JP4402144B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP4402144B2
JP4402144B2 JP2007253116A JP2007253116A JP4402144B2 JP 4402144 B2 JP4402144 B2 JP 4402144B2 JP 2007253116 A JP2007253116 A JP 2007253116A JP 2007253116 A JP2007253116 A JP 2007253116A JP 4402144 B2 JP4402144 B2 JP 4402144B2
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layer
liquid
semiconductor device
peeling
manufacturing
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JP2008109123A5 (enExample
JP2008109123A (ja
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晋吾 江口
洋平 門馬
敦弘 谷
美佐子 廣末
健一 橋本
泰靖 保坂
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007253116A 2006-09-29 2007-09-28 半導体装置の作製方法 Active JP4402144B2 (ja)

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JP2007253116A JP4402144B2 (ja) 2006-09-29 2007-09-28 半導体装置の作製方法

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JP2006266543 2006-09-29
JP2007253116A JP4402144B2 (ja) 2006-09-29 2007-09-28 半導体装置の作製方法

Related Child Applications (4)

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JP2008238910A Division JP5070166B2 (ja) 2006-09-29 2008-09-18 半導体装置の作製方法
JP2009105256A Division JP5297871B2 (ja) 2006-09-29 2009-04-23 装置の作製方法及びｅｌモジュールの作製方法
JP2009105259A Division JP5355202B2 (ja) 2006-09-29 2009-04-23 装置の作製方法及びｅｌモジュールの作製方法
JP2009181726A Division JP5378097B2 (ja) 2006-09-29 2009-08-04 半導体装置の作製方法

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JP2008109123A JP2008109123A (ja) 2008-05-08
JP2008109123A5 JP2008109123A5 (enExample) 2009-08-20
JP4402144B2 true JP4402144B2 (ja) 2010-01-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179358A (ja) * 2007-03-13 2013-09-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
EP2667407B1 (de) * 2009-09-01 2019-01-23 EV Group GmbH Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat mittels eines Lösungsmittels und Schallwellen durch Verformung eines auf einem Filmrahmen montierten flexiblen Films
EP2381464B1 (de) 2010-04-23 2012-09-05 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat
JP5902406B2 (ja) * 2010-06-25 2016-04-13 株式会社半導体エネルギー研究所 分離方法および半導体装置の作製方法
JP6048498B2 (ja) * 2012-04-24 2016-12-21 コニカミノルタ株式会社 積層ガスバリア性樹脂基材の製造方法
KR102309244B1 (ko) * 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014194541A (ja) * 2013-02-26 2014-10-09 Nippon Electric Glass Co Ltd 電子デバイスの製造方法
TWI685026B (zh) 2013-08-06 2020-02-11 日商半導體能源研究所股份有限公司 剝離方法
CN103456689B (zh) * 2013-08-13 2015-02-25 京东方科技集团股份有限公司 用于将柔性基板与玻璃基板分离的装置及生产设备
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
US9427949B2 (en) * 2013-12-03 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and stack manufacturing apparatus
JP6496666B2 (ja) 2013-12-03 2019-04-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
WO2015159887A1 (ja) * 2014-04-15 2015-10-22 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子の製造方法
JP6268483B2 (ja) * 2014-06-03 2018-01-31 旭硝子株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
KR102554691B1 (ko) * 2016-10-07 2023-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179358A (ja) * 2007-03-13 2013-09-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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