JP4438038B2 - 面型受光素子、およびその製造方法 - Google Patents

面型受光素子、およびその製造方法 Download PDF

Info

Publication number
JP4438038B2
JP4438038B2 JP2000218131A JP2000218131A JP4438038B2 JP 4438038 B2 JP4438038 B2 JP 4438038B2 JP 2000218131 A JP2000218131 A JP 2000218131A JP 2000218131 A JP2000218131 A JP 2000218131A JP 4438038 B2 JP4438038 B2 JP 4438038B2
Authority
JP
Japan
Prior art keywords
substrate
light
electrode
receiving element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000218131A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002033505A (ja
JP2002033505A5 (enExample
Inventor
敏彦 尾内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000218131A priority Critical patent/JP4438038B2/ja
Publication of JP2002033505A publication Critical patent/JP2002033505A/ja
Publication of JP2002033505A5 publication Critical patent/JP2002033505A5/ja
Application granted granted Critical
Publication of JP4438038B2 publication Critical patent/JP4438038B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Mechanical Coupling Of Light Guides (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2000218131A 2000-07-19 2000-07-19 面型受光素子、およびその製造方法 Expired - Fee Related JP4438038B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000218131A JP4438038B2 (ja) 2000-07-19 2000-07-19 面型受光素子、およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000218131A JP4438038B2 (ja) 2000-07-19 2000-07-19 面型受光素子、およびその製造方法

Publications (3)

Publication Number Publication Date
JP2002033505A JP2002033505A (ja) 2002-01-31
JP2002033505A5 JP2002033505A5 (enExample) 2007-09-06
JP4438038B2 true JP4438038B2 (ja) 2010-03-24

Family

ID=18713129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000218131A Expired - Fee Related JP4438038B2 (ja) 2000-07-19 2000-07-19 面型受光素子、およびその製造方法

Country Status (1)

Country Link
JP (1) JP4438038B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220244111A1 (en) * 2021-02-01 2022-08-04 Fuji Electric Co., Ltd. Semiconductor device and temperature measurement method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090976A2 (en) * 2003-04-02 2004-10-21 Sun Microsystems, Inc. Optical communication between face-to-face semiconductor chips
US7723206B2 (en) * 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode
JP5486542B2 (ja) 2011-03-31 2014-05-07 浜松ホトニクス株式会社 フォトダイオードアレイモジュール及びその製造方法
JP6944315B2 (ja) * 2017-09-05 2021-10-06 浜松ホトニクス株式会社 光検出素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639163A (ja) * 1986-06-30 1988-01-14 Nec Corp 半導体受光素子
JP2642645B2 (ja) * 1987-11-19 1997-08-20 株式会社日立製作所 半導体基板の製造方法及び半導体装置の製造方法
JP2651323B2 (ja) * 1992-07-22 1997-09-10 浜松ホトニクス株式会社 半導体エネルギー検出器
JPH06151946A (ja) * 1992-11-12 1994-05-31 Nippon Telegr & Teleph Corp <Ntt> 半導体受光素子およびその製造方法
JPH07153986A (ja) * 1993-12-01 1995-06-16 Fujitsu Ltd 赤外線検知装置
JP3236774B2 (ja) * 1996-02-16 2001-12-10 日本電信電話株式会社 半導体集積回路
JP3610235B2 (ja) * 1998-07-22 2005-01-12 キヤノン株式会社 面型発光素子装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220244111A1 (en) * 2021-02-01 2022-08-04 Fuji Electric Co., Ltd. Semiconductor device and temperature measurement method
US12163845B2 (en) * 2021-02-01 2024-12-10 Fuji Electric Co., Ltd. Semiconductor device and temperature measurement method

Also Published As

Publication number Publication date
JP2002033505A (ja) 2002-01-31

Similar Documents

Publication Publication Date Title
JP3990846B2 (ja) 面型光素子、その製造方法、およびこれを用いた装置
JP3728147B2 (ja) 光電気混載配線基板
EP1744417B1 (en) Semiconductor light emitting element and manufacturing method thereof
US6583445B1 (en) Integrated electronic-optoelectronic devices and method of making the same
US6730990B2 (en) Mountable microstructure and optical transmission apparatus
US7968429B2 (en) Method of manufacturing a semiconductor photodetector device by removing the semiconductor substrate on one surface after forming the light-transmitting layer on the opposing surface
JP2002286959A (ja) 半導体装置、光電融合基板、及びそれらの製造方法
US20190123231A1 (en) Optoelectronic integrated semiconductor module and method for manufacturing same
JP2000114581A (ja) 電気的相互連結及び光学的相互連結を具備した多層光電子基板並びにその製造方法
JP2000049414A (ja) 光機能素子装置、これを用いた光送受信装置、光インターコネクション装置および光記録装置
CN117254345B (zh) 一种模块化的硅基异质光电集成架构及方法
JP3684112B2 (ja) 光電気混載配線基板、その駆動方法、およびそれを用いた電子回路装置
US7834413B2 (en) Semiconductor photodetector and method of manufacturing the same
JP2002031747A (ja) 面型光素子実装体、その作製方法、及びそれを用いた装置
JP4438038B2 (ja) 面型受光素子、およびその製造方法
US11630270B2 (en) Semiconductor device and method of manufacturing the same
JP3764671B2 (ja) 光路変換体及びその製造方法並びにそれを用いた光モジュール
JP2004031455A (ja) 光インタコネクション装置
JP2000022285A (ja) 光電融合デバイス
CN113113838B (zh) 集成激光器件及其制备方法
CN120413520A (zh) 封装结构及其制造方法、光电计算设备、人工智能设备
JP2005093722A (ja) 光機能素子および光機能素子の製造方法
JP4331258B2 (ja) 半導体光検出素子
CN118248799A (zh) 包含换能器和波导的光电系统
JP2001166187A (ja) 光モジュール

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070719

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070719

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090616

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090623

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090824

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091224

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091226

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130115

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140115

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees