JP4469572B2 - Ｓｅｍを利用するアンダカットの測定方法 - Google Patents

Ｓｅｍを利用するアンダカットの測定方法 Download PDF

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JP4469572B2
JP4469572B2 JP2003270078A JP2003270078A JP4469572B2 JP 4469572 B2 JP4469572 B2 JP 4469572B2 JP 2003270078 A JP2003270078 A JP 2003270078A JP 2003270078 A JP2003270078 A JP 2003270078A JP 4469572 B2 JP4469572 B2 JP 4469572B2
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Japan
Prior art keywords
angle
electron beam
incident angle
structural element
undercut
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JP2003270078A
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Japanese (ja)
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JP2004132956A5 (enExample
JP2004132956A (ja
Inventor
ジアン・フランセスコ・ロルッソ
ルカ・グレラ
Original Assignee
ケイエルエイ−テンコー テクノロジーズ，コーポレイション
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2611—Stereoscopic measurements and/or imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2003270078A 2002-07-01 2003-07-01 Ｓｅｍを利用するアンダカットの測定方法 Expired - Fee Related JP4469572B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/186,797 US6670612B1 (en) 2002-07-01 2002-07-01 Undercut measurement using SEM

Publications (3)

Publication Number Publication Date
JP2004132956A JP2004132956A (ja) 2004-04-30
JP2004132956A5 JP2004132956A5 (enExample) 2009-12-03
JP4469572B2 true JP4469572B2 (ja) 2010-05-26

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Family Applications (1)

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JP2003270078A Expired - Fee Related JP4469572B2 (ja) 2002-07-01 2003-07-01 Ｓｅｍを利用するアンダカットの測定方法

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US (1) US6670612B1 (enExample)
JP (1) JP4469572B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104508460A (zh) * 2012-06-05 2015-04-08 B-纳米股份有限公司 使用电子显微镜对存在于非真空环境的材料进行分析的系统及方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1668915B (zh) * 2002-07-11 2011-06-15 应用材料以色列公司 用于判定具有次微米截面积的结构元件的界面特征的系统和方法
JP5596896B2 (ja) * 2003-03-28 2014-09-24 イノヴェイショナル・ホールディングズ・エルエルシー 有益な薬剤の濃度勾配を有する、移植可能な医療装置の形成方法
DE102004004597B4 (de) * 2004-01-29 2008-08-07 Qimonda Ag Verfahren zur Vermessung einer Struktur auf einem Halbleiterwafer mit einem Rasterelektronenmikroskop
US7355709B1 (en) 2004-02-23 2008-04-08 Kla-Tencor Technologies Corp. Methods and systems for optical and non-optical measurements of a substrate
JP5367549B2 (ja) 2009-12-07 2013-12-11 株式会社東芝 基板計測方法
US20160336143A1 (en) * 2015-05-15 2016-11-17 Kabushiki Kaisha Toshiba Charged particle beam apparatus and method of calibrating sample position
TWI846364B (zh) 2019-05-21 2024-06-21 美商應用材料股份有限公司 增強的截面特徵量測方法與系統
US11264202B2 (en) 2020-05-18 2022-03-01 Applied Materials Israel Ltd. Generating three dimensional information regarding structural elements of a specimen
CN112563149B (zh) * 2020-12-11 2023-12-01 苏州工业园区纳米产业技术研究院有限公司 精准测量钻刻大小的方法及剥离工艺
EP4099091B1 (en) 2021-06-02 2024-04-10 IMEC vzw Pattern height metrology using an e-beam system

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPS56114269A (en) * 1980-02-15 1981-09-08 Internatl Precision Inc Scanning type electronic microscope
JPH01311551A (ja) * 1988-06-08 1989-12-15 Toshiba Corp パターン形状測定装置
JPH02249908A (ja) * 1989-03-24 1990-10-05 Dainippon Printing Co Ltd レジストパターンの検査方法
JPH07111336B2 (ja) * 1990-02-07 1995-11-29 株式会社東芝 パターン寸法測定方法及び装置
US6411377B1 (en) * 1991-04-02 2002-06-25 Hitachi, Ltd. Optical apparatus for defect and particle size inspection
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JP3265724B2 (ja) * 1993-07-14 2002-03-18 株式会社日立製作所 荷電粒子線装置
US5739909A (en) * 1995-10-10 1998-04-14 Lucent Technologies Inc. Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry
US6066849A (en) * 1997-01-16 2000-05-23 Kla Tencor Scanning electron beam microscope
US5869833A (en) * 1997-01-16 1999-02-09 Kla-Tencor Corporation Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
US6054710A (en) * 1997-12-18 2000-04-25 Cypress Semiconductor Corp. Method and apparatus for obtaining two- or three-dimensional information from scanning electron microscopy
US6031614A (en) * 1998-12-02 2000-02-29 Siemens Aktiengesellschaft Measurement system and method for measuring critical dimensions using ellipsometry
JP4361661B2 (ja) * 2000-03-24 2009-11-11 富士通マイクロエレクトロニクス株式会社 線幅測定方法
US6472662B1 (en) * 2000-08-30 2002-10-29 International Business Machines Corporation Automated method for determining several critical dimension properties from scanning electron microscope by using several tilted beam or sample scans
US6911349B2 (en) * 2001-02-16 2005-06-28 Boxer Cross Inc. Evaluating sidewall coverage in a semiconductor wafer
JP4094327B2 (ja) * 2002-04-10 2008-06-04 株式会社日立ハイテクノロジーズ パターン計測方法及びパターン計測装置、並びにパターン工程制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104508460A (zh) * 2012-06-05 2015-04-08 B-纳米股份有限公司 使用电子显微镜对存在于非真空环境的材料进行分析的系统及方法
CN104508460B (zh) * 2012-06-05 2017-09-12 B-纳米股份有限公司 使用电子显微镜对存在于非真空环境的材料进行分析的系统及方法

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Publication number Publication date
JP2004132956A (ja) 2004-04-30
US20040000638A1 (en) 2004-01-01
US6670612B1 (en) 2003-12-30

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