JP4329002B2 - トリ・トーン減衰位相シフト・マスクにおける近接効果を補正するための方法 - Google Patents
トリ・トーン減衰位相シフト・マスクにおける近接効果を補正するための方法 Download PDFInfo
- Publication number
- JP4329002B2 JP4329002B2 JP2002551649A JP2002551649A JP4329002B2 JP 4329002 B2 JP4329002 B2 JP 4329002B2 JP 2002551649 A JP2002551649 A JP 2002551649A JP 2002551649 A JP2002551649 A JP 2002551649A JP 4329002 B2 JP4329002 B2 JP 4329002B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- opaque
- phase shift
- correction
- boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000010363 phase shift Effects 0.000 title claims description 89
- 230000002238 attenuated effect Effects 0.000 title claims description 71
- 230000000694 effects Effects 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 37
- 238000012937 correction Methods 0.000 claims description 53
- 230000003287 optical effect Effects 0.000 claims description 53
- 238000002224 dissection Methods 0.000 claims description 26
- 238000007639 printing Methods 0.000 claims description 11
- 238000013016 damping Methods 0.000 claims description 8
- 230000000717 retained effect Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 21
- 238000013461 design Methods 0.000 description 8
- 241000251131 Sphyrna Species 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 241000571940 Dracula Species 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
上述の実施例は、本発明を例示を目的としたものであり、制限を意図したものではない。これらの実施例の修正実施例、代替実施例及び変形実施例は、当業者には明らかであろう。例えば、本発明に従って製造されたマスクは、光リソグラフィだけでなく、硬いX線(特有の波長が約1ナノメータであり、このマスクは透過モードで用いられる)若しくは軟らかいX線(特有の波長が約10ナノメータであるEUV、若しく極紫外線はとしても知られており、マスクは反射モードで用いられる)等の他の種類の照射法に基づくリソグラフィでも同様に用いられてよい(高さの差異若しくは材料の構成要素の差異のいずれかによる、部分的な反射材によっても、同様に、光の位相が180度シフトされ得ることに留意されたい)。
Claims (11)
- トリ・トーン減衰位相シフト・マスク内で複数の構造を形成するための方法であって、前記構造のサブセットが、透明領域及び減衰領域によって形成され、前記透明領域が前記減衰領域に対して180度の位相シフトを備えている、該方法が、
前記減衰領域に対する境界内部に不透明領域を配置するステップであって、それにより、関連付けされている幅を備えた、前記減衰領域のリムが形成され、前記不透明領域によって前記減衰領域のプリンティングが防止される、配置ステップと、
前記減衰領域に対する前記境界を、各々が2つのディセクション点を含んでいる複数の第1セグメントに分割するステップと、
前記ディセクション点のサブセットを前記不透明領域に対する境界上に投影し、それにより、複数の第2セグメントを形成するステップと、
構造の前記サブセット上で光学的な近接効果の補正を実行するステップであって、前記の光学的な近接効果の補正によって第1セグメントが移動される場合に、対応する第2セグメントを移動させるステップと、
構造の前記サブセット内の少なくとも1つの種類の全構造の前記リムに対して、概ね同一である所定のリム幅を提供するステップとより成り、前記概ね同一である所定のリム幅を提供するステップが、前記光学的な近接効果の補正の後に形成された修正減衰領域に基づいて、前記不透明領域に対する修正境界を決定するステップを含んでいることを特徴とする方法。 - 前記不透明領域に対する前記修正境界を決定するステップは、前記修正減衰領域をダウンサイジングして、次に、前記ダウンサイジングされた減衰領域をアップサイジングするステップを含んでいることを特徴とする請求項1に記載の方法。
- 前記不透明領域に対する前記修正境界を決定するステップが、前記修正減衰領域を前記所定リム幅でN回ダウンサイジングして、次に、前記ダウンサイジングされた減衰領域を前記所定リム幅でM回アップサイジングするステップを含んでいて、N>Mであることを特徴とする請求項2に記載の方法。
- ダウンサイジング及びアップサイジングするステップが、光学的な近接効果の補正の機能であることを特徴とする請求項2に記載の方法。
- 前記不透明領域に対する前記修正境界を決定するステップが、任意の内部サイド・ローブ・プリンティングを最小化させるべく前記修正境界を調整するステップを含んでいることを特徴とする請求項1に記載の方法。
- 前記不透明領域に対する境界が保持される一方で、前記光学的な近接効果の補正によって、少なくとも1つの第1セグメントが移動されることを特徴とする請求項1に記載の方法。
- 所定のリム幅を提供するステップが、前記光学的な近接効果の補正の後に形成された修正減衰領域に基づいて前記不透明領域に対する修正境界を決定するステップを含んでいることを特徴とする請求項6に記載の方法。
- 前記不透明領域に対する前記修正境界を決定するステップが、前記修正減衰領域をダウンサイジングして、次に、前記ダウンサイジングされた減衰領域をアップサイジングするステップを含んでいることを特徴とする請求項7に記載の方法。
- 前記不透明領域に対する前記修正境界を決定するステップが、前記修正減衰領域を前記所定リム幅でN回ダウンサイジングして、次に、前記ダウンサイジングされた減衰領域を前記所定リム幅でM回アップサイジングするステップを含んでいて、N>Mであることを特徴とする請求項8に記載の方法。
- ダウンサイジング及びアップサイジングするステップが、光学的な近接効果の補正の機能であることを特徴とする請求項8に記載の方法。
- 前記不透明領域に対する前記修正境界を決定するステップが、任意の内部サイド・ローブ・プリンティングを最小化させるべく前記修正境界を調整するステップを含んでいることを特徴とする請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/746,369 US6653026B2 (en) | 2000-12-20 | 2000-12-20 | Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask |
PCT/US2001/047687 WO2002050614A2 (en) | 2000-12-20 | 2001-11-30 | Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004521376A JP2004521376A (ja) | 2004-07-15 |
JP4329002B2 true JP4329002B2 (ja) | 2009-09-09 |
Family
ID=25000544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002551649A Expired - Lifetime JP4329002B2 (ja) | 2000-12-20 | 2001-11-30 | トリ・トーン減衰位相シフト・マスクにおける近接効果を補正するための方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6653026B2 (ja) |
EP (3) | EP2177949B1 (ja) |
JP (1) | JP4329002B2 (ja) |
CN (1) | CN100363838C (ja) |
AU (1) | AU2002230726A1 (ja) |
DE (1) | DE60142078D1 (ja) |
WO (1) | WO2002050614A2 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551750B2 (en) | 2001-03-16 | 2003-04-22 | Numerical Technologies, Inc. | Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks |
US6601231B2 (en) * | 2001-07-10 | 2003-07-29 | Lacour Patrick Joseph | Space classification for resolution enhancement techniques |
US6670082B2 (en) * | 2001-10-09 | 2003-12-30 | Numerical Technologies, Inc. | System and method for correcting 3D effects in an alternating phase-shifting mask |
GB0215243D0 (en) * | 2002-07-02 | 2002-08-14 | Koninkl Philips Electronics Nv | Mask and manufacturing method using mask |
US6813759B2 (en) * | 2002-09-09 | 2004-11-02 | Numerical Technologies, Inc. | Hybrid optical proximity correction for alternating aperture phase shifting designs |
US6808850B2 (en) * | 2002-10-21 | 2004-10-26 | Numerical Technologies, Inc. | Performing optical proximity correction on trim-level segments not abutting features to be printed |
US6854104B2 (en) * | 2002-11-27 | 2005-02-08 | Lsi Logic Corporation | First approximation for OPC significant speed-up |
US7131100B2 (en) * | 2002-12-10 | 2006-10-31 | Synopsys Inc. | Identifying phantom images generated by side-lobes |
US7005218B2 (en) * | 2003-04-29 | 2006-02-28 | Synopsys, Inc. | Method and apparatus for performing target-image-based optical proximity correction |
CN100380231C (zh) * | 2003-08-28 | 2008-04-09 | 力晶半导体股份有限公司 | 光学光刻方法 |
US7909396B2 (en) * | 2004-01-08 | 2011-03-22 | Audiovox Corporation | Automobile entertainment system |
US7861207B2 (en) * | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
US7487490B2 (en) * | 2004-03-30 | 2009-02-03 | Youping Zhang | System for simplifying layout processing |
US7435533B2 (en) | 2004-06-14 | 2008-10-14 | Photronics, Inc. | Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases |
US7396617B2 (en) | 2004-06-14 | 2008-07-08 | Photronics, Inc. | Photomask reticle having multiple versions of the same mask pattern with different biases |
US7260812B2 (en) * | 2004-08-02 | 2007-08-21 | Synopsys, Inc | Method and apparatus for expediting convergence in model-based OPC |
US7556891B2 (en) * | 2004-10-25 | 2009-07-07 | Chartered Semiconductor Manufacturing Ltd. | Method and apparatus for contact hole unit cell formation |
US7271107B2 (en) * | 2005-02-03 | 2007-09-18 | Lam Research Corporation | Reduction of feature critical dimensions using multiple masks |
DE602006002044D1 (de) * | 2005-02-23 | 2008-09-18 | Asml Masktools Bv | Methode und Apparat zur Optimierung der Beleuchtung einer Schicht eines vollständigen Chips |
US7539969B2 (en) * | 2005-05-10 | 2009-05-26 | Lam Research Corporation | Computer readable mask shrink control processor |
US7465525B2 (en) * | 2005-05-10 | 2008-12-16 | Lam Research Corporation | Reticle alignment and overlay for multiple reticle process |
US7271108B2 (en) * | 2005-06-28 | 2007-09-18 | Lam Research Corporation | Multiple mask process with etch mask stack |
JP2008052221A (ja) * | 2006-08-28 | 2008-03-06 | Toshiba Corp | パターン生成方法及びプログラム |
US7934177B2 (en) * | 2007-02-06 | 2011-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for a pattern layout split |
JP2008300420A (ja) * | 2007-05-29 | 2008-12-11 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
US7818710B2 (en) * | 2007-07-03 | 2010-10-19 | Micron Technology, Inc. | Method and system for lithographic simulation and verification |
JP2009139632A (ja) * | 2007-12-06 | 2009-06-25 | Elpida Memory Inc | マスクパターン補正方法及び露光用マスク |
US7795104B2 (en) | 2008-02-13 | 2010-09-14 | Chartered Semiconductor Manufacturing Ltd. | Method for fabricating device structures having a variation in electrical conductivity |
US9005848B2 (en) * | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
CN101923278B (zh) * | 2009-06-17 | 2012-01-04 | 复旦大学 | 一种光刻工艺中移相掩模版的建模方法 |
US9005849B2 (en) * | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
JP5465502B2 (ja) * | 2009-09-29 | 2014-04-09 | 株式会社アルバック | フォトマスク、フォトマスク製造方法 |
CN102385242A (zh) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | 掩膜版制作方法及系统 |
KR101439082B1 (ko) * | 2013-05-27 | 2014-09-12 | 한국과학기술원 | 웨이퍼 레벨 패키지용 캡핑 웨이퍼의 제조를 위한 포토마스크 및 이를 이용한 웨이퍼 레벨 패키지용 캡핑 웨이퍼의 제조 방법 |
CN115346861A (zh) * | 2021-05-14 | 2022-11-15 | 联华电子股份有限公司 | 半导体掩模图案的修正方法及其半导体结构 |
Family Cites Families (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1523165A (en) | 1974-08-03 | 1978-08-31 | Matsushita Electric Ind Co Ltd | Fourier-transform holography by pseudo-random phase shifting |
US6007324A (en) | 1977-10-23 | 1999-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double layer method for fabricating a rim type attenuating phase shifting mask |
US4231811A (en) | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
DE3067832D1 (en) | 1980-07-10 | 1984-06-20 | Ibm | Process for compensating the proximity effect in electron beam projection devices |
US4456371A (en) | 1982-06-30 | 1984-06-26 | International Business Machines Corporation | Optical projection printing threshold leveling arrangement |
JPH0690505B2 (ja) | 1985-09-20 | 1994-11-14 | 株式会社日立製作所 | ホトマスク |
US4890309A (en) | 1987-02-25 | 1989-12-26 | Massachusetts Institute Of Technology | Lithography mask with a π-phase shifting attenuator |
US4812962A (en) | 1987-04-09 | 1989-03-14 | Harris Corp. | Area feature sorting mechanism for neighborhood-based proximity correction in lithography processing of integrated circuit patterns |
US4895780A (en) | 1987-05-13 | 1990-01-23 | General Electric Company | Adjustable windage method and mask for correction of proximity effect in submicron photolithography |
US4902899A (en) | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
JP2650962B2 (ja) | 1988-05-11 | 1997-09-10 | 株式会社日立製作所 | 露光方法及び素子の形成方法並びに半導体素子の製造方法 |
JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
US5182718A (en) | 1989-04-04 | 1993-01-26 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light |
JP2830330B2 (ja) | 1989-04-04 | 1998-12-02 | 松下電器産業株式会社 | 近接効果補正方法 |
EP0653679B1 (en) | 1989-04-28 | 2002-08-21 | Fujitsu Limited | Mask, mask producing method and pattern forming method using mask |
US5328807A (en) | 1990-06-11 | 1994-07-12 | Hitichi, Ltd. | Method of forming a pattern |
EP0464492B1 (en) | 1990-06-21 | 1999-08-04 | Matsushita Electronics Corporation | A photomask used by photolithography and a process of producing the same |
US5051598A (en) | 1990-09-12 | 1991-09-24 | International Business Machines Corporation | Method for correcting proximity effects in electron beam lithography |
IL97022A0 (en) | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
US5208124A (en) | 1991-03-19 | 1993-05-04 | Hewlett-Packard Company | Method of making a mask for proximity effect correction in projection lithography |
JP2974821B2 (ja) | 1991-06-19 | 1999-11-10 | 沖電気工業株式会社 | パターン形成方法 |
KR100256619B1 (ko) | 1991-07-12 | 2000-06-01 | 사와무라 시코 | 포토마스크 및 그것을 사용한 레지시트 패턴 형성방법 |
US5364716A (en) | 1991-09-27 | 1994-11-15 | Fujitsu Limited | Pattern exposing method using phase shift and mask used therefor |
JPH05197128A (ja) | 1991-10-01 | 1993-08-06 | Oki Electric Ind Co Ltd | ホトマスク及びそれを用いたパターン形成方法 |
US5334542A (en) | 1991-11-27 | 1994-08-02 | Oki Electric Industry Co., Ltd. | Method of forming T-shaped electrode |
US5242770A (en) | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
JP3495734B2 (ja) | 1992-04-06 | 2004-02-09 | アスムル マスクツールズ ビー.ブイ. | 半導体デバイス製造プロセスでのリソグラフィーパタン形成方法 |
US5288569A (en) | 1992-04-23 | 1994-02-22 | International Business Machines Corporation | Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging |
US5308741A (en) | 1992-07-31 | 1994-05-03 | Motorola, Inc. | Lithographic method using double exposure techniques, mask position shifting and light phase shifting |
US5256505A (en) | 1992-08-21 | 1993-10-26 | Microunity Systems Engineering | Lithographical mask for controlling the dimensions of resist patterns |
US5302477A (en) | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
US5538815A (en) | 1992-09-14 | 1996-07-23 | Kabushiki Kaisha Toshiba | Method for designing phase-shifting masks with automatization capability |
US5527645A (en) | 1993-04-21 | 1996-06-18 | Pati; Yagyensh C. | Systematic method for production of phase-shifting photolithographic masks |
JPH07111528A (ja) | 1993-10-12 | 1995-04-25 | Matsushita Electric Ind Co Ltd | 留守番電話装置 |
US6007310A (en) | 1993-11-23 | 1999-12-28 | Sarcos, Lc | Volumetric pump with sterility seal |
US5424154A (en) | 1993-12-10 | 1995-06-13 | Intel Corporation | Lithographic emhancement method and apparatus for randomly spaced structures |
JP3393926B2 (ja) | 1993-12-28 | 2003-04-07 | 株式会社東芝 | フォトマスク設計方法及びその装置 |
US5447810A (en) | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
DE69500268T2 (de) | 1994-02-14 | 1997-10-30 | Ibm | Dämpfende Phasenverschiebungsmaske und Herstellungsverfahren |
KR950027933A (ko) * | 1994-03-21 | 1995-10-18 | 김주용 | 위상반전 마스크 |
US5636002A (en) | 1994-04-29 | 1997-06-03 | Lucent Technologies Inc. | Auxiliary mask features for enhancing the resolution of photolithography |
US5539567A (en) | 1994-06-16 | 1996-07-23 | Texas Instruments Incorporated | Photolithographic technique and illuminator using real-time addressable phase shift light shift |
KR0163471B1 (ko) | 1994-07-05 | 1998-12-15 | 가네꼬 히사시 | 수정된 조명에 이용되는 포토-마스크 제조 방법, 포토-마스크를 이용하는 투영 정렬기 및 포토-마스크로부터 감광층으로 패턴상을 전사하는 방법 |
US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
US5538833A (en) | 1994-08-03 | 1996-07-23 | International Business Machines Corporation | High resolution phase edge lithography without the need for a trim mask |
US5537648A (en) | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
JPH08297692A (ja) | 1994-09-16 | 1996-11-12 | Mitsubishi Electric Corp | 光近接補正装置及び方法並びにパタン形成方法 |
US5496666A (en) | 1994-10-27 | 1996-03-05 | Chartered Semiconductor Manufacturing Pte Ltd. | Contact hole mask for semiconductor fabrication |
US5565286A (en) | 1994-11-17 | 1996-10-15 | International Business Machines Corporation | Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor |
KR0158904B1 (ko) | 1994-12-02 | 1999-02-01 | 김주용 | 콘택마스크 |
US5523186A (en) | 1994-12-16 | 1996-06-04 | International Business Machines Corporation | Split and cover technique for phase shifting photolithography |
US6006324A (en) * | 1995-01-25 | 1999-12-21 | Advanced Micro Devices, Inc. | High performance superscalar alignment unit |
US5532090A (en) | 1995-03-01 | 1996-07-02 | Intel Corporation | Method and apparatus for enhanced contact and via lithography |
US5682323A (en) | 1995-03-06 | 1997-10-28 | Lsi Logic Corporation | System and method for performing optical proximity correction on macrocell libraries |
JP3409493B2 (ja) | 1995-03-13 | 2003-05-26 | ソニー株式会社 | マスクパターンの補正方法および補正装置 |
KR0166497B1 (ko) * | 1995-03-24 | 1999-01-15 | 김주용 | 위상반전 마스크 및 그 제조방법 |
US5595843A (en) | 1995-03-30 | 1997-01-21 | Intel Corporation | Layout methodology, mask set, and patterning method for phase-shifting lithography |
US5553273A (en) | 1995-04-17 | 1996-09-03 | International Business Machines Corporation | Vertex minimization in a smart optical proximity correction system |
US5663893A (en) | 1995-05-03 | 1997-09-02 | Microunity Systems Engineering, Inc. | Method for generating proximity correction features for a lithographic mask pattern |
US5657235A (en) | 1995-05-03 | 1997-08-12 | International Business Machines Corporation | Continuous scale optical proximity correction by mask maker dose modulation |
JP2638561B2 (ja) | 1995-05-10 | 1997-08-06 | 株式会社日立製作所 | マスク形成方法 |
US5663017A (en) | 1995-06-07 | 1997-09-02 | Lsi Logic Corporation | Optical corrective techniques with reticle formation and reticle stitching to provide design flexibility |
JP3331822B2 (ja) | 1995-07-17 | 2002-10-07 | ソニー株式会社 | マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置 |
KR0161879B1 (ko) | 1995-09-25 | 1999-01-15 | 문정환 | 위상 반전 마스크의 구조 및 제조방법 |
JP3210560B2 (ja) | 1995-10-17 | 2001-09-17 | エスエムケイ株式会社 | タブレット |
JP2917879B2 (ja) | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | フォトマスク及びその製造方法 |
JP3934719B2 (ja) | 1995-12-22 | 2007-06-20 | 株式会社東芝 | 光近接効果補正方法 |
JP3469422B2 (ja) | 1996-02-23 | 2003-11-25 | 株式会社東芝 | 荷電ビーム描画方法及び描画装置 |
US5723233A (en) | 1996-02-27 | 1998-03-03 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
US5972541A (en) | 1996-02-27 | 1999-10-26 | Lsi Logic Corporation | Reticle and method of design to correct pattern for depth of focus problems |
US5705301A (en) | 1996-02-27 | 1998-01-06 | Lsi Logic Corporation | Performing optical proximity correction with the aid of design rule checkers |
US5862058A (en) | 1996-05-16 | 1999-01-19 | International Business Machines Corporation | Optical proximity correction method and system |
US5707765A (en) | 1996-05-28 | 1998-01-13 | Microunity Systems Engineering, Inc. | Photolithography mask using serifs and method thereof |
US5740068A (en) | 1996-05-30 | 1998-04-14 | International Business Machines Corporation | Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction |
US5885734A (en) | 1996-08-15 | 1999-03-23 | Micron Technology, Inc. | Process for modifying a hierarchical mask layout |
US5994002A (en) | 1996-09-06 | 1999-11-30 | Matsushita Electric Industrial Co., Ltd. | Photo mask and pattern forming method |
US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
US5807649A (en) | 1996-10-31 | 1998-09-15 | International Business Machines Corporation | Lithographic patterning method and mask set therefor with light field trim mask |
US5847959A (en) | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
JPH10207038A (ja) | 1997-01-28 | 1998-08-07 | Matsushita Electric Ind Co Ltd | レチクル及びパターン形成方法 |
US5821014A (en) | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
US5883813A (en) | 1997-03-04 | 1999-03-16 | International Business Machines Corporation | Automatic generation of phase shift masks using net coloring |
US5923566A (en) | 1997-03-25 | 1999-07-13 | International Business Machines Corporation | Phase shifted design verification routine |
JPH10282635A (ja) | 1997-04-09 | 1998-10-23 | Sony Corp | パターンデータ補正方法、電子線描画方法、フォトマスク及びその作製方法、露光方法、半導体装置及びその製造方法、並びにパターンデータ補正装置 |
US6057063A (en) | 1997-04-14 | 2000-05-02 | International Business Machines Corporation | Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
US6078738A (en) | 1997-05-08 | 2000-06-20 | Lsi Logic Corporation | Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization |
ES2185200T3 (es) | 1997-08-22 | 2003-04-16 | Giovanni Bisutti | Herramienta mecanica. |
US6578188B1 (en) * | 1997-09-17 | 2003-06-10 | Numerical Technologies, Inc. | Method and apparatus for a network-based mask defect printability analysis system |
US6370679B1 (en) * | 1997-09-17 | 2002-04-09 | Numerical Technologies, Inc. | Data hierarchy layout correction and verification method and apparatus |
US7107571B2 (en) * | 1997-09-17 | 2006-09-12 | Synopsys, Inc. | Visual analysis and verification system using advanced tools |
US6470489B1 (en) * | 1997-09-17 | 2002-10-22 | Numerical Technologies, Inc. | Design rule checking system and method |
US6757645B2 (en) * | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
US5958635A (en) | 1997-10-20 | 1999-09-28 | Motorola, Inc. | Lithographic proximity correction through subset feature modification |
US5935736A (en) | 1997-10-24 | 1999-08-10 | Taiwan Semiconductors Manufacturing Company Ltd. | Mask and method to eliminate side-lobe effects in attenuated phase shifting masks |
TW363147B (en) | 1997-11-22 | 1999-07-01 | United Microelectronics Corp | Phase shifting mask |
US6114071A (en) | 1997-11-24 | 2000-09-05 | Asml Masktools Netherlands B.V. | Method of fine feature edge tuning with optically-halftoned mask |
TW378281B (en) | 1997-11-28 | 2000-01-01 | United Microelectronics Corp | Phase shift mask and method for manufacturing the same |
US6081658A (en) | 1997-12-31 | 2000-06-27 | Avant! Corporation | Proximity correction system for wafer lithography |
US6077630A (en) | 1998-01-08 | 2000-06-20 | Micron Technology, Inc. | Subresolution grating for attenuated phase shifting mask fabrication |
US6083275A (en) | 1998-01-09 | 2000-07-04 | International Business Machines Corporation | Optimized phase shift design migration |
SE9800665D0 (sv) * | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
AU3063799A (en) | 1998-03-17 | 1999-10-11 | Asml Masktools Netherlands B.V. | Method of patterning sub-0.25 lambda line features with high transmission, "attenuated" phase shift masks |
US6251549B1 (en) | 1999-07-19 | 2001-06-26 | Marc David Levenson | Generic phase shift mask |
US6303253B1 (en) * | 2000-03-16 | 2001-10-16 | International Business Machines Corporation | Hierarchy and domain-balancing method and algorithm for serif mask design in microlithography |
US6416907B1 (en) * | 2000-04-27 | 2002-07-09 | Micron Technology, Inc. | Method for designing photolithographic reticle layout, reticle, and photolithographic process |
US6503666B1 (en) * | 2000-07-05 | 2003-01-07 | Numerical Technologies, Inc. | Phase shift masking for complex patterns |
US6787271B2 (en) * | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
-
2000
- 2000-12-20 US US09/746,369 patent/US6653026B2/en not_active Expired - Lifetime
-
2001
- 2001-11-30 WO PCT/US2001/047687 patent/WO2002050614A2/en active Application Filing
- 2001-11-30 EP EP10152851A patent/EP2177949B1/en not_active Expired - Lifetime
- 2001-11-30 DE DE60142078T patent/DE60142078D1/de not_active Expired - Lifetime
- 2001-11-30 AU AU2002230726A patent/AU2002230726A1/en not_active Abandoned
- 2001-11-30 CN CNB018209424A patent/CN100363838C/zh not_active Expired - Lifetime
- 2001-11-30 EP EP10152847.9A patent/EP2177948B1/en not_active Expired - Lifetime
- 2001-11-30 EP EP01990970A patent/EP1344107B1/en not_active Expired - Lifetime
- 2001-11-30 JP JP2002551649A patent/JP4329002B2/ja not_active Expired - Lifetime
-
2003
- 2003-09-09 US US10/658,933 patent/US7236916B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2002230726A1 (en) | 2002-07-01 |
EP2177949A1 (en) | 2010-04-21 |
US20040048170A1 (en) | 2004-03-11 |
CN1633626A (zh) | 2005-06-29 |
CN100363838C (zh) | 2008-01-23 |
WO2002050614A2 (en) | 2002-06-27 |
EP2177948B1 (en) | 2014-05-07 |
JP2004521376A (ja) | 2004-07-15 |
US7236916B2 (en) | 2007-06-26 |
WO2002050614B1 (en) | 2003-06-26 |
EP2177948A1 (en) | 2010-04-21 |
US20020076622A1 (en) | 2002-06-20 |
EP1344107B1 (en) | 2010-05-05 |
US6653026B2 (en) | 2003-11-25 |
EP1344107A2 (en) | 2003-09-17 |
WO2002050614A3 (en) | 2003-03-13 |
DE60142078D1 (de) | 2010-06-17 |
EP2177949B1 (en) | 2011-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4329002B2 (ja) | トリ・トーン減衰位相シフト・マスクにおける近接効果を補正するための方法 | |
US6623895B2 (en) | Hybrid phase-shift mask | |
JPH10133356A (ja) | フォトマスクおよびパターン形成方法 | |
US6787274B2 (en) | Mask for adjusting transmittance of a light and method for manufacturing the same | |
JP2006085174A (ja) | リソグラフィ装置およびデバイス製造方法 | |
KR20030027825A (ko) | 서브리졸루션 어시스트피처로서 위상에지를 이용하는광근접보정방법 | |
US6551750B2 (en) | Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks | |
JPH10123692A (ja) | フォトマスクおよびその製造方法 | |
JP2002351051A (ja) | サブ分解能アシストフューチャとしてグレーバーを使用する光近接補正方法 | |
US7005217B2 (en) | Chromeless phase shift mask | |
US6500587B1 (en) | Binary and attenuating phase-shifting masks for multiple wavelengths | |
JP2001296647A (ja) | フォトマスクおよびこれを用いた露光方法 | |
US7018788B2 (en) | Phase shifting lithographic process | |
JPH10254122A (ja) | 露光用フォトマスク | |
US6251546B1 (en) | Method of fabricating devices using an attenuated phase-shifting mask and an attenuated phase-shifting mask | |
US8736811B2 (en) | Sub-resolution assist devices and methods | |
JPH06289590A (ja) | フォトマスク及び露光方法 | |
JP3322223B2 (ja) | 位相シフトマスク | |
US6576376B1 (en) | Tri-tone mask process for dense and isolated patterns | |
JP4655532B2 (ja) | 露光用マスクの製造方法 | |
JPH07159970A (ja) | 位相シフトマスクおよび露光方法 | |
US20020136962A1 (en) | Method for improving process window in semi-dense area by using phase shifter | |
KR20090109837A (ko) | 반도체 소자의 패턴 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040616 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071211 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080310 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080317 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080410 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080603 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080902 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090227 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090416 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20090423 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090519 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090520 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090520 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090603 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4329002 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120626 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120626 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130626 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |