JP4392879B2 - 投影露光装置及びデバイスの製造方法 - Google Patents

投影露光装置及びデバイスの製造方法 Download PDF

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Publication number
JP4392879B2
JP4392879B2 JP29002998A JP29002998A JP4392879B2 JP 4392879 B2 JP4392879 B2 JP 4392879B2 JP 29002998 A JP29002998 A JP 29002998A JP 29002998 A JP29002998 A JP 29002998A JP 4392879 B2 JP4392879 B2 JP 4392879B2
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JP
Japan
Prior art keywords
optical system
light source
slit
reticle
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29002998A
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English (en)
Japanese (ja)
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JP2000106339A5 (enExample
JP2000106339A (ja
Inventor
和生 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP29002998A priority Critical patent/JP4392879B2/ja
Priority to US09/406,204 priority patent/US6323937B1/en
Publication of JP2000106339A publication Critical patent/JP2000106339A/ja
Priority to US09/977,998 priority patent/US6577381B2/en
Publication of JP2000106339A5 publication Critical patent/JP2000106339A5/ja
Application granted granted Critical
Publication of JP4392879B2 publication Critical patent/JP4392879B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP29002998A 1998-09-28 1998-09-28 投影露光装置及びデバイスの製造方法 Expired - Fee Related JP4392879B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP29002998A JP4392879B2 (ja) 1998-09-28 1998-09-28 投影露光装置及びデバイスの製造方法
US09/406,204 US6323937B1 (en) 1998-09-28 1999-09-28 Projection exposure apparatus, and device manufacturing method using the same
US09/977,998 US6577381B2 (en) 1998-09-28 2001-10-17 Projection exposure apparatus, and device manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29002998A JP4392879B2 (ja) 1998-09-28 1998-09-28 投影露光装置及びデバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009209287A Division JP2009290243A (ja) 2009-09-10 2009-09-10 投影露光装置及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2000106339A JP2000106339A (ja) 2000-04-11
JP2000106339A5 JP2000106339A5 (enExample) 2005-10-27
JP4392879B2 true JP4392879B2 (ja) 2010-01-06

Family

ID=17750874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29002998A Expired - Fee Related JP4392879B2 (ja) 1998-09-28 1998-09-28 投影露光装置及びデバイスの製造方法

Country Status (2)

Country Link
US (2) US6323937B1 (enExample)
JP (1) JP4392879B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
KR100827874B1 (ko) * 2000-05-22 2008-05-07 가부시키가이샤 니콘 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법
KR100572253B1 (ko) * 2000-08-14 2006-04-19 이리스 엘엘씨 리소그래피장치, 디바이스 제조방법 및 그것에 의하여제조된 디바이스
US6473237B2 (en) * 2000-11-14 2002-10-29 Ball Semiconductor, Inc. Point array maskless lithography
JP4822486B2 (ja) * 2001-09-26 2011-11-24 Ｎｌｔテクノロジー株式会社 半透過反射板及び半透過型液晶表示装置
JP4207478B2 (ja) * 2002-07-12 2009-01-14 株式会社ニコン オプティカルインテグレータ、照明光学装置、露光装置および露光方法
JP5653182B2 (ja) * 2003-05-22 2015-01-14 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
TWI233541B (en) * 2003-10-29 2005-06-01 Hannstar Display Corp An exposure method and an apparatus thereof
JP4458329B2 (ja) * 2003-12-26 2010-04-28 キヤノン株式会社 露光装置及びデバイス製造方法
CN100541722C (zh) 2004-03-26 2009-09-16 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN101667538B (zh) * 2004-08-23 2012-10-10 株式会社半导体能源研究所 半导体器件及其制造方法
US20080090396A1 (en) * 2006-10-06 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Light exposure apparatus and method for making semiconductor device formed using the same
JP5007192B2 (ja) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2009135586A1 (en) * 2008-05-09 2009-11-12 Carl Zeiss Smt Ag Illumination system comprising a fourier optical system
JP6745647B2 (ja) * 2016-06-01 2020-08-26 キヤノン株式会社 走査露光装置および物品製造方法
EP3299780A1 (de) * 2016-09-26 2018-03-28 Berthold Technologies GmbH & Co. KG Verfahren und system zum spektroskopischen messen optischer eigenschaften von proben
JP7336922B2 (ja) * 2019-09-03 2023-09-01 キヤノン株式会社 露光装置及び物品の製造方法
JP7646402B2 (ja) * 2021-03-16 2025-03-17 キヤノン株式会社 照明光学系、露光装置、および物品の製造方法

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DE2210945C3 (de) 1972-03-07 1978-09-21 Gerhard 8200 Rosenheim Krause Belichtungsmefigerät
US4519692A (en) 1983-04-08 1985-05-28 Warner-Lambert Technologies, Inc. Exposure and camera control
US4822975A (en) 1984-01-30 1989-04-18 Canon Kabushiki Kaisha Method and apparatus for scanning exposure
JPS60158449A (ja) 1984-01-30 1985-08-19 Canon Inc 露光装置
US5171965A (en) 1984-02-01 1992-12-15 Canon Kabushiki Kaisha Exposure method and apparatus
JPH0614508B2 (ja) 1985-03-06 1994-02-23 キヤノン株式会社 ステップアンドリピート露光方法
EP0266203B1 (en) 1986-10-30 1994-07-06 Canon Kabushiki Kaisha An illumination device
US4884101A (en) 1987-02-03 1989-11-28 Nikon Corporation Apparatus capable of adjusting the light amount
JPS63193130A (ja) 1987-02-05 1988-08-10 Canon Inc 光量制御装置
US4804978A (en) 1988-02-19 1989-02-14 The Perkin-Elmer Corporation Exposure control system for full field photolithography using pulsed sources
JP2569711B2 (ja) 1988-04-07 1997-01-08 株式会社ニコン 露光制御装置及び該装置による露光方法
US5191374A (en) 1988-11-17 1993-03-02 Nikon Corporation Exposure control apparatus
JPH02177415A (ja) 1988-12-28 1990-07-10 Canon Inc 露光装置
JPH02177313A (ja) 1988-12-28 1990-07-10 Canon Inc 露光制御装置
US5475491A (en) 1989-02-10 1995-12-12 Canon Kabushiki Kaisha Exposure apparatus
JP2731953B2 (ja) 1989-08-07 1998-03-25 キヤノン株式会社 エネルギー量制御装置
US5250797A (en) 1990-10-05 1993-10-05 Canon Kabushiki Kaisha Exposure method and apparatus for controlling light pulse emission using determined exposure quantities and control parameters
US6078381A (en) * 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
JP2862477B2 (ja) 1993-06-29 1999-03-03 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
JP3057998B2 (ja) 1994-02-16 2000-07-04 キヤノン株式会社 照明装置及びそれを用いた投影露光装置

Also Published As

Publication number Publication date
US20020024650A1 (en) 2002-02-28
JP2000106339A (ja) 2000-04-11
US6577381B2 (en) 2003-06-10
US6323937B1 (en) 2001-11-27

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