JP4341630B2 - 固体撮像装置、固体撮像装置の駆動方法および撮像装置 - Google Patents
固体撮像装置、固体撮像装置の駆動方法および撮像装置 Download PDFInfo
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- JP4341630B2 JP4341630B2 JP2006019990A JP2006019990A JP4341630B2 JP 4341630 B2 JP4341630 B2 JP 4341630B2 JP 2006019990 A JP2006019990 A JP 2006019990A JP 2006019990 A JP2006019990 A JP 2006019990A JP 4341630 B2 JP4341630 B2 JP 4341630B2
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- 238000003384 imaging method Methods 0.000 title claims description 65
- 238000000034 method Methods 0.000 title claims description 12
- 230000003287 optical effect Effects 0.000 claims description 31
- 230000001174 ascending effect Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 102100021659 ER membrane protein complex subunit 10 Human genes 0.000 description 27
- 101000896290 Homo sapiens ER membrane protein complex subunit 10 Proteins 0.000 description 27
- 230000000875 corresponding effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 101000988287 Senecio vernalis Homospermidine synthase 2 Proteins 0.000 description 4
- 101100231549 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) HMO1 gene Proteins 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1562—Control of the image-sensor operation, e.g. image processing within the image-sensor for selective scanning, e.g. windowing, zooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
上記実施形態に係る固体撮像装置は、デジタルスチルカメラやビデオカメラ等の撮像装置において、その撮像デバイスとして用いて好適なものである。
Claims (6)
- 光電変換素子を含む画素が行列状に2次元配置されてなる画素アレイ部を有し、前記画素アレイ部の各画素から読み出した信号を複数列単位で並列に出力する固体撮像装置であって、
前記画素アレイ部の特定の領域から各画素の信号を読み出すウインドウ切り出しを行う制御手段と、
前記制御手段によって前記複数列単位をまたぐ列アドレス単位でウインドウ切り出しを行うときに、今回の列アドレス単位で画素から読み出された信号と前回の列アドレス単位で画素から読み出された信号とを保持し、この保持した今回の列アドレス単位および前回の列アドレス単位の各信号の中から前記複数列単位で連続する信号を選択して出力する選択手段と
を備えたことを特徴とする固体撮像装置。 - 前記選択手段は、前記画素アレイ部および前記制御手段と同じ半導体基板上に搭載されている
ことを特徴とする請求項1記載の固体撮像装置。 - 前記選択手段は、昇順方向走査および逆順方向走査のいずれの場合にも、前記画素アレイ部の画素配列に対して走査順に画素の信号を並列出力する
ことを特徴とする請求項1記載の固体撮像装置。 - 前記画素アレイ部内の遮光されたオプティカルブラック領域内の画素からの信号の読み出しであるか、前記オプティカルブラック領域外の画素からの信号の読み出しであるかを判別する判別手段を有し、
前記制御手段は、前記判別手段の判別結果を受けて前記ウインドウ切り出しを行う
ことを特徴とする請求項1記載の固体撮像装置。 - 光電変換素子を含む画素が行列状に2次元配置されてなる画素アレイ部を有し、前記画素アレイ部の各画素から読み出した信号を複数列単位で並列に出力する固体撮像装置の駆動方法であって、
前記画素アレイ部の特定の領域から各画素の信号を読み出すウインドウ切り出しを前記複数列単位をまたぐ列アドレス単位で行うときに、今回の列アドレス単位で画素から読み出された信号と前回の列アドレス単位で画素から読み出された信号とを保持し、この保持した今回の列アドレス単位および前回の列アドレス単位の各信号の中から前記複数列単位で連続する信号を選択して出力する
ことを特徴とする固体撮像装置の駆動方法。 - 光電変換素子を含む画素が行列状に2次元配置されてなる画素アレイ部を有し、前記画素アレイ部の各画素から読み出した信号を複数列単位で並列に出力する固体撮像装置と、
被写体からの光を前記固体撮像装置の撮像面上に導く光学系とを具備し、
前記固体撮像装置は、
前記画素アレイ部の特定の領域から各画素の信号を読み出すウインドウ切り出しを行う制御手段と、
前記制御手段によって前記複数列単位をまたぐ列アドレス単位でウインドウ切り出しを行うときに、今回の列アドレス単位で画素から読み出された信号と前回の列アドレス単位で画素から読み出された信号とを保持し、この保持した今回の列アドレス単位および前回の列アドレス単位の各信号の中から前記複数列単位で連続する信号を選択して出力する選択手段とを備えた
ことを特徴とする撮像装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006019990A JP4341630B2 (ja) | 2006-01-30 | 2006-01-30 | 固体撮像装置、固体撮像装置の駆動方法および撮像装置 |
TW096102689A TW200737952A (en) | 2006-01-30 | 2007-01-24 | Solid-state imaging apparatus, driving method of solid-state imaging apparatus and imaging apparatus |
KR1020070008868A KR101267666B1 (ko) | 2006-01-30 | 2007-01-29 | 고체 촬상 장치, 고체 촬상 장치의 구동 방법 및 촬상 장치 |
US11/668,643 US8072521B2 (en) | 2006-01-30 | 2007-01-30 | Solid-state imaging device, method for driving solid-state imaging device and imaging apparatus |
CNB200710128258XA CN100534154C (zh) | 2006-01-30 | 2007-01-30 | 固态成像器件、驱动固态成像器件的方法以及成像设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006019990A JP4341630B2 (ja) | 2006-01-30 | 2006-01-30 | 固体撮像装置、固体撮像装置の駆動方法および撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007201968A JP2007201968A (ja) | 2007-08-09 |
JP4341630B2 true JP4341630B2 (ja) | 2009-10-07 |
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JP2006019990A Expired - Fee Related JP4341630B2 (ja) | 2006-01-30 | 2006-01-30 | 固体撮像装置、固体撮像装置の駆動方法および撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8072521B2 (ja) |
JP (1) | JP4341630B2 (ja) |
KR (1) | KR101267666B1 (ja) |
CN (1) | CN100534154C (ja) |
TW (1) | TW200737952A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100530257B1 (ko) * | 2005-04-26 | 2005-11-22 | 엠텍비젼 주식회사 | 이미지 센서에서의 암 전류에 의한 노이즈 제거 방법 및장치 |
JP5163184B2 (ja) * | 2008-02-29 | 2013-03-13 | ソニー株式会社 | データ走査回路、固体撮像素子、およびカメラシステム |
JP5374110B2 (ja) * | 2008-10-22 | 2013-12-25 | キヤノン株式会社 | 撮像センサ及び撮像装置 |
JP5001970B2 (ja) * | 2009-03-30 | 2012-08-15 | 浜松ホトニクス株式会社 | 固体撮像装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3696250A (en) * | 1970-09-17 | 1972-10-03 | Rca Corp | Signal transfer system for panel type image sensor |
EP0282993B1 (en) * | 1987-03-20 | 1994-02-02 | Canon Kabushiki Kaisha | Imaging apparatus |
US6466265B1 (en) | 1998-06-22 | 2002-10-15 | Eastman Kodak Company | Parallel output architectures for CMOS active pixel sensors |
JP2001186419A (ja) * | 1999-12-24 | 2001-07-06 | Nec Corp | イメージセンサ及び画素読出し方法 |
JP2002165136A (ja) * | 2000-11-29 | 2002-06-07 | Canon Inc | 撮像装置及び撮像システム |
JP3972645B2 (ja) * | 2001-12-12 | 2007-09-05 | 日本ビクター株式会社 | 固体撮像素子 |
CN100470676C (zh) * | 2003-06-06 | 2009-03-18 | 富士通株式会社 | 半导体存储装置以及半导体存储装置的位线选择方法 |
JP4144535B2 (ja) * | 2004-03-03 | 2008-09-03 | ソニー株式会社 | 固体撮像装置、画素信号読出方法 |
JP2005333265A (ja) * | 2004-05-18 | 2005-12-02 | Olympus Corp | 固体撮像素子および装置 |
-
2006
- 2006-01-30 JP JP2006019990A patent/JP4341630B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-24 TW TW096102689A patent/TW200737952A/zh unknown
- 2007-01-29 KR KR1020070008868A patent/KR101267666B1/ko not_active IP Right Cessation
- 2007-01-30 CN CNB200710128258XA patent/CN100534154C/zh not_active Expired - Fee Related
- 2007-01-30 US US11/668,643 patent/US8072521B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007201968A (ja) | 2007-08-09 |
US20080055442A1 (en) | 2008-03-06 |
CN100534154C (zh) | 2009-08-26 |
US8072521B2 (en) | 2011-12-06 |
CN101079968A (zh) | 2007-11-28 |
TW200737952A (en) | 2007-10-01 |
KR101267666B1 (ko) | 2013-05-23 |
KR20070078803A (ko) | 2007-08-02 |
TWI333374B (ja) | 2010-11-11 |
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