FR2851051A1 - Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication - Google Patents
Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication Download PDFInfo
- Publication number
- FR2851051A1 FR2851051A1 FR0401326A FR0401326A FR2851051A1 FR 2851051 A1 FR2851051 A1 FR 2851051A1 FR 0401326 A FR0401326 A FR 0401326A FR 0401326 A FR0401326 A FR 0401326A FR 2851051 A1 FR2851051 A1 FR 2851051A1
- Authority
- FR
- France
- Prior art keywords
- layer
- detector
- hermetic
- barrier
- scintillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 37
- 239000011248 coating agent Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005538 encapsulation Methods 0.000 claims description 55
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 230000007797 corrosion Effects 0.000 claims description 26
- 238000005260 corrosion Methods 0.000 claims description 26
- 210000000779 thoracic wall Anatomy 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 197
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 24
- 239000000853 adhesive Substances 0.000 description 22
- 230000001070 adhesive effect Effects 0.000 description 22
- 238000007789 sealing Methods 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- 230000005855 radiation Effects 0.000 description 16
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 13
- 239000004408 titanium dioxide Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004581 coalescence Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000009607 mammography Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000353345 Odontesthes regia Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000000038 chest Anatomy 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000013521 mastic Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/365,093 US7473903B2 (en) | 2003-02-12 | 2003-02-12 | Method and apparatus for deposited hermetic cover for digital X-ray panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2851051A1 true FR2851051A1 (fr) | 2004-08-13 |
Family
ID=32736392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0401326A Withdrawn FR2851051A1 (fr) | 2003-02-12 | 2004-02-11 | Panneau detecteur numerique de rayons x a revetement hermetique depose et procede de fabrication |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7473903B2 (enExample) |
| JP (1) | JP4445281B2 (enExample) |
| DE (1) | DE102004005883A1 (enExample) |
| FR (1) | FR2851051A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7492019B2 (en) * | 2003-03-07 | 2009-02-17 | Ic Mechanics, Inc. | Micromachined assembly with a multi-layer cap defining a cavity |
| DE102005055176A1 (de) * | 2005-11-18 | 2007-05-31 | Siemens Ag | Flachbilddetektor |
| JP2007149842A (ja) * | 2005-11-25 | 2007-06-14 | Sanyo Electric Co Ltd | 半導体装置 |
| DE102006022138A1 (de) * | 2006-05-11 | 2007-11-15 | Siemens Ag | Szintillatorplatte |
| DE102006024893A1 (de) * | 2006-05-24 | 2007-12-06 | Siemens Ag | Szintillatorplatte |
| DE102006038969B4 (de) * | 2006-08-21 | 2013-02-28 | Siemens Aktiengesellschaft | Röntgenkonverterelement und Verfahren zu dessen Herstellung |
| JP5883556B2 (ja) * | 2010-06-04 | 2016-03-15 | 浜松ホトニクス株式会社 | 放射線イメージセンサ |
| JP2012168128A (ja) * | 2011-02-16 | 2012-09-06 | Canon Inc | 放射線検出装置及び放射線撮像システム |
| US8415628B1 (en) | 2011-10-31 | 2013-04-09 | General Electric Company | Hermetically sealed radiation detector and methods for making |
| WO2014187502A1 (en) * | 2013-05-24 | 2014-11-27 | Teledyne Dalsa B.V. | A moisture protection structure for a device and a fabrication method thereof |
| US10712454B2 (en) * | 2014-07-25 | 2020-07-14 | General Electric Company | X-ray detectors supported on a substrate having a metal barrier |
| WO2016077906A1 (en) * | 2014-11-21 | 2016-05-26 | Teledyne Dalsa, Inc. | Mammography detector with small chest distance |
| JP6487263B2 (ja) * | 2015-04-20 | 2019-03-20 | 浜松ホトニクス株式会社 | 放射線検出器及びその製造方法 |
| US10299744B2 (en) | 2016-11-17 | 2019-05-28 | General Electric Company | Scintillator sealing for solid state x-ray detector |
| US10631801B2 (en) | 2016-11-17 | 2020-04-28 | General Electric Company | Scintillator sealing for solid state X-ray detector |
| US9871073B1 (en) | 2016-11-22 | 2018-01-16 | General Electric Company | Scintillator sealing for solid state X-ray detector |
| US9812510B1 (en) | 2016-12-14 | 2017-11-07 | General Electric Company | Packaging organic photodetectors |
| JP6877289B2 (ja) * | 2017-07-31 | 2021-05-26 | キヤノン株式会社 | 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法 |
| KR102666048B1 (ko) * | 2019-05-29 | 2024-05-13 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법 |
| CN114639689B (zh) * | 2020-12-15 | 2025-03-18 | 京东方科技集团股份有限公司 | 平板探测器、其制作方法及x射线成像系统 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187369A (en) * | 1990-10-01 | 1993-02-16 | General Electric Company | High sensitivity, high resolution, solid state x-ray imaging device with barrier layer |
| US5179284A (en) * | 1991-08-21 | 1993-01-12 | General Electric Company | Solid state radiation imager having a reflective and protective coating |
| US5231654A (en) * | 1991-12-06 | 1993-07-27 | General Electric Company | Radiation imager collimator |
| US5231655A (en) * | 1991-12-06 | 1993-07-27 | General Electric Company | X-ray collimator |
| US5463225A (en) * | 1992-06-01 | 1995-10-31 | General Electric Company | Solid state radiation imager with high integrity barrier layer and method of fabricating |
| US5399884A (en) * | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
| US5435608A (en) * | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
| US5517031A (en) * | 1994-06-21 | 1996-05-14 | General Electric Company | Solid state imager with opaque layer |
| US5430298A (en) * | 1994-06-21 | 1995-07-04 | General Electric Company | CT array with improved photosensor linearity and reduced crosstalk |
| US6037609A (en) * | 1997-01-17 | 2000-03-14 | General Electric Company | Corrosion resistant imager |
| US6167110A (en) * | 1997-11-03 | 2000-12-26 | General Electric Company | High voltage x-ray and conventional radiography imaging apparatus and method |
| CN1130200C (zh) * | 1998-05-15 | 2003-12-10 | 利兰·斯坦福青年大学托管委员会 | 用于治疗痴呆的糖皮质激素受体拮抗剂 |
| US6172371B1 (en) * | 1998-06-15 | 2001-01-09 | General Electric Company | Robust cover plate for radiation imager |
| US6414315B1 (en) * | 1999-10-04 | 2002-07-02 | General Electric Company | Radiation imaging with continuous polymer layer for scintillator |
| US6396046B1 (en) | 1999-11-02 | 2002-05-28 | General Electric Company | Imager with reduced FET photoresponse and high integrity contact via |
| US6350990B1 (en) * | 1999-11-04 | 2002-02-26 | General Electric Company | End cap and sealing method for imager |
| US6353654B1 (en) * | 1999-12-30 | 2002-03-05 | General Electric Company | Method and apparatus for compensating for image retention in an amorphous silicon imaging detector |
| JP4234304B2 (ja) * | 2000-05-19 | 2009-03-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
| US6642524B2 (en) * | 2002-01-09 | 2003-11-04 | Ge Medical Systems Global Technology Company, Llc | Scintillator sealing for solid state X-ray detector |
-
2003
- 2003-02-12 US US10/365,093 patent/US7473903B2/en not_active Expired - Fee Related
-
2004
- 2004-02-05 DE DE102004005883A patent/DE102004005883A1/de not_active Withdrawn
- 2004-02-10 JP JP2004033028A patent/JP4445281B2/ja not_active Expired - Fee Related
- 2004-02-11 FR FR0401326A patent/FR2851051A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20040155320A1 (en) | 2004-08-12 |
| US7473903B2 (en) | 2009-01-06 |
| JP4445281B2 (ja) | 2010-04-07 |
| DE102004005883A1 (de) | 2004-08-26 |
| JP2004245833A (ja) | 2004-09-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20091030 |