JP4463600B2 - 評価方法 - Google Patents

評価方法 Download PDF

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Publication number
JP4463600B2
JP4463600B2 JP2004091212A JP2004091212A JP4463600B2 JP 4463600 B2 JP4463600 B2 JP 4463600B2 JP 2004091212 A JP2004091212 A JP 2004091212A JP 2004091212 A JP2004091212 A JP 2004091212A JP 4463600 B2 JP4463600 B2 JP 4463600B2
Authority
JP
Japan
Prior art keywords
film
luminance
evaluation method
semiconductor film
crystallinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004091212A
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English (en)
Japanese (ja)
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JP2004311992A5 (enExample
JP2004311992A (ja
Inventor
秀和 宮入
秀之 海老根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to JP2004091212A priority Critical patent/JP4463600B2/ja
Publication of JP2004311992A publication Critical patent/JP2004311992A/ja
Publication of JP2004311992A5 publication Critical patent/JP2004311992A5/ja
Application granted granted Critical
Publication of JP4463600B2 publication Critical patent/JP4463600B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2004091212A 2003-03-26 2004-03-26 評価方法 Expired - Fee Related JP4463600B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004091212A JP4463600B2 (ja) 2003-03-26 2004-03-26 評価方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003085096 2003-03-26
JP2004091212A JP4463600B2 (ja) 2003-03-26 2004-03-26 評価方法

Publications (3)

Publication Number Publication Date
JP2004311992A JP2004311992A (ja) 2004-11-04
JP2004311992A5 JP2004311992A5 (enExample) 2007-05-10
JP4463600B2 true JP4463600B2 (ja) 2010-05-19

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ID=33478287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004091212A Expired - Fee Related JP4463600B2 (ja) 2003-03-26 2004-03-26 評価方法

Country Status (1)

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JP (1) JP4463600B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4912138B2 (ja) * 2005-12-28 2012-04-11 株式会社半導体エネルギー研究所 半導体装置の製造方法、半導体検査装置、及びプログラム
US7842520B2 (en) 2005-12-28 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereof
JP5498659B2 (ja) * 2008-02-07 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射位置安定性評価方法及びレーザ照射装置
JP5436499B2 (ja) * 2011-07-09 2014-03-05 スミックス株式会社 粒径検査方法
KR102032961B1 (ko) * 2012-10-31 2019-10-17 삼성디스플레이 주식회사 실리콘 기판 결정화 방법
JP6353636B2 (ja) * 2013-06-21 2018-07-04 東京エレクトロン株式会社 酸化チタン膜の除去方法および除去装置
US9335276B2 (en) * 2014-03-03 2016-05-10 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for control of excimer laser annealing
JP6096228B2 (ja) * 2015-01-09 2017-03-15 株式会社日本製鋼所 半導体膜の表面ムラ検出装置、レーザアニール装置および半導体膜の表面ムラ検出方法
KR101877274B1 (ko) * 2015-05-29 2018-07-12 에이피시스템 주식회사 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법
KR101939058B1 (ko) * 2015-06-09 2019-01-17 에이피시스템 주식회사 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 레이저 결정화 설비에 기인하는 무라 정량화 방법
JP7390214B2 (ja) * 2020-02-28 2023-12-01 株式会社東京精密 シリコンウエハ表面状態診断方法及び表面改質方法
CN113808902B (zh) * 2021-08-20 2024-09-27 深圳天狼芯半导体有限公司 一种干法刻蚀设备的腔体清理方法、装置、终端和介质

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Publication number Publication date
JP2004311992A (ja) 2004-11-04

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