JP4386559B2 - 加速度センサ及びその製造方法 - Google Patents

加速度センサ及びその製造方法 Download PDF

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Publication number
JP4386559B2
JP4386559B2 JP2000321140A JP2000321140A JP4386559B2 JP 4386559 B2 JP4386559 B2 JP 4386559B2 JP 2000321140 A JP2000321140 A JP 2000321140A JP 2000321140 A JP2000321140 A JP 2000321140A JP 4386559 B2 JP4386559 B2 JP 4386559B2
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JP
Japan
Prior art keywords
polycrystalline silicon
layer
doped polycrystalline
cap
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000321140A
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English (en)
Japanese (ja)
Other versions
JP2002134759A5 (enExample
JP2002134759A (ja
Inventor
靖雄 山口
邦宏 中村
史朗 山▲崎▼
輝也 深浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000321140A priority Critical patent/JP4386559B2/ja
Priority to US09/832,896 priority patent/US6441450B1/en
Publication of JP2002134759A publication Critical patent/JP2002134759A/ja
Publication of JP2002134759A5 publication Critical patent/JP2002134759A5/ja
Application granted granted Critical
Publication of JP4386559B2 publication Critical patent/JP4386559B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
JP2000321140A 2000-10-20 2000-10-20 加速度センサ及びその製造方法 Expired - Fee Related JP4386559B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000321140A JP4386559B2 (ja) 2000-10-20 2000-10-20 加速度センサ及びその製造方法
US09/832,896 US6441450B1 (en) 2000-10-20 2001-04-12 Acceleration sensor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000321140A JP4386559B2 (ja) 2000-10-20 2000-10-20 加速度センサ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002134759A JP2002134759A (ja) 2002-05-10
JP2002134759A5 JP2002134759A5 (enExample) 2006-03-09
JP4386559B2 true JP4386559B2 (ja) 2009-12-16

Family

ID=18799320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000321140A Expired - Fee Related JP4386559B2 (ja) 2000-10-20 2000-10-20 加速度センサ及びその製造方法

Country Status (2)

Country Link
US (1) US6441450B1 (enExample)
JP (1) JP4386559B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4204206B2 (ja) * 2001-06-01 2009-01-07 三菱電機株式会社 半導体装置
KR100514240B1 (ko) * 2001-06-21 2005-09-13 미쓰비시덴키 가부시키가이샤 가속도 센서 및 그 제조방법
JP2005077349A (ja) * 2003-09-03 2005-03-24 Mitsubishi Electric Corp 加速度センサ
JP2005172543A (ja) * 2003-12-10 2005-06-30 Mitsubishi Electric Corp 加速度センサおよび加速度センサの製造方法
US8089144B2 (en) 2008-12-17 2012-01-03 Denso Corporation Semiconductor device and method for manufacturing the same
JP4924663B2 (ja) * 2008-12-25 2012-04-25 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121180A (en) * 1991-06-21 1992-06-09 Texas Instruments Incorporated Accelerometer with central mass in support
JP2001227902A (ja) * 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
US20020048838A1 (en) 2002-04-25
US6441450B1 (en) 2002-08-27
JP2002134759A (ja) 2002-05-10

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