JP4445281B2 - X線検出器パネル組立体を製造する方法及びデジタルx線パネル - Google Patents
X線検出器パネル組立体を製造する方法及びデジタルx線パネル Download PDFInfo
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- JP4445281B2 JP4445281B2 JP2004033028A JP2004033028A JP4445281B2 JP 4445281 B2 JP4445281 B2 JP 4445281B2 JP 2004033028 A JP2004033028 A JP 2004033028A JP 2004033028 A JP2004033028 A JP 2004033028A JP 4445281 B2 JP4445281 B2 JP 4445281B2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 19
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- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 143
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- 238000001020 plasma etching Methods 0.000 description 5
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- 239000000565 sealant Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000009607 mammography Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- -1 polyparaxylylene Polymers 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000353345 Odontesthes regia Species 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
ジタルデータの作成において次第に普及している。幾つかの既知のデジタルX線イメージングシステムにおいて、線源からの放射線は、医学的診断用途で患者などの被検体に向かって配向される。放射線の一部は患者を透過して検出器に衝突し、そこで検出器が放射線を光フォトンに変換して該光フォトンが感知される。検出器は離散的画素、すなわちピクセルのマトリクスに分割され、各ピクセル領域に衝突する放射線の質又は強度に基いて出力信号をコード化する。放射線強度は放射線が患者を透過すると変化するので、出力信号に基づいて再構築された画像は、従来のX線用感光性フィルム技術により利用可能な画像像と同様の患者の組織投影を提供する。
12 検出器ベース面
16 側壁
18 裏面
20 有効検出器領域
22 ダム領域
24 接触フィンガー領域
28 接触フィンガー
100 密閉シール構造
102 接着領域
104 検出器マトリクス
106 ダム
108 厚さ
109 第2の面
110 シンチレータ材料
111 針構造
112 封入コーティング
114 反射層
116 薄膜マスク
118 密閉層
120 腐食保護層
Claims (10)
- 検出器基板12を備え、該基板が検出器ベース面14と、該検出器ベース面から垂直に延びる複数の側壁16とを含むX線検出器パネル組立体10を製造する方法であって、
前記検出器基板上に検出器マトリクス526を形成する段階と、
前記検出器マトリクスを取り囲むダム530を前記検出器基板上に形成する段階と、
前記検出器マトリクス上にシンチレータ材料534を形成する段階と、
少なくとも1つが前記ダムの表面に延び且つ該ダムを過ぎて延びる密閉カバーを前記シンチレータ材料上に形成する段階と、
段階を含み、
前記密閉カバーを形成する段階が、
前記シンチレータ材料上に前記ダム表面に延びる第1の封入層542を形成する段階と、
前記第1の封入層上に前記検出器マトリクスと前記ダム表面の間の領域まで延びる反射層546を形成する段階と、
前記反射層546及び前記第1の封入層542上に、前記反射層546の端部を過ぎて前記ダムの表面上の第1の封入層の端部まで延びる第2の封入層548を形成する段階と、
前記第2の封入層548上に前記ダムの表面上の前記第2の封入層548の端部まで延びる第1の水分障壁層550を形成する段階と、
前記第1の水分障壁層550上に前記ダムの表面上の前記第1の水分障壁層550を過ぎて延びる第2の水分障壁層552を形成する段階と、
含む方法。 - 前記反射層546が、銀又は金の第1の層、二酸化チタンの第2の層、及びアルミニウムの第3の層を含む請求項1に記載の方法。
- 前記第1の水分障壁層550が、二酸化チタンの第1の層とアルミニウムの第2の層とを含む請求項1に記載の方法。
- 前記第2の水分障壁層552が、二酸化チタン層を含む請求項1に記載の方法。
- 前記シンチレータ材料534を形成する段階が、針構造のヨウ化セシウム(CsI)の層を形成する段階を含む請求項1に記載の方法。
- 検出器基板12と、
前記検出器基板上に形成された検出器マトリクス526と、
前記検出器基板上に形成され、前記検出器マトリクスを取り囲むダム530と、
前記検出器マトリクス上に形成されたシンチレータ材料534と、
前記シンチレータ材料上に形成された密閉カバーと、
を備え、
前記密閉カバーが、
前記シンチレータ材料上に前記ダム表面に延びる第1の封入層542と、
前記第1の封入層上に前記検出器マトリクスと前記ダム表面の間の領域まで延びる反射層546と、
前記反射層546及び前記第1の封入層542上に、前記反射層546の端部を過ぎて前記ダムの表面上の第1の封入層の端部まで延びる第2の封入層548と、
前記第2の封入層548上に前記ダムの表面上の前記第2の封入層548の端部まで延びる第1の水分障壁層550と、
前記第1の水分障壁層550上に前記ダムの表面上の前記第1の水分障壁層550を過ぎて延びる第2の水分障壁層552と、
含むことを特徴とするデジタルX線パネル10。 - 前記反射層546が、銀又は金の第1の層、二酸化チタンの第2の層、及びアルミニウムの第3の層を含む請求項6に記載のデジタルX線パネル10。
- 前記第1の水分障壁層550が、二酸化チタンの第1の層とアルミニウムの第2の層とを含む請求項6に記載のデジタルX線パネル10。
- 前記第2の水分障壁層552が、二酸化チタン層を含む請求項6に記載のデジタルX線パネル10。
- 前記シンチレータ材料534が、針構造のヨウ化セシウム(CsI)の層を含む請求項6に記載のデジタルX線パネル10。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/365,093 US7473903B2 (en) | 2003-02-12 | 2003-02-12 | Method and apparatus for deposited hermetic cover for digital X-ray panel |
Publications (3)
Publication Number | Publication Date |
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JP2004245833A JP2004245833A (ja) | 2004-09-02 |
JP2004245833A5 JP2004245833A5 (ja) | 2007-03-22 |
JP4445281B2 true JP4445281B2 (ja) | 2010-04-07 |
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JP2004033028A Expired - Fee Related JP4445281B2 (ja) | 2003-02-12 | 2004-02-10 | X線検出器パネル組立体を製造する方法及びデジタルx線パネル |
Country Status (4)
Country | Link |
---|---|
US (1) | US7473903B2 (ja) |
JP (1) | JP4445281B2 (ja) |
DE (1) | DE102004005883A1 (ja) |
FR (1) | FR2851051A1 (ja) |
Cited By (1)
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KR20170138403A (ko) | 2015-04-20 | 2017-12-15 | 하마마츠 포토닉스 가부시키가이샤 | 방사선 검출기 및 그 제조 방법 |
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WO1999059596A1 (en) * | 1998-05-15 | 1999-11-25 | The Board Of Trustees Of Leland Stanford Junior University | Glucocorticoid receptor antagonists for the treatment of dementia |
US6172371B1 (en) * | 1998-06-15 | 2001-01-09 | General Electric Company | Robust cover plate for radiation imager |
US6414315B1 (en) * | 1999-10-04 | 2002-07-02 | General Electric Company | Radiation imaging with continuous polymer layer for scintillator |
US6396046B1 (en) | 1999-11-02 | 2002-05-28 | General Electric Company | Imager with reduced FET photoresponse and high integrity contact via |
US6350990B1 (en) * | 1999-11-04 | 2002-02-26 | General Electric Company | End cap and sealing method for imager |
US6353654B1 (en) * | 1999-12-30 | 2002-03-05 | General Electric Company | Method and apparatus for compensating for image retention in an amorphous silicon imaging detector |
JP4234304B2 (ja) * | 2000-05-19 | 2009-03-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
US6642524B2 (en) * | 2002-01-09 | 2003-11-04 | Ge Medical Systems Global Technology Company, Llc | Scintillator sealing for solid state X-ray detector |
-
2003
- 2003-02-12 US US10/365,093 patent/US7473903B2/en not_active Expired - Fee Related
-
2004
- 2004-02-05 DE DE102004005883A patent/DE102004005883A1/de not_active Withdrawn
- 2004-02-10 JP JP2004033028A patent/JP4445281B2/ja not_active Expired - Fee Related
- 2004-02-11 FR FR0401326A patent/FR2851051A1/fr not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170138403A (ko) | 2015-04-20 | 2017-12-15 | 하마마츠 포토닉스 가부시키가이샤 | 방사선 검출기 및 그 제조 방법 |
US10379229B2 (en) | 2015-04-20 | 2019-08-13 | Hamamatsu Photonics K.K. | Radiation detector and method for producing same |
Also Published As
Publication number | Publication date |
---|---|
US20040155320A1 (en) | 2004-08-12 |
JP2004245833A (ja) | 2004-09-02 |
DE102004005883A1 (de) | 2004-08-26 |
US7473903B2 (en) | 2009-01-06 |
FR2851051A1 (fr) | 2004-08-13 |
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