JP4445281B2 - Ｘ線検出器パネル組立体を製造する方法及びデジタルｘ線パネル - Google Patents

Ｘ線検出器パネル組立体を製造する方法及びデジタルｘ線パネル Download PDF

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Publication number
JP4445281B2
JP4445281B2 JP2004033028A JP2004033028A JP4445281B2 JP 4445281 B2 JP4445281 B2 JP 4445281B2 JP 2004033028 A JP2004033028 A JP 2004033028A JP 2004033028 A JP2004033028 A JP 2004033028A JP 4445281 B2 JP4445281 B2 JP 4445281B2
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Japan
Prior art keywords
layer
detector
dam
moisture barrier
ray
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Expired - Fee Related
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JP2004033028A
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Japanese (ja)
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JP2004245833A5 (enExample
JP2004245833A (ja
Inventor
マイケル・クレメント・デジュレ
チン−イウ・ウェイ
デビッド・フランシス・フォベア
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General Electric Co
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General Electric Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2004033028A 2003-02-12 2004-02-10 Ｘ線検出器パネル組立体を製造する方法及びデジタルｘ線パネル Expired - Fee Related JP4445281B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/365,093 US7473903B2 (en) 2003-02-12 2003-02-12 Method and apparatus for deposited hermetic cover for digital X-ray panel

Publications (3)

Publication Number Publication Date
JP2004245833A JP2004245833A (ja) 2004-09-02
JP2004245833A5 JP2004245833A5 (enExample) 2007-03-22
JP4445281B2 true JP4445281B2 (ja) 2010-04-07

Family

ID=32736392

Family Applications (1)

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JP2004033028A Expired - Fee Related JP4445281B2 (ja) 2003-02-12 2004-02-10 Ｘ線検出器パネル組立体を製造する方法及びデジタルｘ線パネル

Country Status (4)

Country Link
US (1) US7473903B2 (enExample)
JP (1) JP4445281B2 (enExample)
DE (1) DE102004005883A1 (enExample)
FR (1) FR2851051A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170138403A (ko) 2015-04-20 2017-12-15 하마마츠 포토닉스 가부시키가이샤 방사선 검출기 및 그 제조 방법

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US7492019B2 (en) * 2003-03-07 2009-02-17 Ic Mechanics, Inc. Micromachined assembly with a multi-layer cap defining a cavity
DE102005055176A1 (de) * 2005-11-18 2007-05-31 Siemens Ag Flachbilddetektor
JP2007149842A (ja) * 2005-11-25 2007-06-14 Sanyo Electric Co Ltd 半導体装置
DE102006022138A1 (de) * 2006-05-11 2007-11-15 Siemens Ag Szintillatorplatte
DE102006024893A1 (de) * 2006-05-24 2007-12-06 Siemens Ag Szintillatorplatte
DE102006038969B4 (de) * 2006-08-21 2013-02-28 Siemens Aktiengesellschaft Röntgenkonverterelement und Verfahren zu dessen Herstellung
JP5883556B2 (ja) * 2010-06-04 2016-03-15 浜松ホトニクス株式会社 放射線イメージセンサ
JP2012168128A (ja) * 2011-02-16 2012-09-06 Canon Inc 放射線検出装置及び放射線撮像システム
US8415628B1 (en) 2011-10-31 2013-04-09 General Electric Company Hermetically sealed radiation detector and methods for making
WO2014187502A1 (en) * 2013-05-24 2014-11-27 Teledyne Dalsa B.V. A moisture protection structure for a device and a fabrication method thereof
US10712454B2 (en) * 2014-07-25 2020-07-14 General Electric Company X-ray detectors supported on a substrate having a metal barrier
WO2016077906A1 (en) * 2014-11-21 2016-05-26 Teledyne Dalsa, Inc. Mammography detector with small chest distance
US10299744B2 (en) 2016-11-17 2019-05-28 General Electric Company Scintillator sealing for solid state x-ray detector
US10631801B2 (en) 2016-11-17 2020-04-28 General Electric Company Scintillator sealing for solid state X-ray detector
US9871073B1 (en) 2016-11-22 2018-01-16 General Electric Company Scintillator sealing for solid state X-ray detector
US9812510B1 (en) 2016-12-14 2017-11-07 General Electric Company Packaging organic photodetectors
JP6877289B2 (ja) * 2017-07-31 2021-05-26 キヤノン株式会社 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法
KR102666048B1 (ko) * 2019-05-29 2024-05-13 엘지디스플레이 주식회사 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법
CN114639689B (zh) * 2020-12-15 2025-03-18 京东方科技集团股份有限公司 平板探测器、其制作方法及x射线成像系统

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US5187369A (en) * 1990-10-01 1993-02-16 General Electric Company High sensitivity, high resolution, solid state x-ray imaging device with barrier layer
US5179284A (en) * 1991-08-21 1993-01-12 General Electric Company Solid state radiation imager having a reflective and protective coating
US5231654A (en) * 1991-12-06 1993-07-27 General Electric Company Radiation imager collimator
US5231655A (en) * 1991-12-06 1993-07-27 General Electric Company X-ray collimator
US5463225A (en) * 1992-06-01 1995-10-31 General Electric Company Solid state radiation imager with high integrity barrier layer and method of fabricating
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5435608A (en) * 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
US5517031A (en) * 1994-06-21 1996-05-14 General Electric Company Solid state imager with opaque layer
US5430298A (en) * 1994-06-21 1995-07-04 General Electric Company CT array with improved photosensor linearity and reduced crosstalk
US6037609A (en) * 1997-01-17 2000-03-14 General Electric Company Corrosion resistant imager
US6167110A (en) * 1997-11-03 2000-12-26 General Electric Company High voltage x-ray and conventional radiography imaging apparatus and method
CN1130200C (zh) * 1998-05-15 2003-12-10 利兰·斯坦福青年大学托管委员会 用于治疗痴呆的糖皮质激素受体拮抗剂
US6172371B1 (en) * 1998-06-15 2001-01-09 General Electric Company Robust cover plate for radiation imager
US6414315B1 (en) * 1999-10-04 2002-07-02 General Electric Company Radiation imaging with continuous polymer layer for scintillator
US6396046B1 (en) 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
US6350990B1 (en) * 1999-11-04 2002-02-26 General Electric Company End cap and sealing method for imager
US6353654B1 (en) * 1999-12-30 2002-03-05 General Electric Company Method and apparatus for compensating for image retention in an amorphous silicon imaging detector
JP4234304B2 (ja) * 2000-05-19 2009-03-04 浜松ホトニクス株式会社 放射線検出器
US6642524B2 (en) * 2002-01-09 2003-11-04 Ge Medical Systems Global Technology Company, Llc Scintillator sealing for solid state X-ray detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170138403A (ko) 2015-04-20 2017-12-15 하마마츠 포토닉스 가부시키가이샤 방사선 검출기 및 그 제조 방법
US10379229B2 (en) 2015-04-20 2019-08-13 Hamamatsu Photonics K.K. Radiation detector and method for producing same

Also Published As

Publication number Publication date
US20040155320A1 (en) 2004-08-12
FR2851051A1 (fr) 2004-08-13
US7473903B2 (en) 2009-01-06
DE102004005883A1 (de) 2004-08-26
JP2004245833A (ja) 2004-09-02

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