JP4326940B2 - 高電圧スイッチング装置 - Google Patents

高電圧スイッチング装置 Download PDF

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Publication number
JP4326940B2
JP4326940B2 JP2003506100A JP2003506100A JP4326940B2 JP 4326940 B2 JP4326940 B2 JP 4326940B2 JP 2003506100 A JP2003506100 A JP 2003506100A JP 2003506100 A JP2003506100 A JP 2003506100A JP 4326940 B2 JP4326940 B2 JP 4326940B2
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Japan
Prior art keywords
switch
load
capacitance
switching device
parallel
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Expired - Fee Related
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JP2003506100A
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English (en)
Japanese (ja)
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JP2004534452A (ja
JP2004534452A5 (enExample
Inventor
スティーブン マーク イスカンダー
ロバート リチャードソン
ポール アンドリュー グーチ
Original Assignee
イー２ヴイ テクノロジーズ （ユーケイ） リミテッド
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Publication of JP2004534452A publication Critical patent/JP2004534452A/ja
Publication of JP2004534452A5 publication Critical patent/JP2004534452A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device

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  • Generation Of Surge Voltage And Current (AREA)
  • Microwave Tubes (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2003506100A 2001-06-15 2002-06-14 高電圧スイッチング装置 Expired - Fee Related JP4326940B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0114675A GB2378065B (en) 2001-06-15 2001-06-15 High voltage switching apparatus
PCT/GB2002/002732 WO2002103904A2 (en) 2001-06-15 2002-06-14 High voltage switching apparatus

Publications (3)

Publication Number Publication Date
JP2004534452A JP2004534452A (ja) 2004-11-11
JP2004534452A5 JP2004534452A5 (enExample) 2006-01-05
JP4326940B2 true JP4326940B2 (ja) 2009-09-09

Family

ID=9916706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003506100A Expired - Fee Related JP4326940B2 (ja) 2001-06-15 2002-06-14 高電圧スイッチング装置

Country Status (6)

Country Link
US (1) US7256637B2 (enExample)
EP (1) EP1396082B1 (enExample)
JP (1) JP4326940B2 (enExample)
AU (1) AU2002345159A1 (enExample)
GB (1) GB2378065B (enExample)
WO (1) WO2002103904A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0503439D0 (en) 2005-02-18 2005-03-30 E2V Tech Uk Ltd High voltage switching apparatus
WO2006121893A2 (en) * 2005-05-06 2006-11-16 Titon Energy Power factor correction apparatus and method of producing a power factor correction capacitance for a specified load
US9008275B2 (en) 2012-05-01 2015-04-14 Analogic Corporation Voltage switching in an imaging modality that utilizes radiation to image an object
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
CN116633324A (zh) 2013-11-14 2023-08-22 鹰港科技有限公司 高压纳秒脉冲发生器
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
EP4266579A3 (en) 2017-02-07 2023-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
KR102466195B1 (ko) 2017-08-25 2022-11-11 이글 하버 테크놀로지스, 인코포레이티드 나노초 펄스를 이용한 임의의 파형 발생
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11222767B2 (en) * 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
WO2020033931A1 (en) 2018-08-10 2020-02-13 Eagle Harbor Technologies, Inc. Plasma sheath control for rf plasma reactors
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
CN109713931B (zh) * 2018-12-06 2020-05-19 西安交通大学 基于真空密闭环境的纳秒上升时间强脉冲电流发生装置
WO2020146436A1 (en) 2019-01-08 2020-07-16 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
JP7285377B2 (ja) 2019-12-24 2023-06-01 イーグル ハーバー テクノロジーズ，インク． プラズマシステム用ナノ秒パルサｒｆ絶縁
JP7439302B2 (ja) 2020-05-12 2024-02-27 イーグル ハーバー テクノロジーズ，インク． 高周波ｒｆ発生器及びｄｃパルシング
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
WO2024073582A2 (en) 2022-09-29 2024-04-04 Eagle Harbor Technologies, Inc. High voltage plasma control

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US3678362A (en) * 1970-09-17 1972-07-18 Us Army Solid state pulser using parallel storage capacitors
WO1981001924A1 (fr) * 1979-12-28 1981-07-09 Int Rectifier Corp Jp Ltd Configuration de circuit de transistor a effet de champ
US4720668A (en) * 1986-06-20 1988-01-19 Lee Fred C Zero-voltage switching quasi-resonant converters
KR0115015Y1 (ko) * 1991-09-19 1998-10-01 이헌조 스위칭소자 구동회로
US5395394A (en) * 1993-06-17 1995-03-07 Hewlett-Packard Corporation Defibrillator with a high voltage solid state relay
US5568035A (en) * 1993-10-15 1996-10-22 Sony/Tektronix Corporation Variable-capacitance power supply apparatus
US5723913A (en) * 1994-12-06 1998-03-03 Performance Controls, Inc. High-voltage electronic switching circuit
JPH0993908A (ja) * 1995-09-22 1997-04-04 Denshi Seigyo Group:Kk 半導体スイッチ駆動回路
US5930125A (en) * 1996-08-28 1999-07-27 Siemens Medical Systems, Inc. Compact solid state klystron power supply
AU7164696A (en) * 1996-09-23 1998-04-14 Eldec Corporation Solid-state high voltage switch and switching power supply
US6327163B1 (en) * 1999-04-27 2001-12-04 Science Research Laboratory, Inc. Solid state pulsed power supply
GB2356752B (en) * 1999-11-29 2004-08-11 Eev Ltd Switching arrangements
JP2001238470A (ja) * 2000-02-21 2001-08-31 Ngk Insulators Ltd パルス電力発生用スイッチ回路
US6552598B2 (en) * 2001-07-20 2003-04-22 Vitaly Gelman Semiconductor high voltage electrical energy transmission switching system and method

Also Published As

Publication number Publication date
JP2004534452A (ja) 2004-11-11
GB2378065A (en) 2003-01-29
WO2002103904A2 (en) 2002-12-27
EP1396082B1 (en) 2019-05-01
US20040183506A1 (en) 2004-09-23
AU2002345159A1 (en) 2003-01-02
EP1396082A2 (en) 2004-03-10
GB2378065B (en) 2004-09-15
GB0114675D0 (en) 2001-08-08
WO2002103904A3 (en) 2003-03-13
US7256637B2 (en) 2007-08-14

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