FR2851051A1 - Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication - Google Patents

Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication Download PDF

Info

Publication number
FR2851051A1
FR2851051A1 FR0401326A FR0401326A FR2851051A1 FR 2851051 A1 FR2851051 A1 FR 2851051A1 FR 0401326 A FR0401326 A FR 0401326A FR 0401326 A FR0401326 A FR 0401326A FR 2851051 A1 FR2851051 A1 FR 2851051A1
Authority
FR
France
Prior art keywords
layer
detector
hermetic
barrier
scintillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR0401326A
Other languages
English (en)
French (fr)
Inventor
Michael Clement Dejule
Ching Yeu Wei
David Francis Fobare
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2851051A1 publication Critical patent/FR2851051A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR0401326A 2003-02-12 2004-02-11 Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication Withdrawn FR2851051A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/365,093 US7473903B2 (en) 2003-02-12 2003-02-12 Method and apparatus for deposited hermetic cover for digital X-ray panel

Publications (1)

Publication Number Publication Date
FR2851051A1 true FR2851051A1 (fr) 2004-08-13

Family

ID=32736392

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0401326A Withdrawn FR2851051A1 (fr) 2003-02-12 2004-02-11 Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication

Country Status (4)

Country Link
US (1) US7473903B2 (enExample)
JP (1) JP4445281B2 (enExample)
DE (1) DE102004005883A1 (enExample)
FR (1) FR2851051A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7492019B2 (en) * 2003-03-07 2009-02-17 Ic Mechanics, Inc. Micromachined assembly with a multi-layer cap defining a cavity
DE102005055176A1 (de) * 2005-11-18 2007-05-31 Siemens Ag Flachbilddetektor
JP2007149842A (ja) * 2005-11-25 2007-06-14 Sanyo Electric Co Ltd 半導体装置
DE102006022138A1 (de) * 2006-05-11 2007-11-15 Siemens Ag Szintillatorplatte
DE102006024893A1 (de) * 2006-05-24 2007-12-06 Siemens Ag Szintillatorplatte
DE102006038969B4 (de) * 2006-08-21 2013-02-28 Siemens Aktiengesellschaft Röntgenkonverterelement und Verfahren zu dessen Herstellung
JP5883556B2 (ja) * 2010-06-04 2016-03-15 浜松ホトニクス株式会社 放射線イメージセンサ
JP2012168128A (ja) * 2011-02-16 2012-09-06 Canon Inc 放射線検出装置及び放射線撮像システム
US8415628B1 (en) 2011-10-31 2013-04-09 General Electric Company Hermetically sealed radiation detector and methods for making
WO2014187502A1 (en) * 2013-05-24 2014-11-27 Teledyne Dalsa B.V. A moisture protection structure for a device and a fabrication method thereof
US10712454B2 (en) * 2014-07-25 2020-07-14 General Electric Company X-ray detectors supported on a substrate having a metal barrier
US10456098B2 (en) 2014-11-21 2019-10-29 Teledyne Digital Imaging, Inc. Mammography detector with small chest distance
JP6487263B2 (ja) * 2015-04-20 2019-03-20 浜松ホトニクス株式会社 放射線検出器及びその製造方法
US10299744B2 (en) 2016-11-17 2019-05-28 General Electric Company Scintillator sealing for solid state x-ray detector
US10631801B2 (en) 2016-11-17 2020-04-28 General Electric Company Scintillator sealing for solid state X-ray detector
US9871073B1 (en) 2016-11-22 2018-01-16 General Electric Company Scintillator sealing for solid state X-ray detector
US9812510B1 (en) 2016-12-14 2017-11-07 General Electric Company Packaging organic photodetectors
JP6877289B2 (ja) * 2017-07-31 2021-05-26 キヤノン株式会社 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法
KR102666048B1 (ko) * 2019-05-29 2024-05-13 엘지디스플레이 주식회사 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법
CN114639689B (zh) * 2020-12-15 2025-03-18 京东方科技集团股份有限公司 平板探测器、其制作方法及x射线成像系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187369A (en) * 1990-10-01 1993-02-16 General Electric Company High sensitivity, high resolution, solid state x-ray imaging device with barrier layer
US5179284A (en) * 1991-08-21 1993-01-12 General Electric Company Solid state radiation imager having a reflective and protective coating
US5231655A (en) * 1991-12-06 1993-07-27 General Electric Company X-ray collimator
US5231654A (en) * 1991-12-06 1993-07-27 General Electric Company Radiation imager collimator
US5463225A (en) * 1992-06-01 1995-10-31 General Electric Company Solid state radiation imager with high integrity barrier layer and method of fabricating
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5435608A (en) * 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
US5430298A (en) * 1994-06-21 1995-07-04 General Electric Company CT array with improved photosensor linearity and reduced crosstalk
US5517031A (en) * 1994-06-21 1996-05-14 General Electric Company Solid state imager with opaque layer
US6037609A (en) * 1997-01-17 2000-03-14 General Electric Company Corrosion resistant imager
US6167110A (en) * 1997-11-03 2000-12-26 General Electric Company High voltage x-ray and conventional radiography imaging apparatus and method
CA2328411C (en) * 1998-05-15 2008-12-16 Alan F. Schatzberg Glucocorticoid receptor antagonists for the treatment of dementia
US6172371B1 (en) * 1998-06-15 2001-01-09 General Electric Company Robust cover plate for radiation imager
US6414315B1 (en) * 1999-10-04 2002-07-02 General Electric Company Radiation imaging with continuous polymer layer for scintillator
US6396046B1 (en) 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
US6350990B1 (en) * 1999-11-04 2002-02-26 General Electric Company End cap and sealing method for imager
US6353654B1 (en) * 1999-12-30 2002-03-05 General Electric Company Method and apparatus for compensating for image retention in an amorphous silicon imaging detector
JP4234304B2 (ja) * 2000-05-19 2009-03-04 浜松ホトニクス株式会社 放射線検出器
US6642524B2 (en) * 2002-01-09 2003-11-04 Ge Medical Systems Global Technology Company, Llc Scintillator sealing for solid state X-ray detector

Also Published As

Publication number Publication date
US7473903B2 (en) 2009-01-06
JP4445281B2 (ja) 2010-04-07
US20040155320A1 (en) 2004-08-12
JP2004245833A (ja) 2004-09-02
DE102004005883A1 (de) 2004-08-26

Similar Documents

Publication Publication Date Title
JP3126715B2 (ja) シンチレータパネル及び放射線イメージセンサ
JP5031172B2 (ja) シンチレータパネル、放射線イメージセンサおよびそれらの製造方法
CN100587519C (zh) 闪烁器面板和放射线图象传感器
JP3077941B2 (ja) 放射線検出素子及びその製造方法
EP1134596B1 (en) Radiation detection device and method of making the same
US6891164B2 (en) Radiation image sensor and scintillator panel
FR2833358A1 (fr) REVETEMENT DE SCINTILLATEUR AU Csl DIRECT POUR AMELIORER LA LONGEVITE D'UN ENSEMBLE DE DETECTEUR DE RAYONS X NUMERIQUE
US7473903B2 (en) Method and apparatus for deposited hermetic cover for digital X-ray panel
FR2863715A1 (fr) Revetement direct en materiau scintillant pour prolonger la duree de vie d'un ensemble de detecteur de rayonnement
JP2000284053A (ja) 放射線検出素子
WO2001051952A1 (fr) Capteur d'image radiologique et panneau de scintillateurs
KR20080041236A (ko) 신틸레이터 패널 및 방사선 검출기
WO2004079396A1 (ja) シンチレータパネルおよび放射線イメージセンサの製造方法
WO2002023219A1 (en) Scintillator panel, radiation image sensor and methods of producing them
JP4099206B2 (ja) シンチレータパネル及び放射線イメージセンサ
JP3987438B2 (ja) シンチレータパネル及び放射線イメージセンサ
US20140138549A1 (en) X-ray detecting device
US20140110602A1 (en) Scintillator panel and method of manufacturing the same
JP2003262671A (ja) シンチレータパネルおよびその製造方法
US10185041B2 (en) Radiation detector and a method thereof
JP2007271504A (ja) シンチレータパネル、平面検出器および撮影装置
JP4283863B2 (ja) シンチレータパネル
US20140110603A1 (en) Scintillator panel and method of manufacturing the same
EP2012141B1 (en) Radiation image converting panel and radiation image sensor
JPWO1998036290A1 (ja) 放射線検出素子及びその製造方法

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091030