JP4485078B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4485078B2
JP4485078B2 JP2001018600A JP2001018600A JP4485078B2 JP 4485078 B2 JP4485078 B2 JP 4485078B2 JP 2001018600 A JP2001018600 A JP 2001018600A JP 2001018600 A JP2001018600 A JP 2001018600A JP 4485078 B2 JP4485078 B2 JP 4485078B2
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Prior art keywords
semiconductor layer
insulating film
wiring
island
color filters
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JP2001018600A
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Japanese (ja)
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JP2001281704A (ja
JP2001281704A5 (https=
Inventor
舜平 山崎
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2001281704A5 publication Critical patent/JP2001281704A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001018600A 2000-01-26 2001-01-26 半導体装置の作製方法 Expired - Lifetime JP4485078B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001018600A JP4485078B2 (ja) 2000-01-26 2001-01-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000018097 2000-01-26
JP2000-18097 2000-01-26
JP2001018600A JP4485078B2 (ja) 2000-01-26 2001-01-26 半導体装置の作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2006052939A Division JP4485481B2 (ja) 2000-01-26 2006-02-28 半導体装置の作製方法
JP2007000530A Division JP4704363B2 (ja) 2000-01-26 2007-01-05 半導体装置の作製方法
JP2007315909A Division JP2008083731A (ja) 2000-01-26 2007-12-06 半導体装置

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JP2001281704A JP2001281704A (ja) 2001-10-10
JP2001281704A5 JP2001281704A5 (https=) 2006-04-20
JP4485078B2 true JP4485078B2 (ja) 2010-06-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014197199A (ja) * 2014-05-02 2014-10-16 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
US9153352B2 (en) 2001-07-27 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773944B2 (en) 2001-11-07 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
CN101009322B (zh) * 2001-11-09 2012-06-27 株式会社半导体能源研究所 发光器件
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
KR100940342B1 (ko) * 2001-11-13 2010-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그 구동방법
JP4493933B2 (ja) * 2002-05-17 2010-06-30 株式会社半導体エネルギー研究所 表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100900542B1 (ko) 2002-11-14 2009-06-02 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
TW200415945A (en) 2002-11-25 2004-08-16 Toshiba Matsushita Display Tec Organic EL display panel
KR100895313B1 (ko) * 2002-12-11 2009-05-07 삼성전자주식회사 유기 발광 표시판
US7710019B2 (en) 2002-12-11 2010-05-04 Samsung Electronics Co., Ltd. Organic light-emitting diode display comprising auxiliary electrodes
KR101026812B1 (ko) * 2003-11-28 2011-04-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR100595456B1 (ko) 2003-12-29 2006-06-30 엘지.필립스 엘시디 주식회사 액정표시소자의 제조방법
US7414264B2 (en) * 2003-12-30 2008-08-19 Samsung Electronics Co., Ltd. Poly crystalline silicon semiconductor device and method of fabricating the same
JP4954497B2 (ja) * 2004-05-21 2012-06-13 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP4974500B2 (ja) * 2004-09-15 2012-07-11 株式会社半導体エネルギー研究所 半導体装置、モジュール及び電子機器
US7859606B2 (en) 2004-09-15 2010-12-28 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
WO2006129816A1 (en) 2005-05-31 2006-12-07 Semiconductor Energy Laboratory Co., Ltd. Communication system and authentication card
JP4896588B2 (ja) * 2005-05-31 2012-03-14 株式会社半導体エネルギー研究所 半導体装置
KR20070002933A (ko) * 2005-06-30 2007-01-05 엘지.필립스 엘시디 주식회사 폴리 박막 트랜지스터 기판 및 그 제조 방법
JP4572814B2 (ja) * 2005-11-16 2010-11-04 セイコーエプソン株式会社 アクティブマトリクス基板とその製造方法、及び電気光学装置並びに電子機器
JP4760818B2 (ja) * 2007-11-22 2011-08-31 セイコーエプソン株式会社 電気光学基板、並びにこれを具備する電気光学装置及び電子機器
US9069202B2 (en) 2011-03-11 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8937307B2 (en) * 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
KR102717441B1 (ko) 2017-01-16 2024-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
CN114355686B (zh) * 2022-01-07 2023-08-01 武汉华星光电技术有限公司 阵列基板和液晶显示面板
WO2026078872A1 (ja) * 2024-10-11 2026-04-16 シャープディスプレイテクノロジー株式会社 表示装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823640B2 (ja) * 1986-09-12 1996-03-06 セイコーエプソン株式会社 液晶表示装置
JPH0812354B2 (ja) * 1987-10-14 1996-02-07 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法
JPH03175430A (ja) * 1989-12-05 1991-07-30 Nec Corp 反射型液晶表示装置
JP2806741B2 (ja) * 1993-05-24 1998-09-30 日本電気株式会社 カラー液晶ディスプレイ
JPH08106108A (ja) * 1994-10-05 1996-04-23 Fujitsu Ltd 薄膜トランジスタマトリクス及びその製造方法
JP3622934B2 (ja) * 1996-07-31 2005-02-23 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタ型液晶表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153352B2 (en) 2001-07-27 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US9917107B2 (en) 2001-07-27 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US10854636B2 (en) 2001-07-27 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
JP2014197199A (ja) * 2014-05-02 2014-10-16 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器

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Publication number Publication date
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