JP4424630B2 - 化学増幅型レジスト組成物およびレジストパターン形成方法 - Google Patents

化学増幅型レジスト組成物およびレジストパターン形成方法 Download PDF

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Publication number
JP4424630B2
JP4424630B2 JP19909599A JP19909599A JP4424630B2 JP 4424630 B2 JP4424630 B2 JP 4424630B2 JP 19909599 A JP19909599 A JP 19909599A JP 19909599 A JP19909599 A JP 19909599A JP 4424630 B2 JP4424630 B2 JP 4424630B2
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Japan
Prior art keywords
resist
chemically amplified
resist composition
resin
acid
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Expired - Fee Related
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JP19909599A
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English (en)
Japanese (ja)
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JP2001027804A5 (enExample
JP2001027804A (ja
Inventor
匡之 藤原
幸也 脇阪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Mitsubishi Rayon Co Ltd
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Priority to JP19909599A priority Critical patent/JP4424630B2/ja
Publication of JP2001027804A publication Critical patent/JP2001027804A/ja
Publication of JP2001027804A5 publication Critical patent/JP2001027804A5/ja
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Publication of JP4424630B2 publication Critical patent/JP4424630B2/ja
Anticipated expiration legal-status Critical
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Polyurethanes Or Polyureas (AREA)
JP19909599A 1999-07-13 1999-07-13 化学増幅型レジスト組成物およびレジストパターン形成方法 Expired - Fee Related JP4424630B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19909599A JP4424630B2 (ja) 1999-07-13 1999-07-13 化学増幅型レジスト組成物およびレジストパターン形成方法

Applications Claiming Priority (1)

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JP19909599A JP4424630B2 (ja) 1999-07-13 1999-07-13 化学増幅型レジスト組成物およびレジストパターン形成方法

Publications (3)

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JP2001027804A JP2001027804A (ja) 2001-01-30
JP2001027804A5 JP2001027804A5 (enExample) 2006-08-31
JP4424630B2 true JP4424630B2 (ja) 2010-03-03

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4765184B2 (ja) * 2001-03-19 2011-09-07 住友ベークライト株式会社 複合シート。
US8828651B2 (en) 2005-07-25 2014-09-09 Nissan Chemical Industries, Ltd. Positive-type photosensitive resin composition and cured film manufactured therefrom
TWI400570B (zh) 2005-07-25 2013-07-01 Nissan Chemical Ind Ltd 正型感光性樹脂組成物及由其所得之硬化膜
CN101374878B (zh) * 2006-01-25 2012-01-18 日产化学工业株式会社 正型感光性树脂组合物和由其得到的固化膜
TWI408496B (zh) * 2006-03-01 2013-09-11 Zeon Corp A radiation linear resin composition, a laminate, and a method for producing the same
JP4771086B2 (ja) * 2006-03-01 2011-09-14 日本ゼオン株式会社 感放射線性樹脂組成物、積層体及びその製造方法
KR101309252B1 (ko) * 2006-05-16 2013-09-17 닛산 가가쿠 고교 가부시키 가이샤 실록산 화합물을 함유하는 포지티브형 감광성 수지 조성물
WO2007145249A1 (ja) * 2006-06-15 2007-12-21 Nissan Chemical Industries, Ltd. 環構造を持つ高分子化合物を含有するポジ型感光性樹脂組成物
JP5077526B2 (ja) * 2006-09-21 2012-11-21 日産化学工業株式会社 末端に不飽和基を有する化合物を含有するポジ型感光性樹脂組成物
WO2008090827A1 (ja) * 2007-01-22 2008-07-31 Nissan Chemical Industries, Ltd. ポジ型感光性樹脂組成物
JP2008286924A (ja) * 2007-05-16 2008-11-27 Panasonic Corp 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法
WO2011096400A1 (ja) * 2010-02-02 2011-08-11 日産化学工業株式会社 ポジ型感光性樹脂組成物及び撥液性被膜
JP5291744B2 (ja) * 2010-11-02 2013-09-18 富士フイルム株式会社 エッチングレジスト用感光性樹脂組成物、パターン作製方法、mems構造体及びその作製方法、ドライエッチング方法、ウェットエッチング方法、memsシャッターデバイス、並びに、画像表示装置
JP5585796B2 (ja) * 2012-07-06 2014-09-10 日産化学工業株式会社 末端に不飽和基を有する化合物を含有するポジ型感光性樹脂組成物

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