JP4326940B2 - 高電圧スイッチング装置 - Google Patents

高電圧スイッチング装置 Download PDF

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Publication number
JP4326940B2
JP4326940B2 JP2003506100A JP2003506100A JP4326940B2 JP 4326940 B2 JP4326940 B2 JP 4326940B2 JP 2003506100 A JP2003506100 A JP 2003506100A JP 2003506100 A JP2003506100 A JP 2003506100A JP 4326940 B2 JP4326940 B2 JP 4326940B2
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Japan
Prior art keywords
switch
load
capacitance
switching device
parallel
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JP2003506100A
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English (en)
Japanese (ja)
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JP2004534452A (ja
JP2004534452A5 (enExample
Inventor
スティーブン マーク イスカンダー
ロバート リチャードソン
ポール アンドリュー グーチ
Original Assignee
イー２ヴイ テクノロジーズ （ユーケイ） リミテッド
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Publication of JP2004534452A publication Critical patent/JP2004534452A/ja
Publication of JP2004534452A5 publication Critical patent/JP2004534452A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device

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  • Generation Of Surge Voltage And Current (AREA)
  • Electronic Switches (AREA)
  • Microwave Tubes (AREA)
  • Power Conversion In General (AREA)
JP2003506100A 2001-06-15 2002-06-14 高電圧スイッチング装置 Expired - Fee Related JP4326940B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0114675A GB2378065B (en) 2001-06-15 2001-06-15 High voltage switching apparatus
PCT/GB2002/002732 WO2002103904A2 (en) 2001-06-15 2002-06-14 High voltage switching apparatus

Publications (3)

Publication Number Publication Date
JP2004534452A JP2004534452A (ja) 2004-11-11
JP2004534452A5 JP2004534452A5 (enExample) 2006-01-05
JP4326940B2 true JP4326940B2 (ja) 2009-09-09

Family

ID=9916706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003506100A Expired - Fee Related JP4326940B2 (ja) 2001-06-15 2002-06-14 高電圧スイッチング装置

Country Status (6)

Country Link
US (1) US7256637B2 (enExample)
EP (1) EP1396082B1 (enExample)
JP (1) JP4326940B2 (enExample)
AU (1) AU2002345159A1 (enExample)
GB (1) GB2378065B (enExample)
WO (1) WO2002103904A2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0503439D0 (en) * 2005-02-18 2005-03-30 E2V Tech Uk Ltd High voltage switching apparatus
US20060250117A1 (en) * 2005-05-06 2006-11-09 Titon Energy Power Factor Correction Analysis System and Method
US9008275B2 (en) 2012-05-01 2015-04-14 Analogic Corporation Voltage switching in an imaging modality that utilizes radiation to image an object
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
CN116633324A (zh) 2013-11-14 2023-08-22 鹰港科技有限公司 高压纳秒脉冲发生器
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
EP3580841A4 (en) 2017-02-07 2020-12-16 Eagle Harbor Technologies, Inc. TRANSFORMER-RESONANCE CONVERTER
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11222767B2 (en) * 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
KR102499709B1 (ko) 2018-08-10 2023-02-16 이글 하버 테크놀로지스, 인코포레이티드 RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어
WO2021134000A1 (en) 2019-12-24 2021-07-01 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation for plasma systems
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
CN109713931B (zh) * 2018-12-06 2020-05-19 西安交通大学 基于真空密闭环境的纳秒上升时间强脉冲电流发生装置
US10796887B2 (en) 2019-01-08 2020-10-06 Eagle Harbor Technologies, Inc. Efficient nanosecond pulser with source and sink capability for plasma control applications
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
KR20250084155A (ko) 2022-09-29 2025-06-10 이글 하버 테크놀로지스, 인코포레이티드 고전압 플라즈마 제어

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Publication number Priority date Publication date Assignee Title
US3678362A (en) * 1970-09-17 1972-07-18 Us Army Solid state pulser using parallel storage capacitors
DE2967520D1 (en) * 1979-12-28 1985-10-31 Int Rectifier Corp Field effect transistor circuit configuration
US4720668A (en) * 1986-06-20 1988-01-19 Lee Fred C Zero-voltage switching quasi-resonant converters
KR0115015Y1 (ko) * 1991-09-19 1998-10-01 이헌조 스위칭소자 구동회로
US5395394A (en) * 1993-06-17 1995-03-07 Hewlett-Packard Corporation Defibrillator with a high voltage solid state relay
US5568035A (en) * 1993-10-15 1996-10-22 Sony/Tektronix Corporation Variable-capacitance power supply apparatus
US5723913A (en) * 1994-12-06 1998-03-03 Performance Controls, Inc. High-voltage electronic switching circuit
JPH0993908A (ja) * 1995-09-22 1997-04-04 Denshi Seigyo Group:Kk 半導体スイッチ駆動回路
US5930125A (en) * 1996-08-28 1999-07-27 Siemens Medical Systems, Inc. Compact solid state klystron power supply
WO1998012817A1 (en) * 1996-09-23 1998-03-26 Eldec Corporation Solid-state high voltage switch and switching power supply
US6327163B1 (en) * 1999-04-27 2001-12-04 Science Research Laboratory, Inc. Solid state pulsed power supply
GB2356752B (en) * 1999-11-29 2004-08-11 Eev Ltd Switching arrangements
JP2001238470A (ja) * 2000-02-21 2001-08-31 Ngk Insulators Ltd パルス電力発生用スイッチ回路
US6552598B2 (en) * 2001-07-20 2003-04-22 Vitaly Gelman Semiconductor high voltage electrical energy transmission switching system and method

Also Published As

Publication number Publication date
EP1396082A2 (en) 2004-03-10
EP1396082B1 (en) 2019-05-01
AU2002345159A1 (en) 2003-01-02
GB2378065A (en) 2003-01-29
GB2378065B (en) 2004-09-15
JP2004534452A (ja) 2004-11-11
WO2002103904A3 (en) 2003-03-13
WO2002103904A2 (en) 2002-12-27
GB0114675D0 (en) 2001-08-08
US20040183506A1 (en) 2004-09-23
US7256637B2 (en) 2007-08-14

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