JP4369127B2 - 光電素子配置 - Google Patents

光電素子配置 Download PDF

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Publication number
JP4369127B2
JP4369127B2 JP2002581589A JP2002581589A JP4369127B2 JP 4369127 B2 JP4369127 B2 JP 4369127B2 JP 2002581589 A JP2002581589 A JP 2002581589A JP 2002581589 A JP2002581589 A JP 2002581589A JP 4369127 B2 JP4369127 B2 JP 4369127B2
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JP
Japan
Prior art keywords
dam
photoelectric
sealing material
photoelectric element
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002581589A
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English (en)
Japanese (ja)
Other versions
JP2004528713A5 (https=
JP2004528713A (ja
Inventor
リッシング・ルッツ
オーバーマイヤー・フロリアン
シュロル・フロリアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dr Johannes Heidenhain GmbH
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Dr Johannes Heidenhain GmbH
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7681320&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4369127(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dr Johannes Heidenhain GmbH filed Critical Dr Johannes Heidenhain GmbH
Publication of JP2004528713A publication Critical patent/JP2004528713A/ja
Publication of JP2004528713A5 publication Critical patent/JP2004528713A5/ja
Application granted granted Critical
Publication of JP4369127B2 publication Critical patent/JP4369127B2/ja
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
JP2002581589A 2001-04-11 2002-03-30 光電素子配置 Expired - Fee Related JP4369127B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10118231A DE10118231A1 (de) 2001-04-11 2001-04-11 Optoelektronische Baulelmentanordnung und Verfahren zur Herstellun einer oploelektronischen Bauelementanordnung
PCT/EP2002/003564 WO2002084746A2 (de) 2001-04-11 2002-03-30 Optoelektronische bauelementanordnung und verfahren zur herstellung einer optoelektronischen bauelementanordnung

Publications (3)

Publication Number Publication Date
JP2004528713A JP2004528713A (ja) 2004-09-16
JP2004528713A5 JP2004528713A5 (https=) 2005-12-22
JP4369127B2 true JP4369127B2 (ja) 2009-11-18

Family

ID=7681320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002581589A Expired - Fee Related JP4369127B2 (ja) 2001-04-11 2002-03-30 光電素子配置

Country Status (6)

Country Link
US (1) US6861683B2 (https=)
EP (1) EP1380056B2 (https=)
JP (1) JP4369127B2 (https=)
AT (1) ATE363132T1 (https=)
DE (2) DE10118231A1 (https=)
WO (1) WO2002084746A2 (https=)

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* Cited by examiner, † Cited by third party
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US7170188B2 (en) * 2004-06-30 2007-01-30 Intel Corporation Package stress management
US7161345B2 (en) * 2004-09-09 2007-01-09 Veris Industries, Llc Power monitoring system that determines phase using a superimposed signal
US7273767B2 (en) * 2004-12-31 2007-09-25 Carsem (M) Sdn. Bhd. Method of manufacturing a cavity package
US7364945B2 (en) * 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
US7354800B2 (en) * 2005-04-29 2008-04-08 Stats Chippac Ltd. Method of fabricating a stacked integrated circuit package system
DE102005021991A1 (de) 2005-05-09 2006-11-16 Dr. Johannes Heidenhain Gmbh Optoelektronische Anordnung und Verfahren zu deren Herstellung
US7663214B2 (en) * 2005-07-25 2010-02-16 Kingston Technology Corporation High-capacity memory card and method of making the same
JP2009503837A (ja) * 2005-07-28 2009-01-29 エヌエックスピー ビー ヴィ マイクロエレクトロニクス部品用パッケージ及びその製造方法
US7723146B2 (en) * 2006-01-04 2010-05-25 Stats Chippac Ltd. Integrated circuit package system with image sensor system
US7456088B2 (en) 2006-01-04 2008-11-25 Stats Chippac Ltd. Integrated circuit package system including stacked die
US7768125B2 (en) 2006-01-04 2010-08-03 Stats Chippac Ltd. Multi-chip package system
US7750482B2 (en) 2006-02-09 2010-07-06 Stats Chippac Ltd. Integrated circuit package system including zero fillet resin
US8704349B2 (en) 2006-02-14 2014-04-22 Stats Chippac Ltd. Integrated circuit package system with exposed interconnects
RU2308788C1 (ru) * 2006-03-31 2007-10-20 Федеральное государственное унитарное предприятие "НПО "ОРИОН" ФГУП "НПО "ОРИОН" Способ сборки фотоприемников на основе сернистого свинца с применением метода полимерной герметизации
US20080122122A1 (en) * 2006-11-08 2008-05-29 Weng Fei Wong Semiconductor package with encapsulant delamination-reducing structure and method of making the package
CA2609611A1 (en) * 2007-09-10 2009-03-10 Veris Industries, Llc Split core status indicator
CA2609619A1 (en) 2007-09-10 2009-03-10 Veris Industries, Llc Status indicator
CA2609629A1 (en) * 2007-09-10 2009-03-10 Veris Industries, Llc Current switch with automatic calibration
US8212548B2 (en) 2008-06-02 2012-07-03 Veris Industries, Llc Branch meter with configurable sensor strip arrangement
US8421639B2 (en) 2008-11-21 2013-04-16 Veris Industries, Llc Branch current monitor with an alarm
US8421443B2 (en) 2008-11-21 2013-04-16 Veris Industries, Llc Branch current monitor with calibration
US9335352B2 (en) * 2009-03-13 2016-05-10 Veris Industries, Llc Branch circuit monitor power measurement
US10006948B2 (en) 2011-02-25 2018-06-26 Veris Industries, Llc Current meter with voltage awareness
US9146264B2 (en) 2011-02-25 2015-09-29 Veris Industries, Llc Current meter with on board memory
US9329996B2 (en) 2011-04-27 2016-05-03 Veris Industries, Llc Branch circuit monitor with paging register
US9250308B2 (en) 2011-06-03 2016-02-02 Veris Industries, Llc Simplified energy meter configuration
US9410552B2 (en) 2011-10-05 2016-08-09 Veris Industries, Llc Current switch with automatic calibration
CN102931178A (zh) * 2012-07-30 2013-02-13 易美芯光（北京）科技有限公司 一种新型led集成光源封装结构
US10242969B2 (en) * 2013-11-12 2019-03-26 Infineon Technologies Ag Semiconductor package comprising a transistor chip module and a driver chip module and a method for fabricating the same
US9196510B2 (en) 2013-11-12 2015-11-24 Infineon Technologies Ag Semiconductor package comprising two semiconductor modules and laterally extending connectors
US10408911B2 (en) 2015-12-28 2019-09-10 Veris Industries, Llc Network configurable system for a power meter
US10371730B2 (en) 2015-12-28 2019-08-06 Veris Industries, Llc Branch current monitor with client level access
US10274572B2 (en) 2015-12-28 2019-04-30 Veris Industries, Llc Calibration system for a power meter
US10371721B2 (en) 2015-12-28 2019-08-06 Veris Industries, Llc Configuration system for a power meter
CN109219892A (zh) * 2016-07-08 2019-01-15 住友化学株式会社 紫外线发光半导体器件及其制造方法
US11215650B2 (en) 2017-02-28 2022-01-04 Veris Industries, Llc Phase aligned branch energy meter
US11193958B2 (en) 2017-03-03 2021-12-07 Veris Industries, Llc Non-contact voltage sensor
US10705126B2 (en) 2017-05-19 2020-07-07 Veris Industries, Llc Energy metering with temperature monitoring
JP7218378B2 (ja) * 2018-02-19 2023-02-06 シグニファイ ホールディング ビー ヴィ ライトエンジンを備える封止デバイス
CN111176480A (zh) * 2019-12-06 2020-05-19 深圳市鸿合创新信息技术有限责任公司 一种触控显示屏及其制备方法、触控装置

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JPS5834681A (ja) * 1981-08-26 1983-03-01 Hitachi Ltd 固体撮像装置
DE3732075A1 (de) * 1987-09-23 1989-04-06 Siemens Ag Hermetisch dichtes glas-metallgehaeuse fuer halbleiterbauelemente und verfahren zu dessen herstellung
JP3242495B2 (ja) * 1993-07-01 2001-12-25 シャープ株式会社 多層膜フィルタ付き受光素子及びその製造方法
JP3168859B2 (ja) 1995-03-06 2001-05-21 日本ケミコン株式会社 Ｃｃｄモジュールの樹脂封止方法
DE19509262C2 (de) * 1995-03-15 2001-11-29 Siemens Ag Halbleiterbauelement mit Kunststoffumhüllung und Verfahren zu dessen Herstellung
US5962810A (en) 1997-09-09 1999-10-05 Amkor Technology, Inc. Integrated circuit package employing a transparent encapsulant
DE19755734A1 (de) 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
DE19803936A1 (de) * 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
DE19947044B9 (de) 1999-09-30 2007-09-13 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement mit Reflektor und Verfahren zur Herstellung desselben
DE10023353A1 (de) * 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
DE10024336A1 (de) 2000-05-17 2001-11-22 Heidenhain Gmbh Dr Johannes Bauelementanordnung und Verfahren zur Herstellung einer Bauelementanordnung

Also Published As

Publication number Publication date
EP1380056B2 (de) 2014-07-09
ATE363132T1 (de) 2007-06-15
DE50210203D1 (de) 2007-07-05
US6861683B2 (en) 2005-03-01
US20040150064A1 (en) 2004-08-05
EP1380056A2 (de) 2004-01-14
WO2002084746A2 (de) 2002-10-24
JP2004528713A (ja) 2004-09-16
EP1380056B1 (de) 2007-05-23
DE10118231A1 (de) 2002-10-17
WO2002084746A3 (de) 2003-10-30

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