して、ポジ型のレジストパターンを形成した。その結果、描画したレジストパターンが得られた。
1.レジスト用化合物の合成
ナリンゲニン(東京化成工業株式会社製試薬)1.2gにアセトン6.8gと4−(ジメチルアミノ)ピリジン5.4mgを加えた溶液にジ−tert−ブチルジカーボネート 4.20gをゆっくり滴下し、40℃で24時間攪拌した。反応混合物を多量の水に加え析出させた。得られた生成物をアセトンに溶解後多量の水に加え析出させる操作を5回行ったのち、最後に減圧乾燥を行い、目的生成物1.49gを得た。構造はFT−IR、400MHz-1H−NMRにより確認した結果、ナリンゲニンのフェノール性水酸基がほぼ定量的にtert−ブトキシカルボニルオキシ基になった式(14)で示される化合物が得られていることが分かった。
IR:(cm−1)
2980(芳香族C−H伸縮)、1760(C=O伸縮,カルボニル)、1120及び1240(エステルC−O伸縮)
1H−NMR:(400MHz、(CD3)2SO、内部標準TMS)
δ(ppm)7.60、7.62、7.25及び7.27(4H B環Ph−H)、6.97及び6.85(2H A環Ph−H)、5.71及び5.74(1H O−C−H)、2.76〜2.81及び3.29〜3.33(2H メチレン)、1.44〜1.53(27H −C(CH 3)3)
1で合成した生成物0.5g、1,2−ナフトキノンー2−ジアジドー5−スルホン酸ナトリウム(東京化成工業製試薬)0.025g、乳酸エチル/プロピレングリコールモノメチルエーテルアセテート(10/4)4.5gの均一溶液としたのち、孔径0.2μmのテフロン(登録商標)製メンブランフィルターで濾過して、レジスト溶液を調製した。レジスト溶液を基板上に回転塗布した後、100℃で露光前ベークを行い、厚さ約0.2μmのレジスト被膜を形成した。該レジスト被膜を波長365nmのi線1320mJ/cm2で露光した。140℃で10分間熱処理を行った後,2.38質量%テトラメチルアンモニウムヒドロキシド水溶液を用い、静置法により、23℃で5秒間現像を行った。その後、水で30秒間洗浄し、乾燥して、ポジ型のレジストパターンを形成した。その結果、5μmラインアンドスペースのレジストパターンが得られた。
Claims (7)
- フラボノイド系ポリフェノール化合物に酸解離性基を導入したレジスト用化合物および酸発生剤を含む感放射線性組成物であって、レジスト用化合物が、式(1)または(2)で示される化合物である感放射線性組成物。
- フラボノイド系ポリフェノール化合物に酸解離性基を導入したレジスト用化合物および酸発生剤を含む感放射線性組成物であって、レジスト用化合物が、式(3)で示される化合物である感放射線性組成物。
- 酸解離性官能基がtert−ブトキシカルボニルオキシ基である請求項1または2に記載の感放射線性組成物。
- 請求項1乃至3のいずれかに記載の感放射線性組成物を基板上に塗布する工程と、可視光線、紫外線、放射線のいずれかを照射し露光する工程と、現像液を用いて現像する工程を含むことを特徴とするレジストパターン形成方法。
- 請求項4記載のレジストパターン形成を行った後、エッチングまたはめっきすることにより得られるパターン形成基板。
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JP4588551B2 (ja) * | 2005-06-16 | 2010-12-01 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP6401982B2 (ja) * | 2014-09-10 | 2018-10-10 | 株式会社Adeka | 潜在性添加剤及び感光性組成物 |
EP3605227A4 (en) * | 2017-03-31 | 2020-04-22 | The School Corporation Kansai University | RESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME, AND COMPOUND AND RESIN |
KR20190129901A (ko) * | 2017-03-31 | 2019-11-20 | 더 스쿨 코포레이션 칸사이 유니버시티 | 화합물, 화합물을 포함하는 레지스트 조성물 및 이를 이용하는 패턴형성방법 |
Citations (3)
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JPH06227961A (ja) * | 1992-09-01 | 1994-08-16 | L'oreal Sa | 化粧料又は医薬組成物 |
JP2001154363A (ja) * | 1999-11-30 | 2001-06-08 | Fuji Photo Film Co Ltd | ポジ型電子線又はx線レジスト組成物 |
JP2003084437A (ja) * | 2001-09-11 | 2003-03-19 | Toray Ind Inc | ポジ型感放射線性組成物 |
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JPH06227961A (ja) * | 1992-09-01 | 1994-08-16 | L'oreal Sa | 化粧料又は医薬組成物 |
JP2001154363A (ja) * | 1999-11-30 | 2001-06-08 | Fuji Photo Film Co Ltd | ポジ型電子線又はx線レジスト組成物 |
JP2003084437A (ja) * | 2001-09-11 | 2003-03-19 | Toray Ind Inc | ポジ型感放射線性組成物 |
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