JP4485510B2 - 半導体層構造の成長方法 - Google Patents
半導体層構造の成長方法 Download PDFInfo
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- JP4485510B2 JP4485510B2 JP2006307124A JP2006307124A JP4485510B2 JP 4485510 B2 JP4485510 B2 JP 4485510B2 JP 2006307124 A JP2006307124 A JP 2006307124A JP 2006307124 A JP2006307124 A JP 2006307124A JP 4485510 B2 JP4485510 B2 JP 4485510B2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 105
- 229910052739 hydrogen Inorganic materials 0.000 claims description 105
- 239000001257 hydrogen Substances 0.000 claims description 105
- 150000004767 nitrides Chemical class 0.000 claims description 75
- 239000002019 doping agent Substances 0.000 claims description 70
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 229910052733 gallium Inorganic materials 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 21
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
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Description
(a)第1の半導体層を成長させる工程と、
(b)上記第1の半導体層中に水素を導入する工程と、
(c)上記第1の半導体層の上に少なくとも1つの他の半導体層を成長させ、それによって半導体層構造を形成する工程と、
(d)上記第1の半導体層の選択された部分をアニールし、それによって上記第1の半導体層の選択された部分の電気抵抗を変化させる工程とを含み、
上記アニール工程(d)が、上記少なくとも1つの他の半導体層の電気抵抗を有意に(significantly)変化させない半導体層構造の成長方法を提供する。
上記工程(a)および上記工程(c)が、上記第1の半導体層および上記少なくとも1つの他の半導体層を分子線エピタキシーによって成長させる工程を含んでいてもよい。
(1)上記半導体層構造を成長させる工程と、
(2)上面の中心にコンタクトを堆積させ、基板1の下面にコンタクトを堆積させる工程と、
(3)順バイアス電圧を印加することで電流阻止層11の所望の部分をアニールし、それによって電流開口部を形成する工程と、
(4)上記上面からコンタクトを取り除く工程と、
(5)少なくとも1つの上層(少なくとも1つの他の窒化物半導体層)12をエッチングすることで、上側ブラッグ・スタックを形成する工程と、
(6)エッチング工程で露出された上面に環状のコンタクト5を堆積させる工程とを必須とする。
図5の方法は、工程5として、選択的アニール工程をさらに含んでいる。図5の選択的アニール工程5は、図4の選択的アニール工程4に対応する工程であり、電流阻止層11の選択された部分11aをアニールする一方、電流阻止層11の他の部分11b,11cをアニールしない工程を含んでいる。選択的アニール工程5の結果として、電流阻止層11の選択された領域(部分)11aのp型ドーパントが、完全に活性化され、それによって、電流阻止層11の選択された領域(部分)11aが低い抵抗を持つ。しかしながら、電流阻止層11のアニールされない部分11b,11cのp型ドーパントは完全には活性化されないので、電流阻止層11のこれら部分11b,11cの抵抗は、高く維持される。したがって、図5の方法によって、前記と同様に、半導体層構造内に埋め込まれ、かつ、アニールされた部分11aに対応する電流開口部を含む電流阻止層11が得られる。
11a 選択された部分
11b 他の部分
11c 他の部分
12 他の窒化物半導体層(他の半導体層)
Claims (22)
- 半導体層構造を成長させる方法であって、
(a)第1の半導体層を成長させる工程と、
(b)上記第1の半導体層中に水素を導入する工程と、
(c)上記第1の半導体層の上に少なくとも1つの他の半導体層を成長させ、それによって半導体層構造を形成する工程と、
(d)上記第1の半導体層の選択された部分をアニールし、それによって上記第1の半導体層の選択された部分の電気抵抗を変化させるアニール工程とを含み、
上記少なくとも1つの他の半導体層中に水素を導入せず、
上記アニール工程(d)が、上記半導体層構造に順バイアス電圧を印加することで、上記第1の半導体層の選択された部分に電流を通す工程を含む半導体層構造の成長方法。 - 半導体層構造を成長させる方法であって、
(a)第1の半導体層を成長させる工程と、
(b)上記第1の半導体層中に水素を導入する工程と、
(c)上記第1の半導体層の上に少なくとも1つの他の半導体層を成長させ、それによって半導体層構造を形成する工程と、
(d)上記第1の半導体層の選択された部分をアニールし、それによって上記第1の半導体層の選択された部分の電気抵抗を変化させるアニール工程とを含み、
上記第1の半導体層中に導入される水素の濃度よりも低い濃度の水素を、上記少なくとも1つの他の半導体層中に導入し、
上記アニール工程(d)が、上記半導体層構造に順バイアス電圧を印加することで、上記第1の半導体層の選択された部分に電流を通す工程を含む半導体層構造の成長方法。 - (e)上記少なくとも1つの他の半導体層で所望の電気抵抗が得られるように上記半導体層構造をアニールする工程をさらに含み、該工程(e)が上記アニール工程(d)の前に行われることで、上記アニール工程(d)が少なくとも1つの他の半導体層の電気抵抗を有意に変化させない請求項2記載の半導体層構造の成長方法。
- 上記第1の半導体層中に水素を導入する工程(b)が、上記第1の半導体層の電気抵抗を上昇させるものであり、上記第1の半導体層の選択された部分をアニールするアニール工程(d)が、上記第1の半導体層の選択された部分の電気抵抗を低下させるものである請求項1ないし3の何れか1項に記載の半導体層構造の成長方法。
- 上記工程(a)が、上記第1の半導体層中にp型ドーパントを導入する工程を含む請求項4記載の半導体層構造の成長方法。
- 上記第1の半導体層中に水素を導入する工程(b)が、上記第1の半導体層の電気抵抗を低下させるものであり、上記第1の半導体層の選択された部分をアニールするアニール工程(d)が、上記第1の半導体層の選択された部分の電気抵抗を上昇させるものである請求項1ないし3の何れか1項に記載の半導体層構造の成長方法。
- 上記工程(a)が、上記第1の半導体層中にp型ドーパントおよびn型ドーパントを導入する工程を含む請求項6記載の半導体層構造の成長方法。
- 上記工程(b)が、上記工程(a)と同時に行われる請求項1ないし7の何れか1項に記載の半導体層構造の成長方法。
- 上記工程(b)が、上記工程(a)の後に行われる請求項1ないし7の何れか1項に記載の半導体層構造の成長方法。
- 上記アニール工程(d)が、上記第1の半導体層の選択された部分をレーザビームを用いてアニールする工程を含む請求項1ないし9の何れか1項に記載の半導体層構造の成長方法。
- 上記アニール工程(d)が、上記第1の半導体層の選択された部分を電子ビームを用いてアニールする工程を含む請求項1ないし10の何れか1項に記載の半導体層構造の成長方法。
- 上記第1の半導体層の選択された部分の電流密度が5kA/cm2以上となるように電流を通す工程を含む請求項1ないし10の何れか1項に記載の半導体層構造の成長方法。
- 上記第1の半導体層の選択された部分が、上記第1の半導体層のほぼ全領域である請求項1ないし12の何れか1項に記載の半導体層構造の成長方法。
- 上記第1の半導体層が、窒化物半導体層である請求項1ないし13の何れか1項に記載の半導体層構造の成長方法。
- 上記少なくとも1つの他の半導体層が、窒化物半導体層である請求項14に記載の半導体層構造の成長方法。
- 上記第1の半導体層が、(Al,Ga,In)N層である請求項14または15に記載の半導体層構造の成長方法。
- 上記少なくとも1つの他の半導体層が、(Al,Ga,In)N層である請求項15記載の半導体層構造の成長方法。
- 上記工程(b)が、原子状水素を供給する工程を含む請求項1ないし17の何れか1項に記載の半導体層構造の成長方法。
- 上記工程(b)が、水素同位体を供給する工程を含む請求項1ないし17の何れか1項に記載の半導体層構造の成長方法。
- 請求項1に記載の半導体層構造の成長方法であって、
上記工程(a)および工程(c)が、上記第1の半導体層および上記少なくとも1つの他の半導体層を分子線エピタキシーによって成長させる工程を含む半導体層構造の成長方法。 - 請求項2または3に記載の半導体層構造の成長方法であって、
上記工程(a)および工程(c)が、上記第1の半導体層および上記少なくとも1つの他の半導体層を有機金属気相成長によって成長させる工程を含む半導体層構造の成長方法。 - 上記少なくとも1つの他の半導体層が、ドープされたp型半導体層である請求項1ないし21の何れか1項に記載の半導体層構造の成長方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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US7795054B2 (en) * | 2006-12-08 | 2010-09-14 | Samsung Led Co., Ltd. | Vertical structure LED device and method of manufacturing the same |
US8399273B2 (en) * | 2008-08-18 | 2013-03-19 | Tsmc Solid State Lighting Ltd. | Light-emitting diode with current-spreading region |
US8507940B2 (en) | 2010-04-05 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat dissipation by through silicon plugs |
TWI462334B (zh) * | 2011-08-01 | 2014-11-21 | Lextar Electronics Corp | 發光二極體結構與其製造方法 |
US9312432B2 (en) | 2012-03-13 | 2016-04-12 | Tsmc Solid State Lighting Ltd. | Growing an improved P-GaN layer of an LED through pressure ramping |
JP6067401B2 (ja) * | 2013-02-13 | 2017-01-25 | 学校法人 名城大学 | 半導体発光素子、及び、その製造方法 |
JP6560117B2 (ja) * | 2015-12-25 | 2019-08-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9812609B1 (en) | 2016-04-11 | 2017-11-07 | X Development Llc | Semiconductor device including oxide current aperture |
WO2018083877A1 (ja) * | 2016-11-02 | 2018-05-11 | ソニー株式会社 | 発光素子及びその製造方法 |
US10505072B2 (en) | 2016-12-16 | 2019-12-10 | Nichia Corporation | Method for manufacturing light emitting element |
JP6669144B2 (ja) * | 2016-12-16 | 2020-03-18 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031600A (ja) * | 1998-07-14 | 2000-01-28 | Nec Corp | 半導体レーザの製造方法 |
JP2001044209A (ja) * | 1999-07-27 | 2001-02-16 | Furukawa Electric Co Ltd:The | GaN系半導体装置の製造方法 |
JP2002353144A (ja) * | 2001-05-23 | 2002-12-06 | Ricoh Co Ltd | p型III族窒化物半導体およびその作製方法および半導体装置 |
JP2005136418A (ja) * | 2003-10-28 | 2005-05-26 | Sharp Corp | 半導体レーザダイオードのmbe成長 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55166975A (en) * | 1979-06-14 | 1980-12-26 | Fujitsu Ltd | Manufacture of semiconductor light emitting device |
US4610731A (en) * | 1985-04-03 | 1986-09-09 | At&T Bell Laboratories | Shallow impurity neutralization |
US4654090A (en) * | 1985-09-13 | 1987-03-31 | Xerox Corporation | Selective disordering of well structures by laser annealing |
JP2566955B2 (ja) * | 1987-05-26 | 1996-12-25 | 株式会社東芝 | 半導体レ−ザおよびその製造方法 |
JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
JP3553147B2 (ja) * | 1994-09-05 | 2004-08-11 | 三菱電機株式会社 | 半導体層の製造方法 |
US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
JP2735057B2 (ja) * | 1994-12-22 | 1998-04-02 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JPH08222797A (ja) * | 1995-01-17 | 1996-08-30 | Hewlett Packard Co <Hp> | 半導体装置およびその製造方法 |
JPH08264830A (ja) * | 1995-03-23 | 1996-10-11 | Furukawa Electric Co Ltd:The | 発光素子の製造方法 |
JP3537246B2 (ja) * | 1995-11-14 | 2004-06-14 | 三菱電機株式会社 | 化合物半導体装置の製造方法 |
JP3711635B2 (ja) | 1996-06-17 | 2005-11-02 | ソニー株式会社 | 窒化物系iii−v族化合物半導体の成長方法 |
JPH10294531A (ja) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | 窒化物化合物半導体発光素子 |
JP3349406B2 (ja) * | 1997-08-29 | 2002-11-25 | シャープ株式会社 | 半導体発光素子及びその製造方法 |
CN1284251C (zh) * | 1998-05-08 | 2006-11-08 | 三星电子株式会社 | 使化合物半导体层激活成为p-型化合物半导体层的方法 |
JP2001068782A (ja) * | 1999-08-31 | 2001-03-16 | Matsushita Electronics Industry Corp | 半導体発光装置およびその製造方法 |
US6498111B1 (en) * | 2000-08-23 | 2002-12-24 | Cree Lighting Company | Fabrication of semiconductor materials and devices with controlled electrical conductivity |
US6410941B1 (en) * | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
-
2005
- 2005-11-17 GB GB0523421A patent/GB2432455A/en not_active Withdrawn
-
2006
- 2006-11-13 US US11/558,972 patent/US7504322B2/en not_active Expired - Fee Related
- 2006-11-13 JP JP2006307124A patent/JP4485510B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031600A (ja) * | 1998-07-14 | 2000-01-28 | Nec Corp | 半導体レーザの製造方法 |
JP2001044209A (ja) * | 1999-07-27 | 2001-02-16 | Furukawa Electric Co Ltd:The | GaN系半導体装置の製造方法 |
JP2002353144A (ja) * | 2001-05-23 | 2002-12-06 | Ricoh Co Ltd | p型III族窒化物半導体およびその作製方法および半導体装置 |
JP2005136418A (ja) * | 2003-10-28 | 2005-05-26 | Sharp Corp | 半導体レーザダイオードのmbe成長 |
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