JP4339005B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4339005B2 JP4339005B2 JP2003101633A JP2003101633A JP4339005B2 JP 4339005 B2 JP4339005 B2 JP 4339005B2 JP 2003101633 A JP2003101633 A JP 2003101633A JP 2003101633 A JP2003101633 A JP 2003101633A JP 4339005 B2 JP4339005 B2 JP 4339005B2
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- Prior art keywords
- resist
- film
- resist pattern
- gate electrode
- region
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- 238000001312 dry etching Methods 0.000 claims description 66
- 230000009477 glass transition Effects 0.000 claims description 51
- 238000011161 development Methods 0.000 claims description 36
- 239000003795 chemical substances by application Substances 0.000 claims description 25
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- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 7
- 229910052721 tungsten Inorganic materials 0.000 claims 7
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 3
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- 229910000073 phosphorus hydride Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 8
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000007725 thermal activation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
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- 238000009501 film coating Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
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- -1 hydrogen ions Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Liquid Crystal (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003101633A JP4339005B2 (ja) | 2002-04-04 | 2003-04-04 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102178 | 2002-04-04 | ||
| JP2003101633A JP4339005B2 (ja) | 2002-04-04 | 2003-04-04 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006788A JP2004006788A (ja) | 2004-01-08 |
| JP2004006788A5 JP2004006788A5 (enExample) | 2006-04-20 |
| JP4339005B2 true JP4339005B2 (ja) | 2009-10-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003101633A Expired - Fee Related JP4339005B2 (ja) | 2002-04-04 | 2003-04-04 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4339005B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7875419B2 (en) | 2002-10-29 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing resist pattern and method for manufacturing semiconductor device |
| JP4611690B2 (ja) * | 2004-09-03 | 2011-01-12 | 東京応化工業株式会社 | レジストパターンの形成方法ならびにこれを用いた微細パターンの形成方法および液晶表示素子の製造方法 |
| US7807516B2 (en) | 2005-06-30 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP5137342B2 (ja) * | 2005-06-30 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2008085231A (ja) * | 2006-09-28 | 2008-04-10 | Sharp Manufacturing System Corp | 基板上の残留有機物除去方法 |
| KR102080065B1 (ko) * | 2013-04-30 | 2020-04-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| US10755926B2 (en) * | 2017-11-20 | 2020-08-25 | International Business Machines Corporation | Patterning directly on an amorphous silicon hardmask |
| JP2023136042A (ja) * | 2022-03-16 | 2023-09-29 | 日本放送協会 | 塗布型金属酸化物前駆体溶液、金属酸化物薄膜、薄膜トランジスタ、及び金属酸化物薄膜の製造方法 |
-
2003
- 2003-04-04 JP JP2003101633A patent/JP4339005B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004006788A (ja) | 2004-01-08 |
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