JP4454226B2 - シリコンとｌｔｃｃを含む電子装置の製造方法及びそれにより製造された電子装置 - Google Patents

シリコンとｌｔｃｃを含む電子装置の製造方法及びそれにより製造された電子装置 Download PDF

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JP4454226B2
JP4454226B2 JP2002551895A JP2002551895A JP4454226B2 JP 4454226 B2 JP4454226 B2 JP 4454226B2 JP 2002551895 A JP2002551895 A JP 2002551895A JP 2002551895 A JP2002551895 A JP 2002551895A JP 4454226 B2 JP4454226 B2 JP 4454226B2
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cooling structure
electronic device
microfluidic cooling
microfluidic
integrated circuit
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JP2004537156A5 (enExample
JP2004537156A (ja
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ティー パイク，ランディー
エム ニュートン，チャールズ
ギャムレン，キャロル
シー ランプフ，レイモンド
オダウド，ベティー
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Harris Corp
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Harris Corp
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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JP2002551895A 2000-12-19 2001-12-10 シリコンとｌｔｃｃを含む電子装置の製造方法及びそれにより製造された電子装置 Expired - Fee Related JP4454226B2 (ja)

Applications Claiming Priority (2)

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US09/741,754 US6809424B2 (en) 2000-12-19 2000-12-19 Method for making electronic devices including silicon and LTCC and devices produced thereby
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KR100574582B1 (ko) 2006-04-28
US20050019986A1 (en) 2005-01-27
US6987033B2 (en) 2006-01-17
US6809424B2 (en) 2004-10-26
EP1362368A2 (en) 2003-11-19
KR20040064602A (ko) 2004-07-19
WO2002050888A3 (en) 2003-08-07
WO2002050888A2 (en) 2002-06-27
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JP2004537156A (ja) 2004-12-09
US20020130408A1 (en) 2002-09-19

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