JP4314887B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP4314887B2
JP4314887B2 JP2003148359A JP2003148359A JP4314887B2 JP 4314887 B2 JP4314887 B2 JP 4314887B2 JP 2003148359 A JP2003148359 A JP 2003148359A JP 2003148359 A JP2003148359 A JP 2003148359A JP 4314887 B2 JP4314887 B2 JP 4314887B2
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Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
crystal defects
grown
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Expired - Lifetime
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JP2003148359A
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English (en)
Japanese (ja)
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JP2004006886A (ja
JP2004006886A5 (https=
Inventor
裕之 清久
修二 中村
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Nichia Corp
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Nichia Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=30445545&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4314887(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003148359A priority Critical patent/JP4314887B2/ja
Publication of JP2004006886A publication Critical patent/JP2004006886A/ja
Publication of JP2004006886A5 publication Critical patent/JP2004006886A5/ja
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JP2003148359A 1997-11-26 2003-05-26 窒化物半導体素子 Expired - Lifetime JP4314887B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003148359A JP4314887B2 (ja) 1997-11-26 2003-05-26 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32499797 1997-11-26
JP2003148359A JP4314887B2 (ja) 1997-11-26 2003-05-26 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13283198A Division JP3456413B2 (ja) 1997-11-26 1998-05-15 窒化物半導体の成長方法及び窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2004006886A JP2004006886A (ja) 2004-01-08
JP2004006886A5 JP2004006886A5 (https=) 2005-09-22
JP4314887B2 true JP4314887B2 (ja) 2009-08-19

Family

ID=30445545

Family Applications (1)

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JP2003148359A Expired - Lifetime JP4314887B2 (ja) 1997-11-26 2003-05-26 窒化物半導体素子

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100533794C (zh) * 2003-02-07 2009-08-26 三洋电机株式会社 半导体元件
CN117401997B (zh) * 2023-11-01 2024-09-20 郑州宏拓精密工具有限公司 一种光伏籽晶掏刀及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3974667B2 (ja) * 1994-08-22 2007-09-12 ローム株式会社 半導体発光素子の製法
JP2828002B2 (ja) * 1995-01-19 1998-11-25 松下電器産業株式会社 半導体発光素子およびその製造方法
DE69622277T2 (de) * 1995-09-18 2003-03-27 Hitachi, Ltd. Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung
JP3350855B2 (ja) * 1995-10-16 2002-11-25 日本電信電話株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JPH1143398A (ja) * 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
JP3925753B2 (ja) * 1997-10-24 2007-06-06 ソニー株式会社 半導体素子およびその製造方法ならびに半導体発光素子
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子

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JP2004006886A (ja) 2004-01-08

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