JP4368633B2 - 製造装置 - Google Patents
製造装置 Download PDFInfo
- Publication number
- JP4368633B2 JP4368633B2 JP2003284342A JP2003284342A JP4368633B2 JP 4368633 B2 JP4368633 B2 JP 4368633B2 JP 2003284342 A JP2003284342 A JP 2003284342A JP 2003284342 A JP2003284342 A JP 2003284342A JP 4368633 B2 JP4368633 B2 JP 4368633B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chamber
- container
- source holder
- deposition source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 55
- 238000007740 vapor deposition Methods 0.000 claims description 267
- 239000000463 material Substances 0.000 claims description 144
- 239000000758 substrate Substances 0.000 claims description 135
- 230000015572 biosynthetic process Effects 0.000 claims description 81
- 238000012546 transfer Methods 0.000 claims description 65
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- 238000000151 deposition Methods 0.000 claims description 34
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- 230000008020 evaporation Effects 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 25
- 230000005525 hole transport Effects 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 11
- 239000002861 polymer material Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 238000002203 pretreatment Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 169
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- 239000012535 impurity Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
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- 239000011261 inert gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
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- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 MgAg Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- IZMLNVKXKFSCDB-UHFFFAOYSA-N oxoindium;oxotin Chemical compound [In]=O.[Sn]=O IZMLNVKXKFSCDB-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003190 poly( p-benzamide) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003284342A JP4368633B2 (ja) | 2002-08-01 | 2003-07-31 | 製造装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002224760 | 2002-08-01 | ||
| JP2003284342A JP4368633B2 (ja) | 2002-08-01 | 2003-07-31 | 製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004079528A JP2004079528A (ja) | 2004-03-11 |
| JP2004079528A5 JP2004079528A5 (enExample) | 2006-08-31 |
| JP4368633B2 true JP4368633B2 (ja) | 2009-11-18 |
Family
ID=32032806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003284342A Expired - Fee Related JP4368633B2 (ja) | 2002-08-01 | 2003-07-31 | 製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4368633B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4538650B2 (ja) * | 2004-06-18 | 2010-09-08 | 京セラ株式会社 | 蒸着装置 |
| JP4780983B2 (ja) * | 2005-03-17 | 2011-09-28 | 株式会社アルバック | 有機ｅｌ素子製造方法 |
| JP2012112037A (ja) * | 2010-11-04 | 2012-06-14 | Canon Inc | 成膜装置及びこれを用いた成膜方法 |
| CN102184934B (zh) * | 2011-04-02 | 2012-07-04 | 东莞宏威数码机械有限公司 | 掩膜板真空对位装置 |
| JP2018070896A (ja) * | 2015-01-14 | 2018-05-10 | 日東電工株式会社 | 有機蒸着膜の製造方法及び有機エレクトロルミネッセンス装置 |
| JP2017152330A (ja) * | 2016-02-26 | 2017-08-31 | 株式会社ジャパンディスプレイ | 表示装置の製造方法、表示装置及び表示装置の製造装置 |
| US10720633B2 (en) * | 2017-09-15 | 2020-07-21 | Dyson Technology Limited | Multilayer electrochemical device |
| JP2020007587A (ja) * | 2018-07-04 | 2020-01-16 | 株式会社アルバック | 蒸着装置、および、蒸着方法 |
| JP7224165B2 (ja) * | 2018-12-14 | 2023-02-17 | キヤノントッキ株式会社 | アライメント装置、蒸着装置、および、電子デバイスの製造装置 |
| US20220209214A1 (en) * | 2019-04-30 | 2022-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus for solid-state secondary battery and method for manufacturing solid-state secondary battery |
| JP7509809B2 (ja) * | 2022-01-28 | 2024-07-02 | キヤノントッキ株式会社 | 蒸発源ユニット、成膜装置及び成膜方法 |
-
2003
- 2003-07-31 JP JP2003284342A patent/JP4368633B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004079528A (ja) | 2004-03-11 |
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