JP4346373B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4346373B2
JP4346373B2 JP2003276468A JP2003276468A JP4346373B2 JP 4346373 B2 JP4346373 B2 JP 4346373B2 JP 2003276468 A JP2003276468 A JP 2003276468A JP 2003276468 A JP2003276468 A JP 2003276468A JP 4346373 B2 JP4346373 B2 JP 4346373B2
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JP
Japan
Prior art keywords
voltage
circuit
data
current
internal
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Expired - Fee Related
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JP2003276468A
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English (en)
Japanese (ja)
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JP2004171730A (ja
JP2004171730A5 (enExample
Inventor
司 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2003276468A priority Critical patent/JP4346373B2/ja
Priority to US10/694,780 priority patent/US6940777B2/en
Publication of JP2004171730A publication Critical patent/JP2004171730A/ja
Publication of JP2004171730A5 publication Critical patent/JP2004171730A5/ja
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Publication of JP4346373B2 publication Critical patent/JP4346373B2/ja
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Expired - Fee Related legal-status Critical Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2003276468A 2002-10-31 2003-07-18 半導体装置 Expired - Fee Related JP4346373B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003276468A JP4346373B2 (ja) 2002-10-31 2003-07-18 半導体装置
US10/694,780 US6940777B2 (en) 2002-10-31 2003-10-29 Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002318078 2002-10-31
JP2003276468A JP4346373B2 (ja) 2002-10-31 2003-07-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2004171730A JP2004171730A (ja) 2004-06-17
JP2004171730A5 JP2004171730A5 (enExample) 2006-07-27
JP4346373B2 true JP4346373B2 (ja) 2009-10-21

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ID=32715857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003276468A Expired - Fee Related JP4346373B2 (ja) 2002-10-31 2003-07-18 半導体装置

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JP (1) JP4346373B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558548B1 (ko) * 2003-11-27 2006-03-10 삼성전자주식회사 상변화 메모리 소자에서의 라이트 드라이버 회로 및라이트 전류 인가방법
WO2006073176A1 (ja) 2005-01-06 2006-07-13 Nec Corporation 半導体集積回路装置
JP4328791B2 (ja) 2006-09-20 2009-09-09 エルピーダメモリ株式会社 被測定素子の特性測定方法及び半導体装置の特性管理システム
JP4901899B2 (ja) 2009-03-30 2012-03-21 株式会社東芝 磁気抵抗効果メモリ
US8139391B2 (en) * 2009-04-03 2012-03-20 Sandisk 3D Llc Multi-bit resistance-switching memory cell
US7978498B2 (en) * 2009-04-03 2011-07-12 Sandisk 3D, Llc Programming non-volatile storage element using current from other element
KR101047052B1 (ko) * 2009-05-28 2011-07-06 주식회사 하이닉스반도체 상변화 메모리 장치 및 이를 위한 테스트 회로
US8476917B2 (en) * 2010-01-29 2013-07-02 Freescale Semiconductor, Inc. Quiescent current (IDDQ) indication and testing apparatus and methods
KR20130050776A (ko) * 2011-11-08 2013-05-16 에스케이하이닉스 주식회사 반도체 장치와 반도체 장치를 포함하는 반도체 시스템 및 그 동작방법
JP5306487B2 (ja) * 2012-01-05 2013-10-02 株式会社東芝 磁気抵抗効果メモリ
KR102386205B1 (ko) * 2015-08-05 2022-04-13 삼성디스플레이 주식회사 어레이 테스트 장치 및 어레이 테스트 방법
US10347317B2 (en) 2017-10-05 2019-07-09 Gyrfalcon Technology Inc. Method of self-testing and reusing of reference cells in a memory architecture
CN119301466A (zh) * 2022-05-30 2025-01-10 日清纺微电子有限公司 电子电路及其检查方法

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Publication number Publication date
JP2004171730A (ja) 2004-06-17

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