JP4355201B2 - タングステン金属除去液及びそれを用いたタングステン金属の除去方法 - Google Patents

タングステン金属除去液及びそれを用いたタングステン金属の除去方法 Download PDF

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Publication number
JP4355201B2
JP4355201B2 JP2003403240A JP2003403240A JP4355201B2 JP 4355201 B2 JP4355201 B2 JP 4355201B2 JP 2003403240 A JP2003403240 A JP 2003403240A JP 2003403240 A JP2003403240 A JP 2003403240A JP 4355201 B2 JP4355201 B2 JP 4355201B2
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JP
Japan
Prior art keywords
tungsten metal
tungsten
acid
removal
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003403240A
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English (en)
Japanese (ja)
Other versions
JP2005166924A5 (enExample
JP2005166924A (ja
Inventor
寿和 清水
かおり 渡邉
秀充 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
NEC Electronics Corp
Original Assignee
Kanto Chemical Co Inc
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc, NEC Electronics Corp filed Critical Kanto Chemical Co Inc
Priority to JP2003403240A priority Critical patent/JP4355201B2/ja
Priority to TW093136900A priority patent/TW200519197A/zh
Priority to US11/001,684 priority patent/US7351354B2/en
Priority to KR1020040099712A priority patent/KR101135565B1/ko
Priority to CNB2004100978345A priority patent/CN100516303C/zh
Publication of JP2005166924A publication Critical patent/JP2005166924A/ja
Publication of JP2005166924A5 publication Critical patent/JP2005166924A5/ja
Application granted granted Critical
Publication of JP4355201B2 publication Critical patent/JP4355201B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H10P50/667—
    • H10P70/20—
    • H10P70/54—
    • H10P70/56—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2003403240A 2003-12-02 2003-12-02 タングステン金属除去液及びそれを用いたタングステン金属の除去方法 Expired - Lifetime JP4355201B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003403240A JP4355201B2 (ja) 2003-12-02 2003-12-02 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
TW093136900A TW200519197A (en) 2003-12-02 2004-11-30 Tungsten metal removing solution and method for removing tungsten metal by use thereof
US11/001,684 US7351354B2 (en) 2003-12-02 2004-12-01 Tungsten metal removing solution and method for removing tungsten metal by use thereof
KR1020040099712A KR101135565B1 (ko) 2003-12-02 2004-12-01 텅스텐 금속제거액 및 이를 이용한 텅스텐 금속의 제거방법
CNB2004100978345A CN100516303C (zh) 2003-12-02 2004-12-02 钨金属去除液以及使用了该去除液的钨金属的去除方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003403240A JP4355201B2 (ja) 2003-12-02 2003-12-02 タングステン金属除去液及びそれを用いたタングステン金属の除去方法

Publications (3)

Publication Number Publication Date
JP2005166924A JP2005166924A (ja) 2005-06-23
JP2005166924A5 JP2005166924A5 (enExample) 2007-01-25
JP4355201B2 true JP4355201B2 (ja) 2009-10-28

Family

ID=34726600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003403240A Expired - Lifetime JP4355201B2 (ja) 2003-12-02 2003-12-02 タングステン金属除去液及びそれを用いたタングステン金属の除去方法

Country Status (5)

Country Link
US (1) US7351354B2 (enExample)
JP (1) JP4355201B2 (enExample)
KR (1) KR101135565B1 (enExample)
CN (1) CN100516303C (enExample)
TW (1) TW200519197A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
CN103484864B (zh) * 2012-06-11 2016-04-27 北大方正集团有限公司 钨层去除溶液
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
JP6363724B2 (ja) 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
CN108130535B (zh) * 2016-12-01 2020-04-14 添鸿科技股份有限公司 钛钨合金的蚀刻液
JP6941959B2 (ja) * 2017-03-31 2021-09-29 関東化学株式会社 エッチング液組成物およびエッチング方法
TWI901664B (zh) 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
TW202208323A (zh) 2020-08-07 2022-03-01 日商德山股份有限公司 半導體晶圓用處理液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2681433B2 (ja) * 1992-09-30 1997-11-26 株式会社フロンテック エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法
US6232228B1 (en) * 1998-06-25 2001-05-15 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
KR100271769B1 (ko) * 1998-06-25 2001-02-01 윤종용 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
JP2002016053A (ja) * 2000-06-28 2002-01-18 Hitachi Ltd 半導体装置の製造方法
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
US7351354B2 (en) 2008-04-01
KR101135565B1 (ko) 2012-04-17
CN1626699A (zh) 2005-06-15
TW200519197A (en) 2005-06-16
CN100516303C (zh) 2009-07-22
US20050156140A1 (en) 2005-07-21
KR20050053330A (ko) 2005-06-08
JP2005166924A (ja) 2005-06-23

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