JP4353554B2 - レーザー光照射装置 - Google Patents
レーザー光照射装置 Download PDFInfo
- Publication number
- JP4353554B2 JP4353554B2 JP19296298A JP19296298A JP4353554B2 JP 4353554 B2 JP4353554 B2 JP 4353554B2 JP 19296298 A JP19296298 A JP 19296298A JP 19296298 A JP19296298 A JP 19296298A JP 4353554 B2 JP4353554 B2 JP 4353554B2
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- axis direction
- laser light
- slit
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000010355 oscillation Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Landscapes
- Laser Beam Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19296298A JP4353554B2 (ja) | 1998-07-08 | 1998-07-08 | レーザー光照射装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19296298A JP4353554B2 (ja) | 1998-07-08 | 1998-07-08 | レーザー光照射装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000031083A JP2000031083A (ja) | 2000-01-28 |
| JP2000031083A5 JP2000031083A5 (enExample) | 2005-10-27 |
| JP4353554B2 true JP4353554B2 (ja) | 2009-10-28 |
Family
ID=16299945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19296298A Expired - Fee Related JP4353554B2 (ja) | 1998-07-08 | 1998-07-08 | レーザー光照射装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4353554B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4515088B2 (ja) * | 2002-12-25 | 2010-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
1998
- 1998-07-08 JP JP19296298A patent/JP4353554B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000031083A (ja) | 2000-01-28 |
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