JP4361434B2 - マスク及びマスクの作製方法、並びに、材料の加工方法 - Google Patents

マスク及びマスクの作製方法、並びに、材料の加工方法 Download PDF

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Publication number
JP4361434B2
JP4361434B2 JP2004210137A JP2004210137A JP4361434B2 JP 4361434 B2 JP4361434 B2 JP 4361434B2 JP 2004210137 A JP2004210137 A JP 2004210137A JP 2004210137 A JP2004210137 A JP 2004210137A JP 4361434 B2 JP4361434 B2 JP 4361434B2
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Japan
Prior art keywords
material layer
soft material
mask
mask pattern
forming
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Expired - Fee Related
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JP2004210137A
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English (en)
Japanese (ja)
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JP2005254441A5 (enExample
JP2005254441A (ja
Inventor
敦 大澤
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2004210137A priority Critical patent/JP4361434B2/ja
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Publication of JP2005254441A5 publication Critical patent/JP2005254441A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0015—Production of aperture devices, microporous systems or stamps

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Micromachines (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP2004210137A 2003-08-29 2004-07-16 マスク及びマスクの作製方法、並びに、材料の加工方法 Expired - Fee Related JP4361434B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004210137A JP4361434B2 (ja) 2003-08-29 2004-07-16 マスク及びマスクの作製方法、並びに、材料の加工方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003209764 2003-08-29
JP2004032956 2004-02-10
JP2004210137A JP4361434B2 (ja) 2003-08-29 2004-07-16 マスク及びマスクの作製方法、並びに、材料の加工方法

Publications (3)

Publication Number Publication Date
JP2005254441A JP2005254441A (ja) 2005-09-22
JP2005254441A5 JP2005254441A5 (enExample) 2007-04-12
JP4361434B2 true JP4361434B2 (ja) 2009-11-11

Family

ID=34106879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004210137A Expired - Fee Related JP4361434B2 (ja) 2003-08-29 2004-07-16 マスク及びマスクの作製方法、並びに、材料の加工方法

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Country Link
US (1) US7563382B2 (enExample)
EP (1) EP1510863A3 (enExample)
JP (1) JP4361434B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4690896B2 (ja) * 2006-01-10 2011-06-01 三菱重工業株式会社 ブラスト研磨用マスク、自動ブラスト研磨装置及び太陽電池パネルの製造方法
US7649666B2 (en) * 2006-12-07 2010-01-19 E Ink Corporation Components and methods for use in electro-optic displays
JP5850353B2 (ja) 2011-08-18 2016-02-03 アップル インコーポレイテッド 陽極酸化及びめっき表面処理
US9683305B2 (en) 2011-12-20 2017-06-20 Apple Inc. Metal surface and process for treating a metal surface
JP5856543B2 (ja) * 2012-06-27 2016-02-09 東京エレクトロン株式会社 エッチング方法
US9057272B2 (en) * 2012-06-29 2015-06-16 United Technologies Corporation Protective polishing mask
JP6146891B2 (ja) * 2012-10-19 2017-06-14 株式会社ミマキエンジニアリング サンドブラスト方法
WO2016113651A2 (en) * 2015-01-13 2016-07-21 Director General, Centre For Materials For Electronics Technology A non-conductive substrate with tracks formed by sand blasting
JP2017201668A (ja) * 2016-05-06 2017-11-09 豊田合成株式会社 半導体発光素子の製造方法
DE102019211858A1 (de) * 2019-08-07 2021-02-11 Audi Ag Verfahren zum Maskieren von zu mattierenden Oberflächen
WO2025225401A1 (ja) * 2024-04-23 2025-10-30 大日本印刷株式会社 メタルマスク及びその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018316B2 (ja) * 1977-08-09 1985-05-09 住友化学工業株式会社 サンドブラストによる模様づけのための基材貼りつけ用ステンシル
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
JPH0386479A (ja) * 1989-08-30 1991-04-11 Fuji Seisakusho:Kk サンドブラスト用マスキングシート
JPH0739235B2 (ja) * 1990-10-09 1995-05-01 アイセロ化学株式会社 レジストマスクによる画像彫食刻方法
JP3277002B2 (ja) 1991-10-14 2002-04-22 大日本印刷株式会社 プラズマディスプレイ基板の蛍光面形成方法
JPH06243789A (ja) 1993-02-15 1994-09-02 Dainippon Printing Co Ltd プラズマディスプレイパネル
JPH06251702A (ja) 1993-02-26 1994-09-09 Dainippon Printing Co Ltd プラズマディスプレイ基板の蛍光面形成方法
JPH0730226A (ja) * 1993-07-09 1995-01-31 Sumitomo Metal Ind Ltd メタル配線の形成方法
KR100343222B1 (ko) * 1995-01-28 2002-11-23 삼성에스디아이 주식회사 전계방출표시소자의제조방법
JPH10148927A (ja) * 1996-11-19 1998-06-02 Oki Electric Ind Co Ltd マスクパターン形成方法
US6140226A (en) * 1998-01-16 2000-10-31 International Business Machines Corporation Dual damascene processing for semiconductor chip interconnects
US6410453B1 (en) * 1999-09-02 2002-06-25 Micron Technology, Inc. Method of processing a substrate
US6470272B2 (en) * 2000-06-09 2002-10-22 Automotive Systems Laboratory, Inc. Situation awareness processor
US20030143472A1 (en) * 2002-01-24 2003-07-31 Yasuhiro Koizumi Manufacturing method of photomask
US7078334B1 (en) * 2002-06-06 2006-07-18 Cypress Semiconductor Corporation In situ hard mask approach for self-aligned contact etch

Also Published As

Publication number Publication date
US20050048416A1 (en) 2005-03-03
EP1510863A3 (en) 2007-04-18
JP2005254441A (ja) 2005-09-22
EP1510863A2 (en) 2005-03-02
US7563382B2 (en) 2009-07-21

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