JP2004537156A5 - - Google Patents

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Publication number
JP2004537156A5
JP2004537156A5 JP2002551895A JP2002551895A JP2004537156A5 JP 2004537156 A5 JP2004537156 A5 JP 2004537156A5 JP 2002551895 A JP2002551895 A JP 2002551895A JP 2002551895 A JP2002551895 A JP 2002551895A JP 2004537156 A5 JP2004537156 A5 JP 2004537156A5
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JP
Japan
Prior art keywords
cooling structure
electronic device
microfluidic
comprised
microfluidic cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002551895A
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English (en)
Japanese (ja)
Other versions
JP2004537156A (ja
JP4454226B2 (ja
Filing date
Publication date
Priority claimed from US09/741,754 external-priority patent/US6809424B2/en
Application filed filed Critical
Publication of JP2004537156A publication Critical patent/JP2004537156A/ja
Publication of JP2004537156A5 publication Critical patent/JP2004537156A5/ja
Application granted granted Critical
Publication of JP4454226B2 publication Critical patent/JP4454226B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002551895A 2000-12-19 2001-12-10 シリコンとltccを含む電子装置の製造方法及びそれにより製造された電子装置 Expired - Fee Related JP4454226B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/741,754 US6809424B2 (en) 2000-12-19 2000-12-19 Method for making electronic devices including silicon and LTCC and devices produced thereby
PCT/US2001/046775 WO2002050888A2 (en) 2000-12-19 2001-12-10 Method for making electronic devices including silicon and ltcc

Publications (3)

Publication Number Publication Date
JP2004537156A JP2004537156A (ja) 2004-12-09
JP2004537156A5 true JP2004537156A5 (enExample) 2005-04-28
JP4454226B2 JP4454226B2 (ja) 2010-04-21

Family

ID=24982035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002551895A Expired - Fee Related JP4454226B2 (ja) 2000-12-19 2001-12-10 シリコンとltccを含む電子装置の製造方法及びそれにより製造された電子装置

Country Status (7)

Country Link
US (2) US6809424B2 (enExample)
EP (1) EP1362368A2 (enExample)
JP (1) JP4454226B2 (enExample)
KR (1) KR100574582B1 (enExample)
CN (1) CN1494739A (enExample)
AU (1) AU2002225952A1 (enExample)
WO (1) WO2002050888A2 (enExample)

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US6741469B1 (en) * 2003-02-07 2004-05-25 Sun Microsystems, Inc. Refrigeration cooling assisted MEMS-based micro-channel cooling system
EP1642335B1 (de) * 2003-07-08 2008-08-13 Infineon Technologies AG Integrierte kühl-schaltungsanordnung, betriebsverfahren und herstellungsverfahren
US7199437B2 (en) * 2004-01-20 2007-04-03 Harris Corporation Fabrication process for embedding optical band gap structures in a low temperature co-fired ceramic substrate
US7115182B2 (en) * 2004-06-15 2006-10-03 Agency For Science, Technology And Research Anodic bonding process for ceramics
JP4375186B2 (ja) * 2004-09-30 2009-12-02 株式会社日立製作所 陽極接合構造を用いた電子装置
US7691723B2 (en) 2005-01-07 2010-04-06 Honeywell International Inc. Bonding system having stress control
JP4740926B2 (ja) 2007-11-27 2011-08-03 フェリカネットワークス株式会社 サービス提供システム、サービス提供サーバ、及び情報端末装置
US7622786B2 (en) * 2007-12-28 2009-11-24 Aptina Imaging Corporation EMI shielding for imager devices
DE102008014619C5 (de) * 2008-03-17 2015-06-25 Friedrich-Schiller-Universität Jena Adaptiver Spiegel und Verfahren zu dessen Herstellung
JP5175650B2 (ja) * 2008-08-06 2013-04-03 ニッコー株式会社 陽極接合可能な磁器及び前記磁器用組成物
JP5130151B2 (ja) * 2008-08-26 2013-01-30 パナソニック株式会社 静電容量型半導体物理量センサの製造方法及び静電容量型半導体物理量センサ
ATE554361T1 (de) * 2009-04-28 2012-05-15 Abb Research Ltd Wärmerohr mit gewundenem rohr
EP2246654B1 (en) * 2009-04-29 2013-12-11 ABB Research Ltd. Multi-row thermosyphon heat exchanger
EP2328172B1 (en) * 2009-10-02 2019-06-26 Abb Research Ltd. A power-electronic arrangement
US8179676B2 (en) * 2010-07-21 2012-05-15 Telefonaktiebolaget L M Ericsson (Publ) Optical interconnects in cooling substrates
CN102815665A (zh) * 2011-06-07 2012-12-12 北京大学 一种低温共烧陶瓷基板内嵌微流管道的接口方法
KR101255935B1 (ko) * 2011-07-08 2013-04-23 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법

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