JP2001210912A5 - - Google Patents
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- JP2001210912A5 JP2001210912A5 JP2000017912A JP2000017912A JP2001210912A5 JP 2001210912 A5 JP2001210912 A5 JP 2001210912A5 JP 2000017912 A JP2000017912 A JP 2000017912A JP 2000017912 A JP2000017912 A JP 2000017912A JP 2001210912 A5 JP2001210912 A5 JP 2001210912A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000017912A JP4415440B2 (ja) | 2000-01-24 | 2000-01-24 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000017912A JP4415440B2 (ja) | 2000-01-24 | 2000-01-24 | 半導体レーザの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001210912A JP2001210912A (ja) | 2001-08-03 |
| JP2001210912A5 true JP2001210912A5 (ru) | 2006-10-26 |
| JP4415440B2 JP4415440B2 (ja) | 2010-02-17 |
Family
ID=18544837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000017912A Expired - Fee Related JP4415440B2 (ja) | 2000-01-24 | 2000-01-24 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4415440B2 (ru) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6977953B2 (en) | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
| JP2006222224A (ja) * | 2005-02-09 | 2006-08-24 | Sony Corp | 窒化物半導体の製造方法および半導体素子の製造方法 |
| JP2010267735A (ja) * | 2009-05-13 | 2010-11-25 | Sharp Corp | 窒化物半導体レーザ素子、光ディスク装置および画像表示装置 |
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2000
- 2000-01-24 JP JP2000017912A patent/JP4415440B2/ja not_active Expired - Fee Related