JP4451683B2 - 半導体発光素子、その製造方法および発光ダイオード - Google Patents

半導体発光素子、その製造方法および発光ダイオード Download PDF

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Publication number
JP4451683B2
JP4451683B2 JP2004065748A JP2004065748A JP4451683B2 JP 4451683 B2 JP4451683 B2 JP 4451683B2 JP 2004065748 A JP2004065748 A JP 2004065748A JP 2004065748 A JP2004065748 A JP 2004065748A JP 4451683 B2 JP4451683 B2 JP 4451683B2
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Japan
Prior art keywords
light emitting
semiconductor
layer
emitting element
transparent substrate
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Expired - Fee Related
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JP2004065748A
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Japanese (ja)
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JP2004297056A5 (https=
JP2004297056A (ja
Inventor
良一 竹内
亙 鍋倉
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP2004065748A priority Critical patent/JP4451683B2/ja
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Publication of JP2004297056A5 publication Critical patent/JP2004297056A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Devices (AREA)
JP2004065748A 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード Expired - Fee Related JP4451683B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004065748A JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003067428 2003-03-13
JP2004065748A JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Publications (3)

Publication Number Publication Date
JP2004297056A JP2004297056A (ja) 2004-10-21
JP2004297056A5 JP2004297056A5 (https=) 2007-04-26
JP4451683B2 true JP4451683B2 (ja) 2010-04-14

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JP2004065748A Expired - Fee Related JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

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JP (1) JP4451683B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4176703B2 (ja) 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
JP4830356B2 (ja) * 2005-06-08 2011-12-07 ソニー株式会社 半導体発光素子及び半導体発光装置
US7915619B2 (en) 2005-12-22 2011-03-29 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP4825003B2 (ja) * 2005-12-28 2011-11-30 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
EP2174351A1 (en) * 2007-07-26 2010-04-14 The Regents of the University of California Light emitting diodes with a p-type surface
JP5505864B2 (ja) * 2010-03-30 2014-05-28 日本電気硝子株式会社 半導体発光素子デバイスの製造方法

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JP2004297056A (ja) 2004-10-21

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