JP4335451B2 - 埋込みリッジｉｉ−ｖｉ半導体発光デバイス - Google Patents

埋込みリッジｉｉ−ｖｉ半導体発光デバイス Download PDF

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Publication number
JP4335451B2
JP4335451B2 JP2000556531A JP2000556531A JP4335451B2 JP 4335451 B2 JP4335451 B2 JP 4335451B2 JP 2000556531 A JP2000556531 A JP 2000556531A JP 2000556531 A JP2000556531 A JP 2000556531A JP 4335451 B2 JP4335451 B2 JP 4335451B2
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Japan
Prior art keywords
layer
light emitting
deposited
semiconductor
light
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Expired - Fee Related
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JP2000556531A
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English (en)
Japanese (ja)
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JP2002519855A5 (enExample
JP2002519855A (ja
Inventor
エー． ハーセ，マイケル
エフ． ボード，ポール
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3M Co
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3M Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2000556531A 1997-08-25 1998-07-20 埋込みリッジｉｉ−ｖｉ半導体発光デバイス Expired - Fee Related JP4335451B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/920,179 US5963573A (en) 1997-08-25 1997-08-25 Light absorbing layer for II-VI semiconductor light emitting devices
US08/920,179 1997-08-25
PCT/US1998/014973 WO1999010956A1 (en) 1997-08-25 1998-07-20 Light absorbing layer for ii-vi semiconductor light emitting devices

Publications (3)

Publication Number Publication Date
JP2002519855A JP2002519855A (ja) 2002-07-02
JP2002519855A5 JP2002519855A5 (enExample) 2006-01-05
JP4335451B2 true JP4335451B2 (ja) 2009-09-30

Family

ID=25443299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000556531A Expired - Fee Related JP4335451B2 (ja) 1997-08-25 1998-07-20 埋込みリッジｉｉ−ｖｉ半導体発光デバイス

Country Status (9)

Country Link
US (1) US5963573A (enExample)
EP (1) EP1008213B1 (enExample)
JP (1) JP4335451B2 (enExample)
KR (1) KR100601116B1 (enExample)
CN (1) CN1114980C (enExample)
AU (1) AU8575798A (enExample)
DE (1) DE69839560D1 (enExample)
MY (1) MY117926A (enExample)
WO (1) WO1999010956A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3925753B2 (ja) * 1997-10-24 2007-06-06 ソニー株式会社 半導体素子およびその製造方法ならびに半導体発光素子
JP4147602B2 (ja) * 1998-02-02 2008-09-10 ソニー株式会社 自励発振型半導体レーザ
DE19963807A1 (de) * 1999-12-30 2001-07-19 Osram Opto Semiconductors Gmbh Streifenlaserdiodenelement
US6832034B2 (en) * 2002-06-21 2004-12-14 3M Innovative Properties Company Optical waveguide
JP2004296461A (ja) * 2003-03-25 2004-10-21 Sharp Corp 酸化物半導体発光素子
JP3857294B2 (ja) * 2004-11-11 2006-12-13 三菱電機株式会社 半導体レーザ
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102012109175B4 (de) 2012-09-27 2019-02-28 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US5396103A (en) * 1991-05-15 1995-03-07 Minnesota Mining And Manufacturing Company Graded composition ohmic contact for P-type II-VI semiconductors
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
US5274269A (en) * 1991-05-15 1993-12-28 Minnesota Mining And Manufacturing Company Ohmic contact for p-type group II-IV compound semiconductors
US5213998A (en) * 1991-05-15 1993-05-25 Minnesota Mining And Manufacturing Company Method for making an ohmic contact for p-type group II-VI compound semiconductors
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding
RU94046132A (ru) * 1992-05-22 1996-09-27 Миннесота Майнинг энд Мануфакчуринг Компани (US) Способ управления системой молекулярной пучковой эпитаксии /mbe/ во время изготовления электролюминисцентного прибора на полупроводниковом ii-yi соединении и ii-yi лазерные диоды
JP2809978B2 (ja) * 1993-10-20 1998-10-15 株式会社東芝 半導体レ−ザ素子
US5488233A (en) * 1993-03-11 1996-01-30 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with compound semiconductor layer
JPH077183A (ja) * 1993-06-17 1995-01-10 Rohm Co Ltd 半導体発光装置及びその製造方法
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
US5742629A (en) * 1995-07-21 1998-04-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and production method thereof

Also Published As

Publication number Publication date
JP2002519855A (ja) 2002-07-02
CN1114980C (zh) 2003-07-16
WO1999010956A1 (en) 1999-03-04
DE69839560D1 (de) 2008-07-10
EP1008213A1 (en) 2000-06-14
EP1008213B1 (en) 2008-05-28
AU8575798A (en) 1999-03-16
KR100601116B1 (ko) 2006-07-19
MY117926A (en) 2004-08-30
US5963573A (en) 1999-10-05
KR20010023219A (ko) 2001-03-26
CN1268256A (zh) 2000-09-27

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