JP4471694B2 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP4471694B2 JP4471694B2 JP2004094256A JP2004094256A JP4471694B2 JP 4471694 B2 JP4471694 B2 JP 4471694B2 JP 2004094256 A JP2004094256 A JP 2004094256A JP 2004094256 A JP2004094256 A JP 2004094256A JP 4471694 B2 JP4471694 B2 JP 4471694B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000013078 crystal Substances 0.000 claims abstract description 54
- 150000004767 nitrides Chemical class 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 31
- 239000002994 raw material Substances 0.000 claims description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 211
- 239000000758 substrate Substances 0.000 description 29
- 238000005253 cladding Methods 0.000 description 17
- 239000002096 quantum dot Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000001994 activation Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 235000013619 trace mineral Nutrition 0.000 description 4
- 239000011573 trace mineral Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
本実施例においては、図3に示すPIN型の半導体発光素子30を作製した。基板21として2インチ径の厚さ500μmのC面サファイア単結晶を用い、これをMOCVD装置の中に設置した。MOCVD装置には、ガス系としてH2、N2、TMA(トリメチルアルミニウム)、TMG(トリメチルガリウム)、Cp2Mg、NH3、SiH4が取り付けてある。圧力を100Torrに設定した後、H2を平均流速1m/secで流しながら、基板21を1100℃まで昇温した。
(比較例1)
AlN下地層に代えて、600℃の低温でGaN下地層を厚さ0.03μmに形成した以外は、実施例と同様にして半導体発光素子を作製した。この場合においては、半導体発光素子中を電流が流れず、発光しなかった。
(比較例2)
本比較例においては、図1に示すPIN型の半導体発光素子を作製した。
2 バッファ層
3,23 下地層
4,27 n型導電層
5,25 発光層
6 p型クラッド層
7,24 p型導電層
8,29 n型電極
9,28 p型電極
10,30 半導体発光素子
26 n型クラッド層
Claims (4)
- 半導体発光素子を製造する方法であって、
a)所定の基材の上に、少なくともAlを含む第1のIII族窒化物にて、転位密度が1×10 11 /cm 2 以下であり、(002)面のX線ロッキングカーブ半値幅が200秒以下であり、かつ、キャリア密度が1×10 16 /cm 3 以上である下地層を形成する下地層形成工程と、
b)前記下地層の上に、MOCVD法により全III族元素に対するGa含有量が50原子%以上である第2の III族窒化物にてp型半導体層群を形成するp型層形成工程と、
c)水素を含まない雰囲気中で加熱する加熱工程と、
d)前記p型半導体層群の上に、発光層を形成する工程であって、
d-1)前記p型半導体層群の上に、第3のIII族窒化物にて島状結晶を量子効果を発現するように形成する島状結晶形成工程と、
d-2)第4の窒化物に前記島状結晶を埋め込むことにより前記発光層を形成する埋め込み工程と、
を備える発光層形成工程と、
e)前記発光層の上に、全III族元素に対するGa含有量が50原子%以上である第5のIII族窒化物にてn型半導体層群を形成するn型層形成工程と、
を備える、
ことを特徴とする半導体発光素子の製造方法。 - 請求項1に記載の半導体発光素子の製造方法であって、
前記島状結晶形成工程が、MOCVD法により前記島状結晶を形成する工程であり、In原料を供給した後、他のIII族原料及びV族原料を同時に供給する、
ことを特徴とする半導体発光素子の製造方法。 - 請求項1または請求項2に記載の半導体発光素子の製造方法であって、
前記発光層形成工程が、MBE法により前記発光層を形成する工程である、
ことを特徴とする半導体発光素子の製造方法。 - 請求項1ないし請求項3のいずれかに記載の半導体発光素子の製造方法であって、
前記下地層形成工程が、MOCVD法により1100℃以上の温度で前記下地層を形成する工程である、
ことを特徴とする半導体発光素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03290809A EP1471582A1 (en) | 2003-03-31 | 2003-03-31 | Substrate for semiconductor light-emitting element, semiconductor light-emitting element and its fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004343074A JP2004343074A (ja) | 2004-12-02 |
JP4471694B2 true JP4471694B2 (ja) | 2010-06-02 |
Family
ID=32946953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004094256A Expired - Lifetime JP4471694B2 (ja) | 2003-03-31 | 2004-03-29 | 半導体発光素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6943366B2 (ja) |
EP (1) | EP1471582A1 (ja) |
JP (1) | JP4471694B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10347292A1 (de) * | 2003-10-02 | 2005-05-12 | Univ Berlin Humboldt | Halbleitervorrichtung zum Emittieren von Licht |
JP2006165069A (ja) * | 2004-12-02 | 2006-06-22 | Ulvac Japan Ltd | 化合物半導体の成長方法及び装置 |
KR100644970B1 (ko) | 2005-01-12 | 2006-11-14 | 한국과학기술연구원 | 수소화 처리를 이용한 양자점 구조를 가지는 광 소자의제조 방법 |
KR100630120B1 (ko) | 2005-01-31 | 2006-09-27 | 삼성전자주식회사 | 이종 양자점 구조를 갖는 광대역 반도체 광원 |
CN101208810B (zh) * | 2005-03-24 | 2010-05-12 | 科技研究局 | Ⅲ族氮化物白光发光二极管 |
EP1755172A1 (en) * | 2005-08-17 | 2007-02-21 | Ngk Insulators, Ltd. | Semiconductor layered structure and its method of formation, and light emitting device |
CN101384756B (zh) * | 2006-03-01 | 2011-11-23 | 三菱瓦斯化学株式会社 | 采用液相生长法的ZnO单晶的制造方法 |
EP2064751A1 (en) * | 2006-09-22 | 2009-06-03 | Agency for Science, Technology and Research | Group iii nitride white light emitting diode |
KR100990226B1 (ko) * | 2007-11-21 | 2010-10-29 | 우리엘에스티 주식회사 | 3차원 구조의 전방향 반사경을 구비한 질화물계 발광소자및 그 제조방법 |
JP4445556B2 (ja) | 2008-02-18 | 2010-04-07 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
WO2009118784A1 (ja) * | 2008-03-26 | 2009-10-01 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
JP5169972B2 (ja) * | 2008-09-24 | 2013-03-27 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
CN101887936A (zh) * | 2010-05-25 | 2010-11-17 | 华中科技大学 | 一种铟砷量子点有源区结构及发光器件 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088217B2 (ja) * | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
US5488233A (en) * | 1993-03-11 | 1996-01-30 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with compound semiconductor layer |
US5740192A (en) * | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
US6559467B2 (en) * | 1997-11-18 | 2003-05-06 | Technologies And Devices International, Inc. | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
US6566256B1 (en) * | 1999-04-16 | 2003-05-20 | Gbl Technologies, Inc. | Dual process semiconductor heterostructures and methods |
JP3786544B2 (ja) * | 1999-06-10 | 2006-06-14 | パイオニア株式会社 | 窒化物半導体素子の製造方法及びかかる方法により製造された素子 |
TW486829B (en) * | 2000-11-16 | 2002-05-11 | United Epitaxy Co Ltd | Epitaxial growth of nitride semiconductor |
JP3872327B2 (ja) * | 2000-12-04 | 2007-01-24 | 日本碍子株式会社 | 半導体発光素子 |
US20020136932A1 (en) * | 2001-03-21 | 2002-09-26 | Seikoh Yoshida | GaN-based light emitting device |
-
2003
- 2003-03-31 EP EP03290809A patent/EP1471582A1/en not_active Ceased
-
2004
- 2004-03-29 JP JP2004094256A patent/JP4471694B2/ja not_active Expired - Lifetime
- 2004-03-30 US US10/813,565 patent/US6943366B2/en not_active Expired - Lifetime
-
2005
- 2005-03-31 US US11/095,450 patent/US7172956B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7172956B2 (en) | 2007-02-06 |
JP2004343074A (ja) | 2004-12-02 |
US20040188691A1 (en) | 2004-09-30 |
US20050170539A1 (en) | 2005-08-04 |
US6943366B2 (en) | 2005-09-13 |
EP1471582A1 (en) | 2004-10-27 |
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