JP4344631B2 - 有機物薄膜堆積用分子線源 - Google Patents

有機物薄膜堆積用分子線源 Download PDF

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Publication number
JP4344631B2
JP4344631B2 JP2004065318A JP2004065318A JP4344631B2 JP 4344631 B2 JP4344631 B2 JP 4344631B2 JP 2004065318 A JP2004065318 A JP 2004065318A JP 2004065318 A JP2004065318 A JP 2004065318A JP 4344631 B2 JP4344631 B2 JP 4344631B2
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JP
Japan
Prior art keywords
molecular
heater
thin film
guide
organic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004065318A
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English (en)
Japanese (ja)
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JP2005281710A (ja
JP2005281710A5 (enExample
Inventor
理 小林
裕康 庭山
建勇 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Choshu Industry Co Ltd
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Choshu Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Choshu Industry Co Ltd filed Critical Choshu Industry Co Ltd
Priority to JP2004065318A priority Critical patent/JP4344631B2/ja
Priority to US11/183,720 priority patent/US7369758B2/en
Publication of JP2005281710A publication Critical patent/JP2005281710A/ja
Publication of JP2005281710A5 publication Critical patent/JP2005281710A5/ja
Application granted granted Critical
Publication of JP4344631B2 publication Critical patent/JP4344631B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004065318A 2004-03-02 2004-03-09 有機物薄膜堆積用分子線源 Expired - Fee Related JP4344631B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004065318A JP4344631B2 (ja) 2004-03-02 2004-03-09 有機物薄膜堆積用分子線源
US11/183,720 US7369758B2 (en) 2004-03-02 2005-07-18 Molecular beam source for use in accumulation of organic thin-films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004057049 2004-03-02
JP2004065318A JP4344631B2 (ja) 2004-03-02 2004-03-09 有機物薄膜堆積用分子線源

Publications (3)

Publication Number Publication Date
JP2005281710A JP2005281710A (ja) 2005-10-13
JP2005281710A5 JP2005281710A5 (enExample) 2006-02-09
JP4344631B2 true JP4344631B2 (ja) 2009-10-14

Family

ID=35180433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004065318A Expired - Fee Related JP4344631B2 (ja) 2004-03-02 2004-03-09 有機物薄膜堆積用分子線源

Country Status (2)

Country Link
US (1) US7369758B2 (enExample)
JP (1) JP4344631B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100688969B1 (ko) * 2005-10-24 2007-03-08 삼성전자주식회사 표시장치용 기판의 제조장치 및 제조방법
GB0619160D0 (en) * 2006-09-28 2006-11-08 Oxford Instr Plasma Technology Valve assembly
FR2956411B1 (fr) * 2010-02-16 2012-04-06 Astron Fiamm Safety Systeme de chauffage d'une source de depot en phase vapeur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH654596A5 (de) * 1983-09-05 1986-02-28 Balzers Hochvakuum Verdampferzelle.
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
US5253266A (en) * 1992-07-20 1993-10-12 Intevac, Inc. MBE effusion source with asymmetrical heaters
US5820681A (en) 1995-05-03 1998-10-13 Chorus Corporation Unibody crucible and effusion cell employing such a crucible
JP2003002778A (ja) 2001-06-26 2003-01-08 International Manufacturing & Engineering Services Co Ltd 薄膜堆積用分子線セル
JP3684343B2 (ja) 2001-09-25 2005-08-17 株式会社日本ビーテック 薄膜堆積用分子線源セル
DE10211573A1 (de) * 2002-03-15 2003-10-16 Unaxis Balzers Ag Vakuumverdampfungseinrichtung

Also Published As

Publication number Publication date
US7369758B2 (en) 2008-05-06
US20050247267A1 (en) 2005-11-10
JP2005281710A (ja) 2005-10-13

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