JP4402786B2 - アクティブ画素センサーとその制御方法 - Google Patents

アクティブ画素センサーとその制御方法 Download PDF

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Publication number
JP4402786B2
JP4402786B2 JP2000000074A JP2000000074A JP4402786B2 JP 4402786 B2 JP4402786 B2 JP 4402786B2 JP 2000000074 A JP2000000074 A JP 2000000074A JP 2000000074 A JP2000000074 A JP 2000000074A JP 4402786 B2 JP4402786 B2 JP 4402786B2
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pixel
signal
charge
reset transistor
photogate
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JP2000209504A (ja
JP2000209504A5 (enExample
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ロバート・エム・ギダッシュ
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2000000074A 1998-12-30 2000-01-04 アクティブ画素センサーとその制御方法 Expired - Lifetime JP4402786B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/223,039 US6624850B1 (en) 1998-12-30 1998-12-30 Photogate active pixel sensor with high fill factor and correlated double sampling
US09/223039 1998-12-30

Publications (3)

Publication Number Publication Date
JP2000209504A JP2000209504A (ja) 2000-07-28
JP2000209504A5 JP2000209504A5 (enExample) 2007-02-15
JP4402786B2 true JP4402786B2 (ja) 2010-01-20

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ID=22834757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000000074A Expired - Lifetime JP4402786B2 (ja) 1998-12-30 2000-01-04 アクティブ画素センサーとその制御方法

Country Status (5)

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US (1) US6624850B1 (enExample)
EP (1) EP1017107B1 (enExample)
JP (1) JP4402786B2 (enExample)
KR (1) KR20000048438A (enExample)
TW (1) TW453112B (enExample)

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KR100873280B1 (ko) * 2002-10-31 2008-12-11 매그나칩 반도체 유한회사 향상된 리셋 트랜지스터를 구비한 시모스 이미지센서의단위화소
US7046284B2 (en) * 2003-09-30 2006-05-16 Innovative Technology Licensing Llc CMOS imaging system with low fixed pattern noise
US20050083421A1 (en) * 2003-10-16 2005-04-21 Vladimir Berezin Dynamic range enlargement in CMOS image sensors
JP4107269B2 (ja) * 2004-02-23 2008-06-25 ソニー株式会社 固体撮像装置
US7738026B2 (en) * 2005-05-02 2010-06-15 Andrew G. Cartlidge Increasing fill-factor on pixelated sensors
US7158181B2 (en) * 2004-05-04 2007-01-02 Andrew G. Cartlidge System and methods for increasing fill-factor on pixelated sensor arrays
EP1605685B1 (en) * 2004-06-05 2008-11-26 STMicroelectronics (Research & Development) Limited Image sensor with shared reset signal and row select
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US7340631B2 (en) * 2004-07-23 2008-03-04 Hewlett-Packard Development Company, L.P. Drift-tolerant sync pulse circuit in a sync pulse generator
JP4143730B2 (ja) * 2004-12-21 2008-09-03 国立大学法人豊橋技術科学大学 受光素子
US7468532B2 (en) * 2005-07-12 2008-12-23 Aptina Imaging Corporation Method and apparatus providing capacitor on an electrode of an imager photosensor
JP4486015B2 (ja) * 2005-09-13 2010-06-23 パナソニック株式会社 固体撮像装置
KR100790228B1 (ko) * 2005-12-26 2008-01-02 매그나칩 반도체 유한회사 시모스 이미지 센서
JP4764243B2 (ja) 2006-04-20 2011-08-31 株式会社東芝 固体撮像装置
JP4873385B2 (ja) * 2006-07-19 2012-02-08 オリンパス株式会社 固体撮像装置
US7915702B2 (en) * 2007-03-15 2011-03-29 Eastman Kodak Company Reduced pixel area image sensor
US7969494B2 (en) 2007-05-21 2011-06-28 Aptina Imaging Corporation Imager and system utilizing pixel with internal reset control and method of operating same
KR100885921B1 (ko) * 2007-06-07 2009-02-26 삼성전자주식회사 후면으로 수광하는 이미지 센서
US20090103827A1 (en) * 2007-10-19 2009-04-23 John Ladd Methods, systems, and apparatuses that compensate for noise generated in an imager device
US8513709B2 (en) * 2009-07-27 2013-08-20 Samsung Electronics Co., Ltd. Photo detecting apparatus and unit pixel thereof
KR101588459B1 (ko) * 2009-08-20 2016-01-25 주식회사 동부하이텍 이미지 센서 및 그 구동 방법
US8441052B2 (en) 2009-10-21 2013-05-14 Hiok Nam Tay Color-optimized image sensor
JP5238673B2 (ja) * 2009-11-09 2013-07-17 株式会社東芝 固体撮像装置
KR101652933B1 (ko) * 2010-02-17 2016-09-02 삼성전자주식회사 센서, 이의 동작 방법, 및 이를 포함하는 거리 측정 장치
JP5511541B2 (ja) * 2010-06-24 2014-06-04 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP2012006257A (ja) * 2010-06-24 2012-01-12 Canon Inc 画像処理装置および画像処理方法
CN102957880B (zh) * 2012-11-22 2015-08-05 北京思比科微电子技术股份有限公司 一种有源像素、高动态范围图像传感器及操作有源像素的方法
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
US12256576B2 (en) 2021-10-12 2025-03-18 United States Of America, As Represented By The Secretary Of The Navy Differential amplifier gated with quantum dots absorbing incident electromagnetic radiation

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Also Published As

Publication number Publication date
TW453112B (en) 2001-09-01
EP1017107A2 (en) 2000-07-05
US6624850B1 (en) 2003-09-23
KR20000048438A (ko) 2000-07-25
JP2000209504A (ja) 2000-07-28
EP1017107B1 (en) 2011-06-22
EP1017107A3 (en) 2003-01-22

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