JP4415440B2 - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法 Download PDF

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Publication number
JP4415440B2
JP4415440B2 JP2000017912A JP2000017912A JP4415440B2 JP 4415440 B2 JP4415440 B2 JP 4415440B2 JP 2000017912 A JP2000017912 A JP 2000017912A JP 2000017912 A JP2000017912 A JP 2000017912A JP 4415440 B2 JP4415440 B2 JP 4415440B2
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layer
type
gan
semiconductor layer
semiconductor laser
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Japanese (ja)
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JP2001210912A5 (ru
JP2001210912A (ja
Inventor
史朗 内田
竹春 浅野
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Sony Corp
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Sony Corp
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JP2000017912A 2000-01-24 2000-01-24 半導体レーザの製造方法 Expired - Fee Related JP4415440B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000017912A JP4415440B2 (ja) 2000-01-24 2000-01-24 半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000017912A JP4415440B2 (ja) 2000-01-24 2000-01-24 半導体レーザの製造方法

Publications (3)

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JP2001210912A JP2001210912A (ja) 2001-08-03
JP2001210912A5 JP2001210912A5 (ru) 2006-10-26
JP4415440B2 true JP4415440B2 (ja) 2010-02-17

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JP2000017912A Expired - Fee Related JP4415440B2 (ja) 2000-01-24 2000-01-24 半導体レーザの製造方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6977953B2 (en) 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
JP2006222224A (ja) * 2005-02-09 2006-08-24 Sony Corp 窒化物半導体の製造方法および半導体素子の製造方法
JP2010267735A (ja) * 2009-05-13 2010-11-25 Sharp Corp 窒化物半導体レーザ素子、光ディスク装置および画像表示装置

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JP2001210912A (ja) 2001-08-03

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