JP4329177B2 - Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法 - Google Patents

Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法 Download PDF

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Publication number
JP4329177B2
JP4329177B2 JP23139499A JP23139499A JP4329177B2 JP 4329177 B2 JP4329177 B2 JP 4329177B2 JP 23139499 A JP23139499 A JP 23139499A JP 23139499 A JP23139499 A JP 23139499A JP 4329177 B2 JP4329177 B2 JP 4329177B2
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ray
optical element
plasma
blocking member
particle blocking
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JP23139499A
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Japanese (ja)
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JP2001057298A5 (enrdf_load_stackoverflow
JP2001057298A (ja
Inventor
典明 神高
洋行 近藤
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides

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  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP23139499A 1999-08-18 1999-08-18 Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法 Expired - Lifetime JP4329177B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23139499A JP4329177B2 (ja) 1999-08-18 1999-08-18 Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23139499A JP4329177B2 (ja) 1999-08-18 1999-08-18 Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法

Publications (3)

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JP2001057298A JP2001057298A (ja) 2001-02-27
JP2001057298A5 JP2001057298A5 (enrdf_load_stackoverflow) 2006-07-27
JP4329177B2 true JP4329177B2 (ja) 2009-09-09

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JP23139499A Expired - Lifetime JP4329177B2 (ja) 1999-08-18 1999-08-18 Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158959B2 (en) 2009-02-12 2012-04-17 Gigaphoton Inc. Extreme ultraviolet light source apparatus

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3101613B2 (ja) 1998-01-30 2000-10-23 キヤノン株式会社 照明光学装置及び投影露光装置
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
TWI230847B (en) 2002-12-23 2005-04-11 Asml Netherlands Bv Contamination barrier with expandable lamellas
JP4340851B2 (ja) * 2003-04-09 2009-10-07 株式会社ニコン 光源ユニット、照明光学装置、露光装置および露光方法
SG118268A1 (en) * 2003-06-27 2006-01-27 Asml Netherlands Bv Laser produced plasma radiation system with foil trap
US7087914B2 (en) * 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
SG123767A1 (en) 2004-12-28 2006-07-26 Asml Netherlands Bv Lithographic apparatus, illumination system and filter system
SG123770A1 (en) 2004-12-28 2006-07-26 Asml Netherlands Bv Lithographic apparatus, radiation system and filt er system
US7485881B2 (en) 2004-12-29 2009-02-03 Asml Netherlands B.V. Lithographic apparatus, illumination system, filter system and method for cooling a support of such a filter system
DE102005015274B4 (de) * 2005-03-31 2012-02-23 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung kurzwelliger Strahlung
US7397056B2 (en) 2005-07-06 2008-07-08 Asml Netherlands B.V. Lithographic apparatus, contaminant trap, and device manufacturing method
US20070115443A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7332731B2 (en) 2005-12-06 2008-02-19 Asml Netherlands, B.V. Radiation system and lithographic apparatus
US7468521B2 (en) 2005-12-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7453071B2 (en) 2006-03-29 2008-11-18 Asml Netherlands B.V. Contamination barrier and lithographic apparatus comprising same
JP4850558B2 (ja) * 2006-03-31 2012-01-11 キヤノン株式会社 光源装置、及びそれを用いた露光装置、デバイス製造方法
US7442948B2 (en) 2006-05-15 2008-10-28 Asml Netherlands B.V. Contamination barrier and lithographic apparatus
US7839482B2 (en) * 2007-05-21 2010-11-23 Asml Netherlands B.V. Assembly comprising a radiation source, a reflector and a contaminant barrier
JP4725814B2 (ja) * 2008-11-20 2011-07-13 株式会社ニコン 光源ユニット、照明光学装置、露光装置および露光方法
JP5355115B2 (ja) * 2009-01-30 2013-11-27 株式会社東芝 極端紫外光光源装置及びその調整方法
US9544984B2 (en) * 2013-07-22 2017-01-10 Kla-Tencor Corporation System and method for generation of extreme ultraviolet light
JP6036785B2 (ja) * 2014-10-15 2016-11-30 ウシオ電機株式会社 ホイルトラップ及びマスク検査用極端紫外光光源装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158959B2 (en) 2009-02-12 2012-04-17 Gigaphoton Inc. Extreme ultraviolet light source apparatus
US8586954B2 (en) 2009-02-12 2013-11-19 Gigaphoton Inc. Extreme ultraviolet light source apparatus
US8901524B2 (en) 2009-02-12 2014-12-02 Gigaphoton Inc. Extreme ultraviolet light source apparatus

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JP2001057298A (ja) 2001-02-27

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