JP4390297B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4390297B2
JP4390297B2 JP17312098A JP17312098A JP4390297B2 JP 4390297 B2 JP4390297 B2 JP 4390297B2 JP 17312098 A JP17312098 A JP 17312098A JP 17312098 A JP17312098 A JP 17312098A JP 4390297 B2 JP4390297 B2 JP 4390297B2
Authority
JP
Japan
Prior art keywords
fuse
layer
pseudo
insulating layer
fuse layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17312098A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000012691A (ja
JP2000012691A5 (https=
Inventor
猛 岩本
類 豊田
薫 本並
康弘 井戸
雅俊 木村
核太郎 須田
和秀 川辺
秀機 土井
宏昭 関川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP17312098A priority Critical patent/JP4390297B2/ja
Priority to US09/226,161 priority patent/US6259147B1/en
Priority to TW088103825A priority patent/TW411614B/zh
Priority to DE19912490A priority patent/DE19912490C2/de
Priority to KR1019990009747A priority patent/KR100334598B1/ko
Publication of JP2000012691A publication Critical patent/JP2000012691A/ja
Publication of JP2000012691A5 publication Critical patent/JP2000012691A5/ja
Application granted granted Critical
Publication of JP4390297B2 publication Critical patent/JP4390297B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP17312098A 1998-06-19 1998-06-19 半導体装置 Expired - Lifetime JP4390297B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP17312098A JP4390297B2 (ja) 1998-06-19 1998-06-19 半導体装置
US09/226,161 US6259147B1 (en) 1998-06-19 1999-01-07 Semiconductor device having a fuse layer
TW088103825A TW411614B (en) 1998-06-19 1999-03-12 Semiconductor device
DE19912490A DE19912490C2 (de) 1998-06-19 1999-03-19 Halbleitereinrichtung mit einer Schmelzschicht
KR1019990009747A KR100334598B1 (ko) 1998-06-19 1999-03-22 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17312098A JP4390297B2 (ja) 1998-06-19 1998-06-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2000012691A JP2000012691A (ja) 2000-01-14
JP2000012691A5 JP2000012691A5 (https=) 2005-10-13
JP4390297B2 true JP4390297B2 (ja) 2009-12-24

Family

ID=15954519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17312098A Expired - Lifetime JP4390297B2 (ja) 1998-06-19 1998-06-19 半導体装置

Country Status (5)

Country Link
US (1) US6259147B1 (https=)
JP (1) JP4390297B2 (https=)
KR (1) KR100334598B1 (https=)
DE (1) DE19912490C2 (https=)
TW (1) TW411614B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562674B1 (en) * 1999-07-06 2003-05-13 Matsushita Electronics Corporation Semiconductor integrated circuit device and method of producing the same
JP3907911B2 (ja) 2000-03-30 2007-04-18 Ｎｅｃエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
DE10026926C2 (de) * 2000-05-30 2002-06-20 Infineon Technologies Ag Halbleiteranordnung mit optischer Fuse
US6784516B1 (en) * 2000-10-06 2004-08-31 International Business Machines Corporation Insulative cap for laser fusing
JP4079600B2 (ja) * 2001-03-06 2008-04-23 株式会社東芝 半導体装置
US6518643B2 (en) * 2001-03-23 2003-02-11 International Business Machines Corporation Tri-layer dielectric fuse cap for laser deletion
JP2003086687A (ja) * 2001-09-13 2003-03-20 Seiko Epson Corp 半導体装置
KR100444722B1 (ko) * 2002-04-08 2004-08-16 아남반도체 주식회사 퓨즈 라인 제조 방법
KR100709434B1 (ko) * 2005-06-27 2007-04-18 주식회사 하이닉스반도체 반도체 소자의 퓨즈 박스
JP5060100B2 (ja) * 2006-10-26 2012-10-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN119724081B (zh) * 2025-01-15 2025-10-03 闽都创新实验室 一种基于单向截流电流栅调控发光器件驱动方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263558A (ja) 1994-03-18 1995-10-13 Fujitsu Ltd 半導体装置
JP3256626B2 (ja) * 1994-05-15 2002-02-12 株式会社東芝 半導体装置
TW279229B (en) * 1994-12-29 1996-06-21 Siemens Ag Double density fuse bank for the laser break-link programming of an integrated-circuit
US5589706A (en) 1995-05-31 1996-12-31 International Business Machines Corp. Fuse link structures through the addition of dummy structures
US5636172A (en) * 1995-12-22 1997-06-03 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
JPH09213804A (ja) 1996-01-29 1997-08-15 Mitsubishi Electric Corp ヒューズ層を有する半導体装置
US5851903A (en) * 1996-08-20 1998-12-22 International Business Machine Corporation Method of forming closely pitched polysilicon fuses
US5949323A (en) * 1998-06-30 1999-09-07 Clear Logic, Inc. Non-uniform width configurable fuse structure

Also Published As

Publication number Publication date
KR20000005616A (ko) 2000-01-25
DE19912490A1 (de) 2000-01-20
DE19912490C2 (de) 2003-10-16
JP2000012691A (ja) 2000-01-14
TW411614B (en) 2000-11-11
KR100334598B1 (ko) 2002-05-02
US6259147B1 (en) 2001-07-10

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