JP4474887B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP4474887B2
JP4474887B2 JP2003342801A JP2003342801A JP4474887B2 JP 4474887 B2 JP4474887 B2 JP 4474887B2 JP 2003342801 A JP2003342801 A JP 2003342801A JP 2003342801 A JP2003342801 A JP 2003342801A JP 4474887 B2 JP4474887 B2 JP 4474887B2
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Prior art keywords
film
semiconductor layer
layer
protective film
electrode
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Expired - Fee Related
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JP2003342801A
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English (en)
Japanese (ja)
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JP2005109291A5 (enrdf_load_stackoverflow
JP2005109291A (ja
Inventor
靖長 小谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
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Nichia Corp
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Priority to JP2003342801A priority Critical patent/JP4474887B2/ja
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Publication of JP2005109291A5 publication Critical patent/JP2005109291A5/ja
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Publication of JP4474887B2 publication Critical patent/JP4474887B2/ja
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JP2003342801A 2003-10-01 2003-10-01 半導体レーザ素子 Expired - Fee Related JP4474887B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003342801A JP4474887B2 (ja) 2003-10-01 2003-10-01 半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003342801A JP4474887B2 (ja) 2003-10-01 2003-10-01 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2005109291A JP2005109291A (ja) 2005-04-21
JP2005109291A5 JP2005109291A5 (enrdf_load_stackoverflow) 2006-11-09
JP4474887B2 true JP4474887B2 (ja) 2010-06-09

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JP2003342801A Expired - Fee Related JP4474887B2 (ja) 2003-10-01 2003-10-01 半導体レーザ素子

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JP (1) JP4474887B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5098135B2 (ja) * 2004-05-12 2012-12-12 日亜化学工業株式会社 半導体レーザ素子
JP2006351566A (ja) * 2005-06-13 2006-12-28 Sharp Corp 窒化物系半導体レーザ素子
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP4535997B2 (ja) * 2005-12-09 2010-09-01 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP4940987B2 (ja) 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP6241919B2 (ja) * 2013-09-30 2017-12-06 住友電工デバイス・イノベーション株式会社 光学半導体デバイス
JPWO2018180524A1 (ja) * 2017-03-28 2020-02-06 パナソニック株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ装置
JP7332623B2 (ja) * 2018-11-30 2023-08-23 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置

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JP2005109291A (ja) 2005-04-21

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